SU1241408A1 - Frequency multiplier - Google Patents

Abstract

This invention relates to the field of radio engineering. The output power increases and the level of spurious harmonics decreases. The input oscillations (Qx) with a frequency. The waves are excited with the same power level — in the 1st and 2nd compartments of the 1st segment of the waveguide 1. The oscillators in the 1st compartment on semiconductor diodes (PD) 6, 7 acquire phase shift% with respect to K and fluctuations on PD 8, 9 - phase shift 4 0-1G / 2. Under the action of Qx in DC 6–9, oscillations with multiples of frequencies are excited. Because GSH 6, 7, 8, 9 are connected in opposite directions, then on the 1st and 2nd metal, to conductors 4, 10 only even harmonics jfex- flow. In the plane of inclusion of conductors 4 and 10, in cross section of segment 1, frequencies 4 -fbx 8 jg, etc. and antiphase oscillations with frequencies of 2 fbx, 6 | bx, etc. T. arr., In the multiplier in the spectrum of output oscillations (K OUT) is present. only harmonics that are multiples of 4, ie match the parasitic harmon. components located near the frequency K Ых, Il. with (L

Description

d.cto -w / Ao

one

The invention relates to radio engineering and can be used in receiving and transmitting radio equipment for various purposes.

The aim of the invention is to increase the output power and reduce the level of spurious harmonics of the frequency multiplier. . .

The drawing shows the frequency multiplier design.

The frequency multiplier contains the first segment of the waveguide 1, to the first narrow wall of which, through the first element of communication 2, the first wide wall of the second segment of the waveguide 3 is connected with the first end, the first metal conductor 4 is connected to the second end of the waveguide, connecting via the first element connection 2 of the first and second waveguides and 3, a metal partition 5, mounted on the longitudinal axis of the first segment of the waveguide 1, parallel to its wide walls. The first, second, third and fourth semiconductor diodes 6–9 are connected by their first terminals of the same name, respectively, to the wide walls of the first segment of waveguide 1 and to the metal partition 5, and to the second ends of the first and second metallic conductors 4 and 10 The axes of the first, second, third, and fourth semiconductor diodes 6–9 are located on one straight line, perpendicular to the wide walls of the first segment of waveguide 1, the first end of the second metal conductor 10 through the second element The nt connection 11 is connected to the second wall of the second segment of the waveguide 3, and the metal plate 12 is attached to the second narrow wall of the first segment of the waveguide 1 opposite the first and second semiconductor diodes 6 and 7, and the dimensions of the metal partition 5 and the metal plate 12 are determined from ratios

OooSo-o).

) J

6l -vb.

b. (b, -t) / 7% OL

/ I, 1 / - - - 2. N 2

% 0-w) -Lo

S

0

four

0

3

Vj bh

0

five

0

five

0

five

4082

where 0-0 and b0 are the width and height of the first segment of waveguide 1; AO is the wavelength in free space; fe and f) i - the height of the compartments of the first segment of the waveguide 1; thickness and height of the metal plate 12; t- - metal thickness

partitions 5;

{y is the distance from the open end of the metal septum 5 to the semiconductor diodes 6-9;

d is the distance from semiconductor diodes 6–9, to the first narrow wall of the first segment wave-water 1.

The output oscillations with a frequency of th Vc. Obs: are waited with the same power level in the first and second compartments of the first segment of waveguide 1. At the same time, oscillations in the first compartment on the semi-redox diodes 6 and 7 acquire some phase shift YC relative to the input oscillation oscillations on semiconductor diodes 8.9 - phase shift I,

li: / 2.

Under the action of input oscillations in semiconductor diodes 6-9, excitation is given oscillations with frequencies that are multiples of the input frequency. Since semiconductor diodes 6–9 are connected in a counter-series manner, only the even harmonics of the input frequency flow through the first and second metal conductors 4 and 10. In the plane of inclusion of the first and second metallic conductors 4 and -To in the cross section of the first segment of the waveguide 1 is phase-wise. - oscillations with frequencies 4 -fix 8 ff, f, etc. and antiphase - oscillations with frequencies of 2-f, 6 fax, etc.

