SU1385900A1 - Method and apparatus for ion beam production - Google Patents
Method and apparatus for ion beam production Download PDFInfo
- Publication number
- SU1385900A1 SU1385900A1 SU853993071A SU3993071A SU1385900A1 SU 1385900 A1 SU1385900 A1 SU 1385900A1 SU 853993071 A SU853993071 A SU 853993071A SU 3993071 A SU3993071 A SU 3993071A SU 1385900 A1 SU1385900 A1 SU 1385900A1
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- SU
- USSR - Soviet Union
- Prior art keywords
- electrodes
- laser
- tube
- ion beam
- target
- Prior art date
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- Electron Sources, Ion Sources (AREA)
Abstract
Изобретение относитс к.технике получени потоков зар женных частиц и может найти применение в ионной имплантации, легировании и нанесении пленок и покрытий. Целью изобретени вл етс увеличение КГЩ источника ионов, плотности ионного -тока и поперечного сечени ионного пучка. На поверхность мишени воздействуют лазерным излучением, мощность которого равна критической мощности испарени вещества мишени, при которой потери тепла из-за теплопроводности пренебрежимо мальи Струю испаренного вещества, распростран ющуюс через отверсти в р де плоских электродов навстречу лазерному лучу, ионизуют дополнительным разр дом между трубкой и электродами. Выт гивание ионов из плазмы осуществл етс подачей напр жени на электроды ускор ющей систе- мы,.плоскости которых перпендикул рны электродам выт гивающей системы и параллельны оптической оси, 2 с.п. ф-лы, 1 ил, - . - е to аThe invention relates to a technique for producing streams of charged particles and may find application in ion implantation, doping, and the deposition of films and coatings. The aim of the invention is to increase the CGS of the ion source, the density of the ionic current and the cross section of the ion beam. The target surface is affected by laser radiation, whose power is equal to the critical evaporation power of the target material, in which heat loss due to thermal conductivity is negligible. The jet of evaporated substance propagating through holes in a row of flat electrodes towards the laser beam is ionized by an additional discharge between the tube and electrodes. The extraction of ions from the plasma is carried out by applying a voltage to the electrodes of an accelerating system, the planes of which are perpendicular to the electrodes of the drawing system and parallel to the optical axis, 2 s.p. f-ly, 1 silt, -. - e to a
Description
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зс елzs ate
Изобретение относитс к области технической физики поможет быть использовано дл/1 осуществлени различных технических процессов таких, как легирование поверхностей металлов и.полупроводников, дл нанесени поверхностных покрытий пассивировани поверхностей металлов и т.д.The invention relates to the field of technical physics will help to be used for the implementation of various technical processes such as alloying of metal surfaces and semiconductors, for applying surface coatings for passivating metal surfaces, etc.
Целью изобретени вл етс увеличение КПД источника ионов, увеличение плотности ионного тока и площади поперечного сечени ионного пучка.The aim of the invention is to increase the efficiency of the ion source, increase the ion current density and the cross-sectional area of the ion beam.
На чертеже показан источник ионовThe drawing shows the ion source
Вакуумна камера 1 источника ионов 15 чающийс тем, что, с цельюThe vacuum chamber 1 of the ion source 15 is due to the fact that, in order to
Испытани источника показали, что в разр де реализуетс плотность час- .тиц, обеспечивающа плотность нонно- го тока более tOO мА/см. Tests of the source showed that in the discharge the density of the particles is realized, providing a non-current current density of more than tOO mA / cm.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU853993071A SU1385900A1 (en) | 1985-12-23 | 1985-12-23 | Method and apparatus for ion beam production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU853993071A SU1385900A1 (en) | 1985-12-23 | 1985-12-23 | Method and apparatus for ion beam production |
Publications (1)
Publication Number | Publication Date |
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SU1385900A1 true SU1385900A1 (en) | 1990-08-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU853993071A SU1385900A1 (en) | 1985-12-23 | 1985-12-23 | Method and apparatus for ion beam production |
Country Status (1)
Country | Link |
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SU (1) | SU1385900A1 (en) |
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1985
- 1985-12-23 SU SU853993071A patent/SU1385900A1/en active
Non-Patent Citations (1)
Title |
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.Rautenbuch W.L. Ion sources. Nuclear Instruments and Methods, 1960, V 9, C.199. Альтуэов Ю.К., Басов Т,A. Лазерно- плазменный источник ионов дл легировани твердых тел, ЖТФ, т.49, вып.9, 1979. . * |
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