SU536588A1 - Semiconductor generator - Google Patents

Semiconductor generator

Info

Publication number
SU536588A1
SU536588A1 SU2091641A SU2091641A SU536588A1 SU 536588 A1 SU536588 A1 SU 536588A1 SU 2091641 A SU2091641 A SU 2091641A SU 2091641 A SU2091641 A SU 2091641A SU 536588 A1 SU536588 A1 SU 536588A1
Authority
SU
USSR - Soviet Union
Prior art keywords
semiconductor generator
generator
semiconductor
resonator
instability
Prior art date
Application number
SU2091641A
Other languages
Russian (ru)
Inventor
Александр Алексеевич Зеленский
Федор Федорович Колпаков
Григорий Александрович Кутя
Евгений Алексеевич Милькевич
Юрий Сергеевич Силаев
Виктор Федорович Солодовник
Виктор Григорьевич Удачин
Original Assignee
Харьковский авиационный институт
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Харьковский авиационный институт filed Critical Харьковский авиационный институт
Priority to SU2091641A priority Critical patent/SU536588A1/en
Application granted granted Critical
Publication of SU536588A1 publication Critical patent/SU536588A1/en

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Landscapes

  • Oxygen, Ozone, And Oxides In General (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Description

це IB затухани х объемного резолатора 2 и параллельного контура нестабильность генерируемых частот ,близка .к нестабильности параллельного контура € кварцевым резонатором 6, имеющего меньшее затухание.At IB, the attenuation of the volume resolver 2 and the parallel contour of the instability of the generated frequencies is close to the instability of the parallel contour of the quartz resonator 6, which has a lower attenuation.

Формула Изобретени Formula of Invention

Полупроводниковый генератор, содержащий диод с отрицательным соцроти1влением, установленный в св занном с нагрузкой объемном резонаторе и подключенный к параллельному контуру, резонансна  частота которого кратна рабочей частоте генератора, отличающийс  тем, что, с целью уменьщени  медленных флуктуации частоты, в емкостную ветвь параллельного контура включен кварцевый резонатор.A semiconductor oscillator containing a diode with a negative sotstroeniem installed in a load-spaceted cavity resonator and connected to a parallel circuit whose resonant frequency is a multiple of the operating frequency of the generator, characterized in that, in order to reduce slow frequency fluctuations, a quartz crystal is included in the capacitive branch of the parallel circuit resonator.

Источники информации, прин тые во внимание при экспертизе:Sources of information taken into account in the examination:

1.Авторское свидетельст1Во СССР № 307484, М. Кл.2 Н ОЗВ 7/06, за вл. 27.12.68.1. Authors certificate USSR No. 307484, M. Kl.2 N OZV 7/06, Zl. 12/27/68.

2.Патент США № 3510800, класс 331--36, опубл. 05.05.71 (прототип).2. US patent number 3510800, class 331--36, publ. 05.05.71 (prototype).

SU2091641A 1974-12-31 1974-12-31 Semiconductor generator SU536588A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU2091641A SU536588A1 (en) 1974-12-31 1974-12-31 Semiconductor generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU2091641A SU536588A1 (en) 1974-12-31 1974-12-31 Semiconductor generator

Publications (1)

Publication Number Publication Date
SU536588A1 true SU536588A1 (en) 1976-11-25

Family

ID=20605913

Family Applications (1)

Application Number Title Priority Date Filing Date
SU2091641A SU536588A1 (en) 1974-12-31 1974-12-31 Semiconductor generator

Country Status (1)

Country Link
SU (1) SU536588A1 (en)

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