SU145033A1 - Method for determining stresses and inhomogeneities in semiconductor crystals - Google Patents

Method for determining stresses and inhomogeneities in semiconductor crystals

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Publication number
SU145033A1
SU145033A1 SU707678A SU707678A SU145033A1 SU 145033 A1 SU145033 A1 SU 145033A1 SU 707678 A SU707678 A SU 707678A SU 707678 A SU707678 A SU 707678A SU 145033 A1 SU145033 A1 SU 145033A1
Authority
SU
USSR - Soviet Union
Prior art keywords
inhomogeneities
semiconductor crystals
determining stresses
determining
semiconductor
Prior art date
Application number
SU707678A
Other languages
Russian (ru)
Inventor
Б.Н. Гречушников
Г.И. Дистлер
В.С. Чудаков
Original Assignee
Б.Н. Гречушников
Г.И. Дистлер
В.С. Чудаков
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Б.Н. Гречушников, Г.И. Дистлер, В.С. Чудаков filed Critical Б.Н. Гречушников
Priority to SU707678A priority Critical patent/SU145033A1/en
Application granted granted Critical
Publication of SU145033A1 publication Critical patent/SU145033A1/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Description

В известных способах определени  качества полупроводниковых кристаллов путем измерени  их двойного лучепреломлени  не достигаетс  высока  точность измерениГ ввиду малой чувствительности электронно-оптических преобразователе.In the known methods for determining the quality of semiconductor crystals by measuring their birefringence, a high measurement accuracy is not achieved due to the low sensitivity of the electron-optical converter.

Предложе 1НЬ Й способ определе 1и  напр жен 1Й нсоднородиостей в полупровод 1ковых кристаллах основаи на сканировании узким пучком инфракрасного излучени  сследуемого полупроводникового кристалла с одновременной траисфорл ац ей выходного усиленного сигнала в видимое излучение, регистрируел ое на обычном фотоматериале, который сканируетс  синхро но с иccлeдyeмы образцом. При применении предложенного способа исследование производитс  в широком диапазоне инфракрасного .We propose a 1H method for determining 1 and straining 1H inhomogeneity in semiconductor crystals based on a narrow infrared beam scanned by a traced semiconductor crystal with a simultaneous transverse signal of the output amplified signal into visible radiation recorded on ordinary photographic material that is scanned by a pattern. When applying the proposed method, the study is performed in a wide range of infrared.

Эффективность способа дл  вь  влен   различного рода дефектов в полупроводниковых материалах подтверждаетс  практической проверкой .The effectiveness of the method for detecting various kinds of defects in semiconductor materials is confirmed by practical testing.

Предмет изобретени Subject invention

Способ определени  напр же 1ий и неоднородностей в полупроводниковых кристаллах путел измерени  их двойного лучепреломлени , отличаю и; и йс  тел, что, с повышени  чувствительности измерени , производитс  сканирование узким пучком инфракрасного излучени  исследуемого полупроводн ;кового кристалла с одновременным преобразованием усиленного выходного сигнала в видимое излучение, регистрируемое на фотоматериале, сканируемом синхронно с исследуемым образцом.The method of determining the first and inhomogeneities in semiconductor crystals is the way to measure their birefringence, and I distinguish it; and the body, which, with an increase in the sensitivity of the measurement, scans the narrow infrared radiation of the investigated semiconductor crystal with simultaneous conversion of the amplified output signal into visible radiation recorded on the photographic material scanned synchronously with the sample under study.

SU707678A 1960-08-08 1960-08-08 Method for determining stresses and inhomogeneities in semiconductor crystals SU145033A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU707678A SU145033A1 (en) 1960-08-08 1960-08-08 Method for determining stresses and inhomogeneities in semiconductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU707678A SU145033A1 (en) 1960-08-08 1960-08-08 Method for determining stresses and inhomogeneities in semiconductor crystals

Publications (1)

Publication Number Publication Date
SU145033A1 true SU145033A1 (en) 1961-11-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
SU707678A SU145033A1 (en) 1960-08-08 1960-08-08 Method for determining stresses and inhomogeneities in semiconductor crystals

Country Status (1)

Country Link
SU (1) SU145033A1 (en)

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