SU145033A1 - Method for determining stresses and inhomogeneities in semiconductor crystals - Google Patents
Method for determining stresses and inhomogeneities in semiconductor crystalsInfo
- Publication number
- SU145033A1 SU145033A1 SU707678A SU707678A SU145033A1 SU 145033 A1 SU145033 A1 SU 145033A1 SU 707678 A SU707678 A SU 707678A SU 707678 A SU707678 A SU 707678A SU 145033 A1 SU145033 A1 SU 145033A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- inhomogeneities
- semiconductor crystals
- determining stresses
- determining
- semiconductor
- Prior art date
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
В известных способах определени качества полупроводниковых кристаллов путем измерени их двойного лучепреломлени не достигаетс высока точность измерениГ ввиду малой чувствительности электронно-оптических преобразователе.In the known methods for determining the quality of semiconductor crystals by measuring their birefringence, a high measurement accuracy is not achieved due to the low sensitivity of the electron-optical converter.
Предложе 1НЬ Й способ определе 1и напр жен 1Й нсоднородиостей в полупровод 1ковых кристаллах основаи на сканировании узким пучком инфракрасного излучени сследуемого полупроводникового кристалла с одновременной траисфорл ац ей выходного усиленного сигнала в видимое излучение, регистрируел ое на обычном фотоматериале, который сканируетс синхро но с иccлeдyeмы образцом. При применении предложенного способа исследование производитс в широком диапазоне инфракрасного .We propose a 1H method for determining 1 and straining 1H inhomogeneity in semiconductor crystals based on a narrow infrared beam scanned by a traced semiconductor crystal with a simultaneous transverse signal of the output amplified signal into visible radiation recorded on ordinary photographic material that is scanned by a pattern. When applying the proposed method, the study is performed in a wide range of infrared.
Эффективность способа дл вь влен различного рода дефектов в полупроводниковых материалах подтверждаетс практической проверкой .The effectiveness of the method for detecting various kinds of defects in semiconductor materials is confirmed by practical testing.
Предмет изобретени Subject invention
Способ определени напр же 1ий и неоднородностей в полупроводниковых кристаллах путел измерени их двойного лучепреломлени , отличаю и; и йс тел, что, с повышени чувствительности измерени , производитс сканирование узким пучком инфракрасного излучени исследуемого полупроводн ;кового кристалла с одновременным преобразованием усиленного выходного сигнала в видимое излучение, регистрируемое на фотоматериале, сканируемом синхронно с исследуемым образцом.The method of determining the first and inhomogeneities in semiconductor crystals is the way to measure their birefringence, and I distinguish it; and the body, which, with an increase in the sensitivity of the measurement, scans the narrow infrared radiation of the investigated semiconductor crystal with simultaneous conversion of the amplified output signal into visible radiation recorded on the photographic material scanned synchronously with the sample under study.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU707678A SU145033A1 (en) | 1960-08-08 | 1960-08-08 | Method for determining stresses and inhomogeneities in semiconductor crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU707678A SU145033A1 (en) | 1960-08-08 | 1960-08-08 | Method for determining stresses and inhomogeneities in semiconductor crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
SU145033A1 true SU145033A1 (en) | 1961-11-30 |
Family
ID=48300640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU707678A SU145033A1 (en) | 1960-08-08 | 1960-08-08 | Method for determining stresses and inhomogeneities in semiconductor crystals |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU145033A1 (en) |
-
1960
- 1960-08-08 SU SU707678A patent/SU145033A1/en active
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