Thus, the frequency multiplier in the output oscillation spectrum contains only harmonics that are multiples of 4 j-, i.e., there are practically no parasitic harmonic components Jup1 1e ,, located near the frequency of the output oscillations.

 the invention

The frequency multiplier, containing; the first segment of the waveguide, to the first narrow

3

The wall of which through the first element is connected to the first wide ste. The second segment of the waveguide, to the second wide wall of which is connected by the first end of the first metallic conductor, connecting the first and second segments of the waveguide and the first and second semiconductor diodes, the first and the second semiconductor diodes In order to increase the output power and reduce the level of parasitic harmonics, the third and fourth semiconductor diodes, the second communication element, the second metal conductor, the metal partition, and the metal plate are additionally introduced into it. The partition wall is installed on the longitudinal axis of the first waveguide section, parallel to its wide walls, the first and second, third and fourth semiconductor diodes are connected to the wide walls of the first segment of the waveguide and to the metal partition, and the second to the same name, and - to the second ends of the first and second metallic conductors, the axis of the first. The second, third, and fourth semiconductor diodes are located on one straight, perpendicular to the wide walls of the first section of the waveguide; the first end of the second metal conductor is connected to the second wide wall of the second segment through the second coupling element

,

Editor A.Dolinich Order 3610/52

Compiled by V. Roshchin

Techred L. Oleynik Proof-reader V. Vut ha

Circulation 816 Subscription VNIIPI USSR State Committee

for inventions and discoveries 113035, Moscow, Zh-35, Raushsk nab., 4/5

Production and printing company, Uzhgorod, Projecto st., 4

4084

the waveguide, the metal plate is attached to the second narrow wall of the first waveguide section opposite the first and second semiconductor diodes, and the dimensions of the metal partition and the metal plate are determined from the ratio

d

cu) (ao-M g (to -w / Ao

)

 "Aoe ioe-w / J

.lib;

b.4bo-t) / y / w-v V / ()

where uo and DO are the width and height of the first segment of the waveguide; Do - wavelength in i

Mr. space; o / - the height of the compartments of the first

-; j you fj s 5

0

W, (2 - waveguide length; thickness and height of the metal plate; thickness of the metal partition;

U is the distance from the open end of the metal septum to semiconductor diodes;

and. - distance from semiconductor diodes to the first narrow wall of the first waveguide section.

Claims (2)

Claim Frequency multiplier containing ^ the first segment of the waveguide, to the first narrow 3 1241408 the wall of which through the first coupling element is connected with the first wide wall. with the second segment of the waveguide, to the second wide wall of which is connected; nen first end of the first metallic ₅ 'cue conductor connecting via the first coupling member first and second waveguide segments, and the first and second semiconductor diodes to Whitlock and thicket minutes with i. In order to increase the output power and reduce the level of parasitic harmonics, the third and fourth semiconductor diodes, the second coupling element, the second metal conductor, the metal partition and the metal plate are additionally introduced, while the metal partition is installed on the longitudinal axis The first waveguide cutoff, parallel to its 20 wide walls, the first and second, third and fourth semiconductor diodes with their first like terminals connected respectively to the wide walls n The first segment of the waveguide 'and to the metal partition, and the second same conclusions - to the second ends of the first and second metal conductors, the axis of the first, second, third and fourth semiconductor diodes - ³⁰ are laid on one straight line perpendicular to the wide walls of the first waveguide segment; the first end of the second metal conductor through the second coupling element is connected to the second wide wall of the second segment Waveguide, metal plate attached to the second narrow wall, the first segment of the waveguide opposite the first and second semiconductor diodes, and the dimensions of the metal partition and the metal plate are determined from the relation the length of the waveguide; D _about - the wavelength in freedoms ^> Mr. space; B / - height of the compartments of the first waveguide length; ^ 2 - thickness and height of the metal plate; B - metal thickness partitions; - distance from the open end of the metal partition to semiconductor diodes; - distance from semiconductor diodes to the first narrow wall of the first segment of the waveguide.