SU1450665A1 - METHOD OF CREATING SMALL N-P TRANSITIONS AND CONTACT TO THEM - Google Patents

METHOD OF CREATING SMALL N-P TRANSITIONS AND CONTACT TO THEM

Info

Publication number
SU1450665A1
SU1450665A1 SU3996157/25A SU3996157A SU1450665A1 SU 1450665 A1 SU1450665 A1 SU 1450665A1 SU 3996157/25 A SU3996157/25 A SU 3996157/25A SU 3996157 A SU3996157 A SU 3996157A SU 1450665 A1 SU1450665 A1 SU 1450665A1
Authority
SU
USSR - Soviet Union
Prior art keywords
creating small
transitions
contact
silicide
coating
Prior art date
Application number
SU3996157/25A
Other languages
Russian (ru)
Inventor
С.В. Васильев
Н.Н. Герасименко
Original Assignee
Институт Физики Полупроводников Со Ан Ссср
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Физики Полупроводников Со Ан Ссср filed Critical Институт Физики Полупроводников Со Ан Ссср
Priority to SU3996157/25A priority Critical patent/SU1450665A1/en
Application granted granted Critical
Publication of SU1450665A1 publication Critical patent/SU1450665A1/en

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

Способ создания мелких n-p-переходов и контактов к ним, включающий операции ионного легирования, термообработки и нанесения покрытия из силицидообразующего металла, отличающийся тем, что, с целью повышения выхода годных за счет устранения опасности проплавления n-слоя при уменьшении его толщины, в качестве силицидообразующего используют металл, обладающий величиной электроотрицательности, Х, удовлетворяющей условию: Х> Х> X, где Х- электроотрицательный легирующей примеси, X- электроотрицательность кремния, а термообработку проводят после нанесения покрытия из силицидообразующего металла при 550-1100 К в течение 15-45 мин.A method of creating small np-junctions and contacts to them, including the operation of ionic alloying, heat treatment and coating of a silicide-forming metal, characterized in that, in order to increase the yield by eliminating the danger of penetration of the n-layer while reducing its thickness use a metal having an electronegativity value, X, satisfying the condition: X> X> X, where X is an electronegative dopant, X is the electronegativity of silicon, and heat treatment is carried out after coating of silicide-forming metal at 550-1100 K for 15-45 minutes.

SU3996157/25A 1985-12-20 1985-12-20 METHOD OF CREATING SMALL N-P TRANSITIONS AND CONTACT TO THEM SU1450665A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3996157/25A SU1450665A1 (en) 1985-12-20 1985-12-20 METHOD OF CREATING SMALL N-P TRANSITIONS AND CONTACT TO THEM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3996157/25A SU1450665A1 (en) 1985-12-20 1985-12-20 METHOD OF CREATING SMALL N-P TRANSITIONS AND CONTACT TO THEM

Publications (1)

Publication Number Publication Date
SU1450665A1 true SU1450665A1 (en) 1999-11-10

Family

ID=60536276

Family Applications (1)

Application Number Title Priority Date Filing Date
SU3996157/25A SU1450665A1 (en) 1985-12-20 1985-12-20 METHOD OF CREATING SMALL N-P TRANSITIONS AND CONTACT TO THEM

Country Status (1)

Country Link
SU (1) SU1450665A1 (en)

Similar Documents

Publication Publication Date Title
SE8500419D0 (en) METHOD FOR MANUFACTURE OF ELECTRODE
BE867434A (en) METHOD AND DEVICE FOR MANUFACTURING NEGATIVE ELECTRODES, ESPECIALLY OF CADNIUM OR ZINC, FOR ELECTROCHEMICAL GENERATORS AND NEGATIVE ELECTRODES THUS OBTAINED
SU1450665A1 (en) METHOD OF CREATING SMALL N-P TRANSITIONS AND CONTACT TO THEM
JPS53105177A (en) Manufacture of semiconductor device
JPS51142983A (en) Scr
ES494351A0 (en) PROCEDURE FOR THE TREATMENT OF LEAD CHLORIDE SOLUTIONS
JPS5326664A (en) Formation of ohmic contact
JPS5210908A (en) Operation method for oil-cooled positive-displacement rotary compresso r
JPS5425492A (en) Machining of insulating bushing
JPS5320648A (en) Method of treating sludge containing metal
JPS5237766A (en) Semiconductor device
JPS53141137A (en) Method of inhibiting corrosion of metal coming into contact with aqueous calcium chloride solution
JPS52143784A (en) Surface treating method of metal films provided to semiconductor device
JPS53111457A (en) Switching regulator
JPS51150283A (en) Semiconductor device
JPS524170A (en) Manufacturing process of semiconductor element
JPS55128571A (en) Treatment for nonelectrolytically nickel-plated surface to be soldered
JPS52143598A (en) Electrode for electrical discharge machining
JPS5272665A (en) Outer blade of reciprocating electric shaver
JPS53145583A (en) Semiconductor device and production of the same
JPS5231922A (en) Copper alloy having free cutting property
JPS5361274A (en) Production of high frequency semiconductor devce
JPS52106958A (en) Method of making inner blade of reciprocating electric razor
JPS56115167A (en) Fixing contact of govenor for micromotor
JPS52135266A (en) Wire bonding device