SU491059A1 - Microelectronic pressure transmitter - Google Patents

Microelectronic pressure transmitter

Info

Publication number
SU491059A1
SU491059A1 SU1945305A SU1945305A SU491059A1 SU 491059 A1 SU491059 A1 SU 491059A1 SU 1945305 A SU1945305 A SU 1945305A SU 1945305 A SU1945305 A SU 1945305A SU 491059 A1 SU491059 A1 SU 491059A1
Authority
SU
USSR - Soviet Union
Prior art keywords
pressure transmitter
microelectronic pressure
microelectronic
strain
strain gauges
Prior art date
Application number
SU1945305A
Other languages
Russian (ru)
Inventor
Владимир Иванович Ваганов
Original Assignee
Московский Ордена Трудового Красного Знамени Инженерно-Физический Институт
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Московский Ордена Трудового Красного Знамени Инженерно-Физический Институт filed Critical Московский Ордена Трудового Красного Знамени Инженерно-Физический Институт
Priority to SU1945305A priority Critical patent/SU491059A1/en
Application granted granted Critical
Publication of SU491059A1 publication Critical patent/SU491059A1/en

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Description

(54) МИКРОЭЛЕКТРОННЫЙ ПРЕОБРАЗОВАТЕЛЬ ДАВЛЕНИЯ(54) MICROELECTRONIC PRESSURE CONVERTER

кового материала, например кремни , с изготовленными в ней тензорезисторами, отличающийс  тем, что, с целью увеличени  чувствительности, уменьшени  геометрических размеров и улучшени  температурной стабильности преобразовател , он снабжен изготовленными в мембране тензотранзисторами, коллекторные области которых соединены токоведушими дорожками с тензорезисторами одинакового с ними знака тензочувствительности , а базовые области - с тензорезисторами противоположного знака.For example, silicon, with strain gauges made in it, characterized in that, in order to increase sensitivity, reduce geometrical dimensions and improve temperature stability of the converter, it is equipped with strain transistors manufactured in the membrane, the collector areas of which are connected by conductor paths with strain gauges of the same sign with them strain gages, and base areas - with strain gauges of opposite sign.

10 (Бых.од)10 (Byh.od)

SU1945305A 1973-07-10 1973-07-10 Microelectronic pressure transmitter SU491059A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU1945305A SU491059A1 (en) 1973-07-10 1973-07-10 Microelectronic pressure transmitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1945305A SU491059A1 (en) 1973-07-10 1973-07-10 Microelectronic pressure transmitter

Publications (1)

Publication Number Publication Date
SU491059A1 true SU491059A1 (en) 1975-11-05

Family

ID=20560368

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1945305A SU491059A1 (en) 1973-07-10 1973-07-10 Microelectronic pressure transmitter

Country Status (1)

Country Link
SU (1) SU491059A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105742371A (en) * 2014-12-26 2016-07-06 长野计器株式会社 Sensor Module And Method For Producing Sensor Module
RU174159U1 (en) * 2017-04-12 2017-10-06 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") Integral sensor element of a pressure transducer based on a bipolar transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105742371A (en) * 2014-12-26 2016-07-06 长野计器株式会社 Sensor Module And Method For Producing Sensor Module
CN105742371B (en) * 2014-12-26 2021-05-25 长野计器株式会社 Sensor module and method for manufacturing sensor module
RU174159U1 (en) * 2017-04-12 2017-10-06 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") Integral sensor element of a pressure transducer based on a bipolar transistor

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