SU1357867A1 - Method of determining crystal electric conduction anisotropy - Google Patents
Method of determining crystal electric conduction anisotropy Download PDFInfo
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- SU1357867A1 SU1357867A1 SU853925230A SU3925230A SU1357867A1 SU 1357867 A1 SU1357867 A1 SU 1357867A1 SU 853925230 A SU853925230 A SU 853925230A SU 3925230 A SU3925230 A SU 3925230A SU 1357867 A1 SU1357867 A1 SU 1357867A1
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- USSR - Soviet Union
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- anisotropy
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- selected axes
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- crystal
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Abstract
Изобретение может быть использовано при конструировании электрооптических устройств и позвол ет повысить точность определени анизотропии . электропроводности. На грань кристалла нанос т охранную сетку 1, в центрах которой размещают электроды (Э) 2-5. Ширина полоски охранной сетки 1 равна 0,2,. а зазор между ней и 32-5 равен 0,ЗЕ, где 2 - сторона квадратных Э 2 - 5. Заземлив охранную сетку 1, последовательно измер ют токи между Э 2-4 и 2-3 и по значени м их величин вдоль выбранных осей Ij, и I.J определ ют анизотропию кристалла как () . 1 ил. СО со ел 00 Oi The invention can be used in the design of electro-optical devices and improves the accuracy of anisotropy determination. electrical conductivity. A guard grid 1 is placed on the face of the crystal, in the centers of which electrodes (E) 2-5 are placed. The width of the security grid strip 1 is equal to 0.2 ,. and the gap between it and 32-5 is 0, WE, where 2 is the square E side 2–5. The protective grid 1 is grounded, currents between E 2-4 and 2-3 are measured successively and by the values of their values along the selected axes Ij, and IJ define the anisotropy of the crystal as (). 1 il. CO co 00 00
Description
Изобретение относитс к технике измерений, квантовой злектронике.и, в частности, может быть использовано при конструировании злектрооптических устройств.The invention relates to a measurement technique, quantum electronics, and, in particular, can be used in the design of electro-optical devices.
Целью изобретени вл етс повьппе- ние точности определени анизотропии электропроводности.The aim of the invention is to increase the accuracy of determining the anisotropy of electrical conductivity.
. На чертеже дана схема осуществлени способа.. The drawing is a diagram of the implementation of the method.
На схеме обозначены: охранна сетка 1, злектроды 2-5, нанесенные на одну из граней исследуемого кристалла вдоль выбранных осей X и Z.The diagram shows: security grid 1, electros 2-5, deposited on one of the faces of the investigated crystal along selected axes X and Z.
Способ определени анизотропии осуществл етс следующим образом.The method for determining anisotropy is carried out as follows.
На одну из граней кристалла нанос т охранную сетку 1 и электроды 2-5 Причем, ширина полоски охранной сетки равна 0,21,, а между ней и электродом равен 0,31, где 1 - сторона квадратных электродов 2-5. Кроме того, электроды 2-5 располагаютс в центрах охранной сетки 1 и вдоль выбранных осей. Последовательно измер ют токи между электродами 2-4 и 2-3, предварительно заземлив охранную сетку 1. По измеренным величинам тоРедактор О.ГоловачA guard grid 1 and electrodes 2-5 are applied to one of the crystal faces. Moreover, the width of the security grid strip is 0.21, and between it and the electrode is 0.31, where 1 is the side of square electrodes 2-5. In addition, electrodes 2-5 are located at the centers of the guard grid 1 and along selected axes. The currents between electrodes 2-4 and 2-3 are sequentially measured, having previously grounded the security grid 1. According to the measured values, the editor is O. Golovach
Составитель Кринов Техред А.КравчукCompiled by Krinov Tehred A. Kravchuk
Заказ 5994/45 Тираж 730ПодписноеOrder 5994/45 Circulation 730 Subscription
ВНИИПИ Государственного комитета СССРVNIIPI USSR State Committee
по делам изобретений и открытий 113035, Москва, Ж-35, Раушска наб., д. 4/5for inventions and discoveries 113035, Moscow, Zh-35, Raushsk nab., 4/5
Производственно-полиграфическое предпри тие, г. Ужгород, ул. Проектна , 4Production and printing company, Uzhgorod, st. Project, 4
ков вдоль выбранных осей 1 дл первого случа и 1 ДД1Я второго случа определ ют анизотропию кристалла какalong the selected axes 1 for the first case and 1 DD1I of the second case, the anisotropy of the crystal is defined as
,г1г%о, в1Э т-/ . I . 1х, r1g% o, v1E t- /. I. 1x
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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SU853925230A SU1357867A1 (en) | 1985-07-09 | 1985-07-09 | Method of determining crystal electric conduction anisotropy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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SU853925230A SU1357867A1 (en) | 1985-07-09 | 1985-07-09 | Method of determining crystal electric conduction anisotropy |
Publications (1)
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SU1357867A1 true SU1357867A1 (en) | 1987-12-07 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SU853925230A SU1357867A1 (en) | 1985-07-09 | 1985-07-09 | Method of determining crystal electric conduction anisotropy |
Country Status (1)
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SU (1) | SU1357867A1 (en) |
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1985
- 1985-07-09 SU SU853925230A patent/SU1357867A1/en active
Non-Patent Citations (1)
Title |
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Ковтонюк Н.Ф., Концевой Ю.А. Измерени параметров полупроводниковых материалов. - М.: Металлурги , 1970, с. 66. Гуль B.C., Царский Л.Н. и др. Электропровод щие полимерные материалы. - М.: Хими , 1968, с. 51. * |
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