SU1601659A1 - Pulsed heavy-current semiconductor commutator - Google Patents

Abstract

The invention relates to electrical engineering, in particular, to switching devices assembled on the basis of tablet-type semiconductor devices and can be used in high-current pulsed electrical and technological installations. The purpose of the invention is to enhance the functionality of the switch by increasing the switched currents, reducing the reactance of the switch and increasing its reliability. The switchboard contains a chain of semiconductor elements 1 assembled into a pole and fixed in a metal case 7 by means of flanges 10, cup springs 3, clamping screws 11. Elements 1 are divided into two groups 2 electrically connected through a central current lead 6. The ends of the column using an end current conductor 5 connected to the housing 7. 2 Il.

Description

switch and increase its reliability, the switch. contains a chain of “semiconductor elements 1 assembled in a pole and fixed in a metal case 7 with the help of flanges 10, dish-shaped prutkin 3, clamping screws 11. Elements 1 are divided into two groups 2 electrically connected through central current lead-water 6. The ends of the column are connected to housing 7 by means of the face current-conducting conductor 5. 2 Il.

I The invention relates to electrical engineering, in particular to switching

 devices collected on the basis of

j tablet semiconductor

type, and can be used in highly accurate pulsed electrophysical

i and technological installations, I Purpose of the invention - expansion

the functionality of the switch; torus by increasing the switched

currents and a decrease in reactive resistance of the switch and an increase in reliability;

i Fig. 1 shows the proposed i construction of a semiconductor commutator I; in fig. 2 - constructive connection scheme is possible; the mutator to the source and load, i The design of a semiconductor switch contains a column assembled from semiconductor elements 1,

which is divided into two groups. ; Groups contain an equal amount according to the included semiconductor i elements and are connected in opposite directions. d Column together with cup springs 3 contact disks A with flexible end faces attached to them

current leads 5 in the form of symmetrical: flow 1 9-1хс rays and with clamped between

gr - ppa1. And the central current lead b,

made in the form of a disk with symmetrically ras-code prnis installed

coaxcha inside the hollow metal cylinder 7, having in the wall

windows - for the discharge of the rays of the central current. The pole is electrically isolated from the cylinder with a layer of 8 insulation. Cylind can be made of a monolith

NYM or STRUCTURE M of two 1CHLINDERS,

Connecting the ends “To the ends of the cylinder, by means of bolts, 9 are attached flanges 10, equipped with screws 1b Gbespés, in addition to the adjustment of the contact pressure. Current lead wires podklk, to the beams of the central current lead 6, current lead not to the stems of the cylinder symmetrically between the current supply and the search.

For convenience of connecting the current leads to the cylinder walls, connecting plates 12 can be installed (Fig. 2). The control circuit of the semiconductor elements can be placed in a container mounted on the wall or cylinder.

The switch works as follows.

The switched current flows into the switch through the beams of the central current lead 6, is evenly divided between two groups 2, flows through the contact disks 4, the end current to the water 5 forming the cylinder 7 and distantly through the connecting wires that are connected to the side surface of the cylinder symmetrically between the beams of the central current supply. Thus, when switching a switch into a switched circuit, two groups of semiconductor elements are connected in parallel.

The coaxial design of the switch and the parallel connection of groups of semiconductor elements ensure its low inductance and approximately four times lower reactance as compared with the known construction.

Z R, / R,.

j, g f is equivalent to the frequency of change of the total current flowing in the columns; | Uj- magnetic permeability

environments;

K is the outer radius of the cylinder; R, is the internal radius of the nllinder; 1 is the length of the column of semiconductor elements.

By making the end and center current leads symmetrically, the flow rate of 51xC rays is connected with a current lead n (their wires to the central current lead beams evenly distribute the current density over the area of semiconductor elements, and the coaxial switch design prevents the appearance of a proximity effect. eliminating the proximity effect allows to increase the switched current 2.2-3.4 times in comparison with the known devices ohm (1.1-1.7 times due to elimination of e (} x |) close proximity and another 2 times due to parallel connection of groups.) Between the currents, about TeKarouifiNOi in two groups of semiconductor elements, inductive coupling is absent and when one of the currents increases, there is no EMF preventing the buildup. Secondly, on the other hand, when one of the groups of elements is delayed, the switch reactance doubles, which limits the current flowing through the switched on group and helps level the currents in the parallel connected groups and increases the reliability of the switch.

When the switch operates in the mode of single current pulses, the duration is 10 s, which corresponds to the operating conditions of high-current pulse electrodynamic and technological installations, the use of special heat sinks is inefficient, since the heat power generated in the semiconductor element is hundreds of times higher than the thermal power remove heat from a known construction, including a known one. In a pulsed mode of operation, the permissible duration of a switching current pulse is determined from the passport value of the Joule integral for the selected type of semiconductor elements.

An example of connecting to the switchboard of cable installation, providing a symmetrical distribution of the coiled current between two groups

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semiconductors, shown in FIG. 2. The conductors of the power cables are connected to the beams of the central current lead 6, and the lead wires to the connecting plates 12. The braids of all cables are electrically connected by means of a metal pipe 13 insulated from the cores of the cables and the switch by insulating layer 14

Comparison with the known device shows that the proposed switch allows a switchable current to be increased by a factor of 2.2-3.4, it has a lower (approximately 4 times) reactive resistance when it is switched on in the circuit. It is more reliable due to a more uniform current distribution between groups.

Claims (1)

Invention Formula Pulsed high-current semi-BOAFiHKOBbM switchboard, containing a D1-cell of semiconductor elements of tablet type, made in the form of groups; y and, in order to expand functionality by increasing switching currents and reducing peaKTKBiioro switch resistance, increasing its reliability, the chain of semiconductor elements is made in the form of two groups, states and an equal number of elements, the groups are electrically interconnected through an additionally introduced central conductor, made in the form of a disk with symmetrically diverging rays, and the fixing frame is made in the form of a hollow metal cap, with windows on the side surface of the output beam of the central current lead, the cylinder is electrically isolated from column and mechanically connected to the flanges, and electrically by means of end current leads in the form of flow rate of the rays is connected to the ends of the pole. Fig: 2