SU654917A1 - Device for measuring p-n junction breakthrough voltage - Google Patents
Device for measuring p-n junction breakthrough voltageInfo
- Publication number
- SU654917A1 SU654917A1 SU772529149A SU2529149A SU654917A1 SU 654917 A1 SU654917 A1 SU 654917A1 SU 772529149 A SU772529149 A SU 772529149A SU 2529149 A SU2529149 A SU 2529149A SU 654917 A1 SU654917 A1 SU 654917A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- voltage
- junction
- measuring
- breakthrough voltage
- breakdown
- Prior art date
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Description
известному ф времени закону амплитудой ймrifльifca, конденсатора 2, иснытуемого иолупроводникового прибора 3, измерител 4 Нар жени и выходных клемм 5 и 6 дл подключени испытуемого прибора.known for the time law of the amplitude of the rimp, condenser 2, the inventive i-device 3, the meter 4 Outfit and output terminals 5 and 6 for connecting the device under test.
Устройство работает следующим образом.The device works as follows.
Импульсы напр жени от генератора 1 через конденсатор 2 поступают на полупроводниковый прибор 3. Измерение и KOFITроль напр жени на приборе 3 (или тока через него) производитс на измерителе 4 напр жени . Амплитзда импульсов генератора постепенно повышаетс до настуилени пробо испытуемого издели .The voltage pulses from the generator 1 through the capacitor 2 are fed to the semiconductor device 3. The voltage and the KOFIT voltage on the device 3 (or current through it) are measured on the voltage meter 4. The amplitude of the generator pulses is gradually increased until the sample of the test product is set.
При пробое сопротивление полупроводникового прибора резко падает, столь же резко падает и посто нна времени зар да конденсатора 2. Это приводит к укорочению воздействующего импульса и снижению напр жени на приборе 3 или до величины, при которой пробой срываетс .During breakdown, the resistance of a semiconductor device drops sharply, and the charging time of capacitor 2 drops just as sharply. This leads to a shortening of the acting pulse and a decrease in voltage on the device 3 or to the value at which the breakdown fails.
Врем , в течение которого испытуемый прибор работает в режиме пробо , зависит от посто нной времени зар да конденсатора 2 при пробое и может быть существенно меньще, чем у аналогичных устройств, использующих схемы сброса испытательного напр жени .The time during which the device under test operates in the breakdown mode depends on the constant charging time of capacitor 2 during breakdown and can be substantially less than that of similar devices using test voltage reset circuits.
Величина емкости выбираетс Capacity value is selected
10-т„10 t
СWITH
-С„-WITH"
R,:R:
-длительность импульса на выгде т„ходе генератора; Rg; С, - соответственно сопротивление и емкость испытуемого полупроводникового прибора при напр жении, меньщем пробивного .-the impulse duration at the output of the generator; Rg; C, is the resistance and capacitance of the tested semiconductor device, respectively, at a voltage lower than the breakdown voltage.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU772529149A SU654917A1 (en) | 1977-10-05 | 1977-10-05 | Device for measuring p-n junction breakthrough voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU772529149A SU654917A1 (en) | 1977-10-05 | 1977-10-05 | Device for measuring p-n junction breakthrough voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU654917A1 true SU654917A1 (en) | 1979-03-30 |
Family
ID=20726907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU772529149A SU654917A1 (en) | 1977-10-05 | 1977-10-05 | Device for measuring p-n junction breakthrough voltage |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU654917A1 (en) |
-
1977
- 1977-10-05 SU SU772529149A patent/SU654917A1/en active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SU654917A1 (en) | Device for measuring p-n junction breakthrough voltage | |
| US2839725A (en) | Pulse rate measuring system | |
| JPS5437582A (en) | Measuring method for capacity of three-terminal semiconductor element | |
| SU945805A1 (en) | Three-element passive two-terminal network parameters bridge meter | |
| SU402984A1 (en) | DEVICE FOR FIXING ELECTRIC VALUES | |
| JPS5440082A (en) | Semiconductor test device | |
| RU94028416A (en) | Method for determination of complex resistance of two-pole in given bandwidth | |
| SU136792A1 (en) | Device for measuring pulse duration | |
| SU635438A1 (en) | Capacitive measuring arrangement | |
| SU421959A1 (en) | METHOD OF MEASURING PUNCHING VOLTAGE;? - p-TRANSITIONS OF SEMICONDUCTOR INSTRUMENTS WITH AIRBALL MECHANISM OF BREAKTHROUGH | |
| SU391503A1 (en) | DEVICE FOR MEASURING HEAT | |
| SU1506404A1 (en) | Method of determining the exponent of voltamperic characteristic of detector | |
| SU473131A1 (en) | Device for measuring and monitoring the maximum allowable current of semiconductor devices in the avalanche mode | |
| SU684733A1 (en) | Converter of capacitor capacitance value into time-related voltage interval | |
| JPS5769237A (en) | Temperature and humidity sensing device | |
| SU394719A1 (en) | AMPLITUDE VOLTMETER | |
| SU648917A1 (en) | Passive two-pole network parameter meter | |
| SU951198A1 (en) | Method of measuring lifespan of minority carrier in semiconductor p-n junctions | |
| SU464870A1 (en) | Time-to-pulse converter device | |
| US5057780A (en) | Method and apparatus for measuring trigger and latchback voltage of a semiconductor device | |
| JPS531570A (en) | Measuring system | |
| SU673939A1 (en) | Arrangement for measuring back currents of semiconductor devices | |
| SU134337A1 (en) | Device for measuring the phase angle between two alternating voltages | |
| SU645098A1 (en) | Capacitance measuring method | |
| US2931980A (en) | Test set to measure dynamic properties of diodes |