SU415117A1

SU415117A1 - Solder for soldering silicon

Info

Publication number: SU415117A1
Application number: SU1800041A
Authority: SU
Original assignee: О. П. Ксенофонгов
Priority date: 1972-06-23
Filing date: 1972-06-23
Publication date: 1974-02-15

Description

1one

Изобретение относитс к области пайки, в частности к составу припо дл пайки кремни .The invention relates to the field of soldering, in particular to the composition of silicon solder.

Известен припой дл найки кремни на основе серебра, содержащий 0,93-1,25% меди и 0,7-0,94% никел .Known solder for nike silicon-based silver containing 0.93-1.25% copper and 0.7-0.94% nickel.

Дл повышени качества па ного соединени и снижени температуры пайки, в состав припо введен германий в количестве 0,1-5,0%, а остальные компоненты вз ты в следующем соотношеннн, %:To improve the quality of the solder joint and lower the brazing temperature, germanium was added to the solder in an amount of 0.1–5.0%, and the remaining components were taken in the following ratio,%:

никель0,1-2,0nickel 0.1-2.0

медь10,0-40,0copper 10,0-40,0

сереброостальное.silver ostal

Дл придани припою акцепторных или донорских свойств, в его состав может быть введен бор, галлнй или сурьма в количестве 0,1-3,0%.To give solder acceptor or donor properties, boron, gallium or antimony can be added to it in an amount of 0.1–3.0%.

Предлагаемый серебр но-медный припой способствует образованию контакта с кремнием (в вакууме 10 мм рт. ст., водороде или инертной атмосфере) при 600-750°С. В случае соединени с вольфрамовой опорной пластиной достаточна толщина ирипо 30-40 мкм (независимо от толщины пластинки кремни ). Припой может быть иснользован и дл металлизации кремни путем вакуумного напылени и последующего вплавлени напыленного сло .The proposed silver-copper solder promotes the formation of contact with silicon (in a vacuum of 10 mmHg, hydrogen or an inert atmosphere) at 600–750 ° C. In the case of a joint with a tungsten base plate, a thickness of 30–40 microns is sufficient (regardless of the thickness of the silicon wafer). Solder can also be used to metallize silicon by vacuum sputtering and subsequent melting of the sprayed layer.

Примеры исполнени припоев (%):Solder execution examples (%):

Claims

1. Si 0.5, germanium 2.5, antimony 1.0, copper 2 / .O, silver 69.0; compound formation temperature 650 ° C;

2. nickel 0.9, germanium 0.1, antimony 1.0, copper 28.0, silver 70.0; compound formation temperature 700 ° C;

3.Nickel 1.0, germanium 4.5, copper 29.5, silver 65.0; compound formation temperature 600 ° C;

4.Nickel 0.2, germanium 0.8, copper 15.0, silver 84.0, compound formation temperature 750 ° C;

5.Nice 0.5, Germann 2.5, Gallium 1.0, Copper 27.0, the formation temperature of the compound is 700 ° C.

If silicon combines with a tungsten base plate, a holding time of 20-30 minutes and a temperature rise of 50 ° C is required.

The structure of the solder compound of silicon with tungsten in the above-mentioned solders (except for number 3) is uniform, with no gaps on the surface of the compound. This is a triangle due to the fact that the melting temperature of the marked solders is higher than the temperature of the tsrina-silicon eutectic. Solder, remaining solid, forms a compound with silicon at the points of contact.

Subject invention

1. A solder pan for silicon, containing copper, copper, silver, characterized in that, in order to improve the quality of the solder joint and lower the solder temperature, germanium was introduced into its composition, and the components were taken in the following ratio, wt. % .B nickel 0.1-2.0 copper 10.0-40.0 4 germanium 0.1-5-, 0 silver the rest, 2. Weld according to claim I, characterized in that, in order to impart solder to the solder or donor: properties, in it, the stock can be entered by eggement selected for pear boron, gallium, antimony in the amount of OD-3.0%.