SU1581495A1 - Gas heater for producing and repair of semiconductor devices - Google Patents

Abstract

The invention relates to heating devices, in particular to a gas heater, and can be used in the manufacture and repair of multichip semiconductor devices and hybrid integrated circuits (GIS). The purpose of the invention is to improve the quality of manufacture and repair of semiconductor devices by adjusting the magnitude of the local heating spot. The gas heater includes a housing 1, a hollow tip 4, a ceramic core 5 with a heating element 6. The heater is equipped with a hollow tube 8 for adjusting the angle of divergence of the gas jet passing through the core. One end of the tube is fixed in the housing, the heater also has a nozzle 9 fixed on the other end of the tube in the zone of exit of the gas stream from the nozzle. The thermocouple is located inside the nozzle with the possibility of contact with it, and its thermoelectrodes are located inside the tube 8. The heater allows you to adjust the heat spot, which achieves high-quality and accurate heating of the object to be soldered or unsolder without overheating it. 2 hp f-ly, 6 ill.

Description

ten

15

25

The invention relates to welding, in particular to gas heaters. The purpose of the invention is to improve the quality of manufacture and repair of multichip semiconductor devices by adjusting the size of the local heating spot.

FIG. 1 shows a gas heater, a general view; in fig. 2 is the upper part of the heater, side view in FIG. 3 shows section A-A in FIG. one; in fig. And the node I in figure 1; in fig. 5 - location of the heater when soldering crystals; in fig. 6 - the same, when dismantling the crystal.

The gas heater includes a housing 1 (Fig. 1) with current-carrying tires 2 and 3, a central opening and an opening for gas supply (Fig.2), 2d hollow tip 4 (Fig.1) made of quartz glass with a nozzle at one end fixed in the housing 1, a hollow ceramic core 5 located inside the tip 4, a heating element 6 in the form of a spiral laid in a helical groove (not shown) of the ceramic core 5, and connected to tires 2 and 3, a device for measuring the gas heating temperature made in the form of a thermocouple with thermoelectric 7 A device (not shown) and a spot size adjustment device for locally heating the product, made in the form of a hollow tube, 8, passing through the ceramic core 5, fixed at one end with the possibility of axial adjustment in the central opening of the housing 1, and the nozzle 9, fixed at the second end of the tube 8 in the exit zone of the gas jet from the nozzle of the tip 4. The thermocouple 7 of the temperature measuring device is located inside the nozzle 9 with the possibility of contact with it (Fig. 4). The heating element 6 is located on the ceramic core 5 in such a way that each turn of the helix is offset from the previous one by an angle of 15-20 ° (figure 3).

The nozzle 9 of the device for adjusting the size of the spot of local heating of the product is made, for example, in the form of a hemisphere (Fig. 4).

The heater works as follows.

In the gas inlet of the housing 1 (Fig. 2), a gas (argon,

15814954

nitrogen) with a pressure of 0.1-0.15 MPa and a flow rate of 0.1-0.4 mea / h.

A voltage of 36 V is applied to the heating element 6 via busbars 2 and 3. 1Td e,

thirty

35

40

45

50

55

the passage through the coils of the helix 6 is heated to 700-800 ° C and, leaving the nozzle of the tip 4, flows around the nozzle 9, forming a local heating of a product of a certain size.

To change the size of the spot of local heating of the product (figure 5 and 6), it is necessary to move the nozzle 9 in the axial direction from the nozzle of the tip 4. When the nozzle 9 is removed from the nozzle, the size of the spot of local heating decreases (figure 5), and when approaching - increases (Fig.6).

The movement of the nozzle 9 is carried out by moving in the axial direction of the tube 8 in the housing 1.

In the process of attaching (soldering) the crystals 10 (Fig. 5.6) to the substrate 11, the arrangement of the gas heaters can be one-sided (Figure 5 or two-sided (not shown) when the second heater is located symmetrically to the first. In both cases, they are angled 30-45 ° due to the fact that the tool 12 for planting crystals does not allow a jet of gas to be fed vertically down into the attachment zone. In this case (when the heater is at an angle to the attachment point), the heated gas flows around the crystal 10 and the attachment zone on the mean 11, heating them, and tool 12, the crystal is attached to 10.

When disassembling the crystal 10 (Fig. 6, the gas jet is supplied vertically, heating the crystal 10 and the dynenium zone on the substrate 11, after which the tool 12 shifts the crystal 10 from the substrate 11.

The use of a gas heater will allow for a more qualitative and accurate heating in the product of the place where it is necessary to perform a technological operation of connecting or dismantling electronic components, without fear of exceeding the boundaries of the local heating zone and overheating of the product.

Claims (1)

Invention Formula 1. Gas heater for manufacturing and repairing semiconductor when 0 five five d A voltage of 36 V is applied to the heating element 6 via busbars 2 and 3. 1Td e, thirty 35 40 45 50 55 the passage through the coils of the helix 6 is heated to 700-800 ° C and, leaving the nozzle of the tip 4, flows around the nozzle 9, forming a local heating of a product of a certain size. To change the size of the spot of local heating of the product (FIGS. 5 and 6), it is necessary to move the nozzle 9 in the axial direction from the nozzle of the tip 4. As the nozzle 9 is removed from the nozzle, the spot size of the local heating decreases (Figure 5), and when approached, it increases (Fig.6). The movement of the nozzle 9 is carried out by moving in the axial direction of the tube 8 in the housing 1. In the process of attaching (soldering) the crystals 10 (Fig. 5.6) to the substrate 11, the arrangement of the gas heaters can be one-sided (Figure 5) or bilateral (not shown) when the second heater is located symmetrically to the first. In both cases, they are positioned at an angle of 30-45 ° due to the fact that the tool 12 for planting crystals does not allow a jet of gas to be fed vertically down into the attachment zone. In this case (when the heater is located at an angle to the point of attachment) a jet of heated gas flows around the crystal 10 and the attachment zone on the substrate 11, heating them, and the tool 12 produces the attachment of the crystal 10. During the dismantling of the crystal 10 (Fig. 6), a gas jet is supplied vertically, heating the crystal 10 and the attachment zone on the substrate 11, after which the tool 12 shifts the crystal 10 from the substrate 11. The use of a gas heater will allow for a more accurate and high-quality heating in the product of the place where it is necessary to perform the technological operation of connecting or dismantling electronic components, without fear of exceeding the boundaries of the local heating zone and overheating of the product. Claim 1 1. Gas heater for manufacturing and repair of semiconductor priA-A 15 ... 20 ( FIG. 2 FIG L Fig.Z eleven FIG. five Phage. 6