SU1552162A1 - Reference voltage source - Google Patents

Abstract

The invention relates to electrical engineering and is intended for microelectronics. The purpose of the invention is to increase voltage stability. The proposed source contains MOS transistors 1, 2, 4 included in the current mirror circuit, load element 6, for example, a resistor, feedback MOS transistors 5 and MOS transistor 3 connected to it. Improved stability is achieved by using additional MOS transistors 4, 5, providing feedback in the load cell and current distribution in the load with the current mirror transmission coefficient. 3 hp f-ly, 1 ill.

Description

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The invention relates to electrical engineering and is intended for use mainly in microelectronics in the construction of elements and nodes of sources of reference voltages and voltage level shift circuits.

The purpose of the invention is to increase the stability of the output voltage. I The drawing is a schematic diagram of the source of the reference voltage.

The source contains the first, 1 and second 2 MOSFETs connected according to the current mirror circuit, the load of which is the third MOSFET 3 "Additional MOS transistors (k and 5 form an additional branch of the current mirror with a variable 6. Loads. The circuit is powered from a single power source 7.

The reference voltage source operates as follows.

The MOS transistors 1, 2, and 4 of the current mirror through the load element 6 (e.g., a resistor) receive an initial predetermined level of current that is redistributed in the MOS transistors 3 and 5 branch in proportion to the ratios of the MOS transistors 1, 2 and C. The junction point of the second terminals of the MOS transistors 1 and 2 (the drain for the complementary pair) produces a voltage U; that controls the feedback MOS transistor 5, which, in turn, depends on the variation of the current in the load element 6. An increase in the current in the load cell 6 leads to an increase in the potential at the first output of the MOS transistor 5 and to a decrease in the value of the control voltage (gate - source) of the MOS transistor 5. As a result, the current in the load cell 6 decreases due to the component of the current through the MOS- transistor 5.

The reference voltage U0 is developed as the difference between the supply voltage and the voltage drop on the load element 6 and is equal to the voltage drop on the control terminals of the MOS transistors 1. 2 and k with respect to the first output of the power supply 7. The output reference voltage U0 is determined in the first approximation by two components: the threshold voltage UT of MOS transistors 1, 2 and b and the voltage U; . Under the condition of equal slope K of MOS transistors 1, 2 I and k, the voltage U0 is approximately equal to

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H (U; - UT) / 2KR

where Re is the equivalent resistance of the element 6 load. It is obvious that the output voltage U0 is stabilized with respect to the change in the supply voltage, on which it practically does not depend, while the voltage, in turn, is also stable with respect to the supply voltage.

The temperature dependence of the output voltage U0 is mainly determined by the change in the threshold voltages u, which is compensated by the difference in voltages and; - UT.

Claims (3)

Invention Formula 1- The reference voltage source containing the first and second MOS transistors, the first power terminals of which are connected to the first terminal for connecting the power source, and the control terminals are connected to each other and to the second terminal of the second MOS transistor the transistor is connected to the second power output of the third MOS transistor, the first power output of which is connected to the second output for connecting the power source and to the first output of the load element, characterized in that, in order to increase the output voltages, the fourth and fifth MOS transistors are inserted, the first and second power terminals of the fourth MOS transistor are connected respectively to the first terminal for connecting the power source and the second terminal of the load element, and the control terminal is connected to the control terminals the first and second MOS transistors and to the first power output of the fifth MOS transistor, the second power output of which is connected to the second output of the load element, and the control output to the second power output of the first and third MOS transistors, with the first, second and fourth MOS transistors having these conduction, opposite to the type of conductance of the third and the fifth MOS transistors. 2. The source according to claim 1, of tl and h aa y and with the fact that a resistor is used as the load element. 3. Source of PP. 1 and 2, about the fact that the first you 521626 Tori have p-type conductivity, and the third and fifth MOS transistors have n-type conductivity. C, Source of paragraphs. 1 and 2, which is due to the fact that the first output for connecting the power source has a negative polarity voltage relative to the second output water to connect the power source and to connect the power source, the first, second, and fourth MOS transistors have n-type conductivity, and the third and fifth MOS-transistors have p-type conductivity. has a positive polarity with respect to the second output for connecting the power supply, the first, second and fourth MOS transistors Editor V. Petrash Compiled by S.Sitko Tehred L.Oliynyk Order 330 Circulation 6M VNIIPI State Committee for Inventions and Discoveries at the State Committee on Science and Technology of the USSR 113035 Moscow, F-35 Raushsk nab., D. / 5 Production and Publishing Combine Patent, Uzhgorod, st. Gagarin, 101 yes to connect the power supply the first, second, and fourth MOS transistors have n-type conductivity, and the third and fifth MOS-transistors have p-type conductivity. Proofreader O. Kravtsov Subscription