SU1415386A1 - Device for controlling inverter stand transistors - Google Patents

Abstract

The invention relates to electrical engineering and can be used in secondary power sources. The purpose of the invention is to simplify and improve the frequency properties. The device contains a master oscillator 1 connected to a power amplifier 2 with an output transformer 3. The transformer windings are connected to the main transistors 10 and 11 and additional transistors 18 and 19. The execution of the transistor according to the unattended key scheme allows reducing the dissipation time. A single transformer is used to control the inverter rack, which simplifies the device. 1 il. with fi (L

Description

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The invention relates to converter technology and may be used in the development of secondary power sources with key transistors.

The purpose of the invention is to simplify the device and improve the frequency; properties by reducing the absorption time.

The drawing shows a diagram of the device.

The circuit contains the master oscillator 1, the amplifier. 2 power with Vkodnaya transformer 3, having the main 4 and 5 and additional 6 and 7 windings The main windings 4 and 5 are connected through the base resistors 8 and 9 with the transitions of the base-emitter transistors 10 and 11 of the rack. Additional windings 6 and 7 through additional diodes 12 and 13 are connected with a collector junction — the base of the power transistors. Transistor state sensors are made on resistors 14-17 connected to the KOjmeKTop-emitter of power transistors. The outputs of the status sensors are connected to the bases of the additional transistors 18 and 19, the collectors connected to the base, and the emitters to the emitters of the rack transistors. Diodes 20 and 21 are included in the collector circuits to eliminate the inverse currents of the transistors 10 and 11.

The scheme works as follows (im way.

For example, a voltage is formed at the output windings 4-7. Opened the power transistor 10, under the action of the voltage of the winding 6, a part of the base current flows through the circuit: winding 6 - diode 12 - junction collector - base of the transistor 10 and removes it from the deep saturation mode. At the moment of changing the polarity of the voltage on the windings of the transformer 3, the power transistor 10 does not instantly close due to resorption of excess carriers. As long as the transistor 10 is open, the entire supply voltage is applied to the resistors 16 and 17. A part of the voltage {l from the resistor 17 goes to the base-to-emitter junction of the additional transistor 19 and maintains it in the open state. 0TK1) The experienced transistor 19 shunts the 6a3a-3NniTTep junction of the power transistor 11 and does not allow it to open until the transistor 10 is fully operated. Thus, the implementation of the transistor according to the unsaturated key scheme reduces the resorption time. The transistor state sensor in the proposed device has a simple circuit, and only one transformer is used to control the resistant inverter, therefore the proposed device is much simpler than the known one. The additional transistors are chosen as low-voltage ones with a high current gain, and as a result, the power losses in the resistors of the shi transistor sensors are reduced.

Claims (1)

Invention Formula A device for controlling the transistors of an inverter rack containing a master oscillator output connected to a power amplifier connected to an output transformer, main output1 the first windings of which are intended to be connected to the base-emitter junctions of the rack transistors, transistor state sensors, additional diodes characterized by so that, in order to simplify the device and improve frequency properties by reducing the absorption time, it is equipped with two additional transistors, the power amplifier is With additional output windings, the transistor state sensor is produced in the form of voltage dividers on resistors designed to be connected to the collector-emitter transitions of the rack transistors, the common point of each divider connected to the bases of additional transistors connected to the collectors to the bases, and emitters to emitters of power transistors, the additional windings of power amplifiers through additional diodes are designed to be connected to the collector junction - the base of the rack transistors.