SU1483442A1 - Precision low-voltage integrated stabilivolt - Google Patents

Abstract

The invention relates to electronic engineering. The purpose of the invention is to increase the temperature stability. Introduction to a device containing a control transistor, a scaling circuit and a reference cell, a correction resistor and a compensating element allows to ensure independence from the temperature of the voltage to be stabilized. 1 il.

Description

The invention relates to an electronic (technical) technique and can be used to create precision integral zener diodes with a small dependence of the stabilization voltage on temperature.

The purpose of the invention is to increase the temperature stability of the zener diode.

The drawing shows a schematic diagram of a precision low-voltage integral Zener diode.

The zener diode contains a regulating transistor 1, connected to the output of operational amplifier 2 between the cathode to the anode bus and the base, a scaling circuit consisting of a series-connected diode 3, resistors 4-6, a diode 7 and a correcting resistor 8 and connected between cathode and anode busbars a reference cell consisting of transistors 9 and 10, whose collectors are connected

to the key inverting and inverting inputs of amplifier 2, a current source 11 with a linearly proportional dependence on the temperature of the output current connected between the emitter connection point of transistors 9 and 10 and the anode bus, and two resistors 12 and 13 connected between the diode cathode connection point 3 with a resistor 4 and collectors of transistors 9 and 10, a compensating element consisting of series-connected diodes 14 and 15, a current source 16 connected between the cathode of the diode 15 and the anode bus, three transistors 17-19 and two resistors 20 and 21, the emitter-collector circuit of the transistor 19 is connected between the cathode bus and the cathode of the scaling circuit diode 7, the base of the transistor 19 is directly connected to the collector junction point of the transistor 17 with the emitter of the transistor 18 and through the resistor 20 to the cathode one

(L

bus, the emitter of transistor 17 through a resistor 21 is connected to the cathode bus, and the base is connected to the connection point of diodes 14 and 15, the collector of transistor 18 is connected to the collector of transistor 19, and the base is connected to the cathode of diode 15. The conductivity type of the transistors of the compensating element is opposite to the type of transistors reference cell and control transistor 1.

The device operates in such a way that a quadratic temperature dependence of the emitter current Ij of the transistor 19 is provided, namely

East-EB, 9 East-A, (I8,

where Ucr is the stabilization voltage; U.l. U., h - voltage on diodes 14 and 15;

U, .i ..

U, 614 - emitter-base voltage

transistors 18 and 19, moreover) andA + andA Gui 6 in

K.T1 1e Due to the fact that ie6 --in-- y / where 10 is the saturation current),

T f

And ... in this case 1 ,,,

-E16

Mi

l L - A T (where A is the proportionality factor; T is the absolute temperature).

It is necessary to ensure temperature independence of the current I-jte-If this condition is fulfilled, then 2 (where B is the coefficient of proportionality).

  + I R-zo

UT 1 n Il44.

while brr-q-K - ln | A--, i.e. one,"

increases with increasing temperature, Id

TO

what

- i.e. decreases with increasing temperature.

With proper selection of resistance. In the case of resistors 20.21 K2o and R2i, the sum of IR.JO and 1ep does not change with temperature. This requirement is provided subject to

 “,.

where E. is extrapolated to О К

 forbidden width

zones of silicon (- "1.28); Ј is the coefficient depending on the instrument manufacturing technology ().

In this case, the voltage drop across the resistance of the resistor 8 R8 quadratically increases with increasing temperature. As a result, the non-linearity of the temperature variation of the voltage of the two forward-displacement diodes 3 and 7 of the opposite non-linearity is compensated.

Compared with the prototype, the proposed solution provides a reduction in the temperature variation of the stabilization voltage by 30%.

Based on the precision low-voltage integral Zener diode, a new generation of precision measuring equipment of a higher accuracy class can be created.

Claims (1)

Invention Formula A precision low-voltage integral Zener diode containing a scaling circuit connected between the cathode and anode buses and including the first diode connected in series, the first, second, third resistors and the second diode, the operational amplifier whose power supply wires are connected between the cathode and anode buses and the output connected to the base of the regulating transistor, the collector of which is connected to the cathode and the emitter to the anode bus, the supporting cell, consisting of two transistors, the emitters of which through the first source With a linearly proportional dependence on the output current temperature connected to the anode bus, the base of one of the transistors is connected to the connection point of the first and second resistors of the scaling circuit, the collector is connected to the inverting input of the operational amplifier, the base of the second transistor is connected to the scaling connection circuit, the collector is connected to the non-inverting input of the operational amplifier, while the collectors of the transistors are connected to the connection point via resistors the first diode and the first resistor of the scaling circuit, characterized in that, in order to increase the temperature stability, a correction resistor in the scaling circuit, i  between the cathode of the second diode of the scaling circuit and the anode bus, and the compensating element consisting of 51 next two diodes, the anode of the first of which is connected to the cathode bus, the second current source with a linearly proportional dependence on the temperature of the output current connected between the cathode of the second diode and the anode bus, three transistors and two resistors, the base of the first transistor being connected to the junction point diodes, the emitter is connected via a pershy resistor to the cathode bus, and the collector is connected to the emitter of the second transistor whose base is connected to the cathode 834426 the second diode, and the collector is connected to the connection point of the correction resistor with the cathode of the scaling circuit diode and to the collector of the third transistor, the emitter of which is connected to the cathode bus, and the base is connected directly to the connection point of the collector of the first and emitter 10 of the second transistors and through the second cathode bus resistor, and The compensating element transistors are of the conductivity type opposite to the reference cell transistors and the control transistor.