SU1644016A1 - Electrochemical cell for producing copper-containing semiconductor of preset composition - Google Patents
Electrochemical cell for producing copper-containing semiconductor of preset composition Download PDFInfo
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- SU1644016A1 SU1644016A1 SU884424142A SU4424142A SU1644016A1 SU 1644016 A1 SU1644016 A1 SU 1644016A1 SU 884424142 A SU884424142 A SU 884424142A SU 4424142 A SU4424142 A SU 4424142A SU 1644016 A1 SU1644016 A1 SU 1644016A1
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- SU
- USSR - Soviet Union
- Prior art keywords
- copper
- containing semiconductor
- electrochemical cell
- cucl
- producing copper
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- Electrolytic Production Of Metals (AREA)
Description
1one
(21)4424142/25(21) 4424142/25
(22)18.02.88(22) 02.18.88
(46) 23.04.91 . Бюл. К 15(46) 04.23.91. Bul K 15
(71)Кировский политехнический институт(71) Kirov Polytechnic Institute
(72)А.П. Леушина, Н.Н. Воробьева и О.В. Суворова (72) A.P. Leushina, N.N. Vorobyova and O.V. Suvorov
(53) 543.258(088.8)(53) 543.258 (088.8)
(56) Вершинин Ч,Но, Малов Ю.И.(56) Vershinin Ch, No, Malov Yu.I.
и Укше Е.А. Быстрый перенос ИОНОРand Ukshe EA Fast transfer IONOR
меди в твердых растворах CuBr-Cu S, Электрохими , 1986, т.22, вьп. 4copper in solid solutions CuBr-Cu S, Electrochemistry, 1986, v.22, vp. four
с. 568.with. 568.
Kobayashi H. и Wagnev С. Investigation on the Reduction of silver Sulfide and Сцрrents Salfide by Hydrogen . - J. Chen. Phys. 1957, v. 26, № 6, p. 160°.Kobayashi H. and Wagnev C. Investigation of the Silver Sulfide and Sculpting Salfide by Hydrogen. - J. Chen. Phys. 1957, v. 26, No. 6, p. 160 °.
(54) ЭЛЕКТРОХИМИЧЕСКАЯ ЯЧЕЙКА ДНЯ ПОЛУЧЕНИЯ МЕДЬСОДЕРЖАЩЕГО ПО ТУПРОБОДНИ-- КОВОГО СОЕДИНЕНИЯ ЗАДАННОГО СОСТАВА (57) Изобретение относитс к устройствам дл электрохимического избирательного легировани медью полупроводниковых материалов, а также дл анализа медьсодержащих соединений. Целью изобретени вл етс повышение точности дозировани меди в исходном материале . Дл этого в чейке с медным электродом сравнени в качестве ионсе- лективной твердоэлектролчтной мембраны использованы сплавы в системе CuCl- CdClg при следующем соотношении компонентов , мол.%: CuCl 65-69S5; CdClg 30,5-35; CuCl 70,5-80; CdCl2 20-29,5. Это повышает точность легировани медью полупроводниковых материалов(54) ELECTROCHEMICAL CELL OF THE DAY OF RECEIVING COPPER-CONTAINING ON CHIPROBAL - COMPOSITE COMPOSITION OF COMPOSITION (57) The invention relates to devices for electrochemical selective doping of semiconductor materials with copper, as well as for the analysis of copper-containing compounds. The aim of the invention is to improve the accuracy of the dosing of copper in the starting material. For this, in the cell with a copper electrode, the CuCl – CdClg system was used as an ion-selective solid electrolyte membrane in the following ratio of components, mol.%: CuCl 65-69S5; CdClg 30.5-35; CuCl 70.5-80; CdCl2 20-29.5. This improves the accuracy of copper alloying of semiconductor materials.
Изобретение относитс к устройствам дл электрохимического избирательного легировани медью полупроводни- - ковых материалов и проведени анализа медьсодержащих систем.и может найти , применение в электронике и цвет- ной металлургии.The invention relates to devices for the electrochemical selective doping of semiconductor materials with copper and the analysis of copper-containing systems. It can be used in electronics and non-ferrous metallurgy.
Целью изобретени вл етс повышение точности дозировани меди в исходном материале.The aim of the invention is to improve the accuracy of the dosing of copper in the starting material.
П р и м е р В чейке составаPRI me R in the cell composition
Pt,CujCuCl-CdCl2|Cu,24$Se, Pt в качестве электрода сравнени жит электролитически чиста медь,в ка честве измерительного электрода - исходный материал , в качестве ион селективной мембраны - система CuClCdClg при соотношении компонентов, мол.%: CuCl 85; CdCl215.Pt, CujCuCl-CdCl2 | Cu, 24 $ Se, Pt as an electrode electrolytically pure copper is compared, as the measuring electrode is the starting material, as the ion of the selective membrane is the CuClCdClg system with a ratio of components, mol%: CuCl 85; CdCl215.
Все вещества в смеси таблетируютс , наход тс в контакте друг с другом и платиновыми токоподводами. Электроды и ионселективна мембрана в виде таблеток отжигаютс при С, отжиг провод т в атмосЛере аргона. Врем откига подбирают экспериментально до посто нства сопротивле ни таблетированного образца. После отжига собирают чейку указанного сое iтава, прижима таблетки друг к дру- гу, и измер ют ЭДС гальванического элемента при исходном составе измерительного электрода в атмосфере арго-,- на. Затем провод т электролиз: пр мойAll substances in the mixture are tableted, in contact with each other and platinum current leads. The electrodes and the ion-selective membrane in the form of tablets are annealed at C, annealing is carried out in an atmosphere of argon. The hatching time is selected experimentally to the resistance of the preformed sample. After annealing, the cell of the indicated soy is collected, pressing the tablets against each other, and the electromotive force of the galvanic cell is measured with the initial composition of the measuring electrode in an argo -, - at atmosphere. Then electrolysis is carried out: direct
и обратный. Пр мой - ввод меди в Cuj4jSe (измерительный электрод - катод), обратный - вывод из Cu2tj Se (измерительный электрод - анод Элек- тролиз ведут в атмосфере аргона при i плотности тока ЗО/ЦкА/см при t 230°C, Изменение состава рассчитывает в соответствии с законом Фараде and reverse. Direct - copper input into Cuj4jSe (measuring electrode - cathode), reverse - output from Cu2tj Se (measuring electrode - anode Electrolysis is carried out in an argon atmosphere at current density IZ / CqA / cm / t at 230 ° C. according to the farade law
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU884424142A SU1644016A1 (en) | 1988-02-18 | 1988-02-18 | Electrochemical cell for producing copper-containing semiconductor of preset composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU884424142A SU1644016A1 (en) | 1988-02-18 | 1988-02-18 | Electrochemical cell for producing copper-containing semiconductor of preset composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU1644016A1 true SU1644016A1 (en) | 1991-04-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU884424142A SU1644016A1 (en) | 1988-02-18 | 1988-02-18 | Electrochemical cell for producing copper-containing semiconductor of preset composition |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU1644016A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2645902C2 (en) * | 2016-07-12 | 2018-02-28 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Вятская государственная сельскохозяйственная академия" (ФГБОУ ВО Вятская ГСХА) | Method and device for electrolytic doping of semiconductor compounds with indium and gallium |
-
1988
- 1988-02-18 SU SU884424142A patent/SU1644016A1/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2645902C2 (en) * | 2016-07-12 | 2018-02-28 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Вятская государственная сельскохозяйственная академия" (ФГБОУ ВО Вятская ГСХА) | Method and device for electrolytic doping of semiconductor compounds with indium and gallium |
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