SU536588A1 - Semiconductor generator - Google Patents
Semiconductor generatorInfo
- Publication number
- SU536588A1 SU536588A1 SU2091641A SU2091641A SU536588A1 SU 536588 A1 SU536588 A1 SU 536588A1 SU 2091641 A SU2091641 A SU 2091641A SU 2091641 A SU2091641 A SU 2091641A SU 536588 A1 SU536588 A1 SU 536588A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- semiconductor generator
- generator
- semiconductor
- resonator
- instability
- Prior art date
Links
Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
це IB затухани х объемного резолатора 2 и параллельного контура нестабильность генерируемых частот ,близка .к нестабильности параллельного контура € кварцевым резонатором 6, имеющего меньшее затухание.At IB, the attenuation of the volume resolver 2 and the parallel contour of the instability of the generated frequencies is close to the instability of the parallel contour of the quartz resonator 6, which has a lower attenuation.
Формула Изобретени Formula of Invention
Полупроводниковый генератор, содержащий диод с отрицательным соцроти1влением, установленный в св занном с нагрузкой объемном резонаторе и подключенный к параллельному контуру, резонансна частота которого кратна рабочей частоте генератора, отличающийс тем, что, с целью уменьщени медленных флуктуации частоты, в емкостную ветвь параллельного контура включен кварцевый резонатор.A semiconductor oscillator containing a diode with a negative sotstroeniem installed in a load-spaceted cavity resonator and connected to a parallel circuit whose resonant frequency is a multiple of the operating frequency of the generator, characterized in that, in order to reduce slow frequency fluctuations, a quartz crystal is included in the capacitive branch of the parallel circuit resonator.
Источники информации, прин тые во внимание при экспертизе:Sources of information taken into account in the examination:
1.Авторское свидетельст1Во СССР № 307484, М. Кл.2 Н ОЗВ 7/06, за вл. 27.12.68.1. Authors certificate USSR No. 307484, M. Kl.2 N OZV 7/06, Zl. 12/27/68.
2.Патент США № 3510800, класс 331--36, опубл. 05.05.71 (прототип).2. US patent number 3510800, class 331--36, publ. 05.05.71 (prototype).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU2091641A SU536588A1 (en) | 1974-12-31 | 1974-12-31 | Semiconductor generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU2091641A SU536588A1 (en) | 1974-12-31 | 1974-12-31 | Semiconductor generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU536588A1 true SU536588A1 (en) | 1976-11-25 |
Family
ID=20605913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU2091641A SU536588A1 (en) | 1974-12-31 | 1974-12-31 | Semiconductor generator |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU536588A1 (en) |
-
1974
- 1974-12-31 SU SU2091641A patent/SU536588A1/en active
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