SU1760480A1 - Method of manufacturing semiconducting primary hall converters - Google Patents

Abstract

Usage: in microelectronics, more precisely, in the technology of manufacturing semiconductor magnetic field transducers - Hall converters. The purpose of the invention is to reduce the labor intensity. The essence of the invention is that the structures of semiconductor Hall impregnators are made on a plate oriented in the direction 110 before dividing the plate into discrete Hall converters on one arbitrarily chosen converter (test sample), the arm is determined with minimum resistance followed by simultaneous local ion irradiation similar to arm of all sensors on the plate to achieve the minimum value of the residual voltage, which is monitored dissolved in the test sample. 1 h. the item of f-ly, 3 silt (L with

Description

The invention relates to microelectronics, and more specifically to the technology of manufacturing semiconductor magnetic field transducers - Hall converters (HR).

The known method of manufacturing semiconductor HRPs (the technological route of which does not contain the operation of reducing the residual voltage of the converters), in which obtaining the HRP with a given level of residual voltage can be achieved by individually defining the converters according to this parameter 1.

The disadvantages of this method are the increased complexity due to the need to perform individual scrapping of the HR structures by the magnitude of the residual voltage and extremely

low yield in the manufacture of HRPs with reduced residual voltage.

The closest technical solution to the invention is a method of manufacturing Hall sensors (including traditional manufacturing processes for manufacturing Hall semiconductor sensors), in which the reduction (fitting) of the residual voltage is carried out by changing the geometry of the sensor working medium by locally burning the semiconductor material Hall contacts focused beam of an optical quantum generator 2.

The disadvantage of this method is its practical unsuitability (high cost, low workability) in the manufacture of semiconductor primary HRPs using the group technology method.

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The aim of the invention is to improve the processability in the manufacture of semiconductor primary HRPs using the group technology method.

The goal is achieved by the method, which includes the formation of semiconductor primary HRPs on a plate, the definition of a converter arm with minimal resistance, reduction of residual voltage, separation of the plate into discrete elements, HRP is formed on the plate oriented in the direction 110.

In addition, prior to dividing the plate into crystals on one randomly selected HRP (test sample), a shoulder with minimum resistance is determined followed by local ion irradiation of the same shoulder at the same time all the HRPs on the plate until the minimum value of the residual voltage is reached, which is controlled on the test sample .

The processing locality is achieved by creating a photoresist mask on the surface of the HRP.

The magnitude of the residual voltage of semiconductor HRPs is determined by several components, one of which is uncontrolled subtraction of the side surface of the converters during the formation of the topology of the working fluid by chemical etching. Moreover, the magnitude of this subtrav of the formed structures of HRP has a significant variation over the area of the semiconductor wafer. It was established experimentally that the fabrication of HRPs oriented in direction 110 eliminates this variation, which, in turn, makes it possible to apply group (simultaneously for all PCHs on the plate) adjustment of one of the residual voltage component (in particular, by ion beam method). processing).

Comparative analysis with the prototype and other known technical solutions shows that the proposed technical solution meets the criteria of novelty and significant differences.

FIG. Figure 1 shows the formed structure of the HRP, where 1 is a semi-insulating substrate, 2 is an epitaxial layer (the working body of the transducer is 3 contact pads.

FIG. 2 shows the scheme of the operation of implantation of protons, where 4 is the photoresist mask, 5 is the proton propagation flux H.

FIG. 3 depicts the structure of the HRP after proton implantation and photoresist removal, where 6 is the locally proton-treated surface area of HRP,

The proposed method for manufacturing semiconductor HRCs is implemented as follows.

On a plate with epitaxial film

HRPs are formed with a predetermined topology of the working fluid and contact pads (Fig. 1) by the method of photolithography and vacuum sputtering according to standard group technology. HRPs are oriented in

direction 110 relative to the base slice of the plate. (The axis passing through the PC current contacts is oriented on the plate parallel to the crystallographic direction 110).

With the help of the probe installation, the probe A-5 and the measuring device of the CUIP on one of the transducer-shaped (test) formed on the plate determine and mark the area of the working fluid with

minimum resistance value. A photoresist mask is formed on the Plate, which leaves on all converters only the necessary part of the working body surface (similar to

labeled test transducer section). On the ion beam installation Vesuvius-5, protons are implanted.

Active control of the residual voltage is carried out on a test transducer by a probe device installed in the Vesuvius-5 installation chamber with information output to the CMDI.

The control of the residual voltage is carried out continuously.

The proton implantation process is stopped when the minimum value of residual voltage is reached.

The photoresist is removed in a plasma chemical cleaning unit 08 PHO-1 OOT (Fig. 3). The plate is divided into discrete HRP crystals.

An epitaxial structure of gallium arsenide with an epitaxial layer thickness of 0.3 μm and an electron concentration of 5 -1017 was used as the starting material. The thickness of the mask photoresist FP-383 - 1 micron. The proton implantation energy is 50 keV.

As a result, 400 pieces were obtained on a plate in a single process (group method). HRP crystals with a residual voltage of 0.05 mV.

The yield on the plate was 86%.

The yield in the case when the orientation of HRP in the direction 110 on the plate was not carried out, amounted to 5%.

The implementation of the proposed technical solution in comparison with the known methods provides the following technical and economic advantages. Three and more times (depending on the size of the HRP crystals), the labor intensity and cost of their manufacture is reduced due to the replacement of the individual adjustment of the residual voltage to the group voltage.

The working conditions are improved due to the elimination of the tedious and time-consuming individual adjustment operation that requires the operator to work hard with a microscope.

Claims (2)

1. A method of manufacturing semiconductor Hall transducers, consisting in that Hall plates are manufactured, a semiconductor primary transducer arm is defined with minimal resistance, the residual voltage is reduced, the plate is divided into discrete semiconductor Primary Hall Transducers, characterized in that In order to improve the manufacturability, the axis of the converter passing through the current contacts is oriented on the plate in the direction 110. 2. Method pop. 1, characterized in that the reduction of the residual voltage is carried out by local ion irradiation of the arms with minimal resistance of all semiconductor primary transducers located on the plate. Schig.1 H III I I I I G