SU1108469A1 - Device for multiplying voltages together - Google Patents

Abstract

A DEVICE FOR OVERVOLTAGE VOLTAGE, containing a current generator, executed on a bipolar transistor, and an element with controlled conductivity, made on a field-effect transistor, a current-limiting resistor, the first output of which is connected to the base of a bipolar transistor. A torus whose collector is connected to a single electrode of the field-effect transistor, the second electrode of which is connected to the zero-potential bus, the gate of the field-effect transistor is the input of the first signal multiplier, the emitter of the bipolar transistor is the input of the second signal multiplier, the bipolar transistor is output The device is characterized in that, in order to simplify while maintaining accuracy of operation, the second output of the current-to-contact (9 of a single resistor is connected to a bus of zero potential.

Description

The invention relates to electrical computing devices and can be used in analog computers.

A device for multiplying voltages is known, which contains amplifying transistors, an element with controlled conductivity, implemented on a TpaHS Hctope field amplifier, a paraphane amplifier Ln.

The disadvantage of this device is the complexity of the functional scheme.

Closest to the present invention is a device for multiplying voltages containing a first current-setting transistor, the emitter of which is the input of the first signal multiplier and connected to the first terminals of the first and second current-limiting resistors, the second terminals of which are connected respectively to the base and collector of the second current-setting transistor the emitter of which is connected to the zero potential bus, an element with controlled conductivity, made on a field-effect transistor, which is connected to the bus zero of potential, a drain of the FET output device is connected to the collector and the voltage driving the first transistor, the base of which the third through the current limiting resistor connected to the collector of the second voltage driving transistor, the gate of the FET is input to a second signal-factor 121,

However, this device also has a complex functional circuit.

The aim of the invention is to simplify while maintaining accuracy.

The goal is achieved by the fact that in a known device for multiplying voltages, containing a current generator, fulfilled on a bipolar transistor, and an element with controlled conductivity, fulfilled on a field-effect transistor, the current limiting resistor, the first transistor of which is connected to the base of the bipolar transistor, which is connected to one electrode of the field-effect transistor, the second electrode of which is connected to the zero-potential bus, the gate of the field-effect transistor is the input of the first Igia-to-gel multiplier; the emitter of the bipolar transistor is the input of the second signal multiplier, the collector of the bipolar transistor is the output of the device, the second transistor of the current-limiting resistor is connected to the zero potential bus.

In the drawing, shows a functional diagram of the device.

The diagram shows the field-effect transistor 1, the input of the first signal-multiplier 2, the zero-potential bus 3, the output 4, the bipolar transistor 5, the current-limiting resistor 6, the input of the second signal-multiplier 7.

The device works as follows.

 Under the influence of the voltage from the input of the second signal-multiplier 7 in the circuit of the base of the bipolar transistor 5 current flows

6 -, (O

where Up, y is the voltage of the second signal

the factor, f, is the resistance of the current-limiting resistor 6. The current in the collector circuit of the bipolar transistor 5 (current generator) is equal to

iwug

- Ivug about

L5 YGchG5 - .KI;

(2)

one

R; - current gain factor of the bipolar transistor 5.

Through the field-effect transistor 1, connected by a drain to the collector of the bipolar transistor 5, a current flows, defined by the expression (2). The voltage drop across the field effect transistor 1 is

U. ,,. (3)

where R is the resistance of the channel of the transistor 1.

Since the resistance of the field-effect transistor channel is proportional to the voltage across the gate, i.e. the voltage of the first signal-factor, then the voltage at output 4, taking into account (1), (2) and (3), can be represented as.

Ueb, y Uev -Uftx, (A)

where CBH ;, is the voltage of the first signal of the sonnoiator.

31108469

Compared to the device, the prototype is simpler functional

type of proposed device for the scheme, and the accuracy of multiplying the multiplication of the stresses characterized is preserved.

Claims (1)

DEVICE FOR MOVING VOLTAGES, containing a current generator made on a bipolar transistor, and an element with controlled conductivity made on a field-effect transistor, a current-limiting resistor, the first output of which is connected to the base of the bipolar transistor. torus, the collector of which is connected to one electrode of the field-effect transistor, the second electrode of which is connected to the zero potential bus, the gate of the field-effect transistor is the input of the first multiplier signal, the emitter of the bipolar transistor is the input of the second factor signal, the collector of the bipolar transistor is the output of the device, characterized in that, in order to simplify while maintaining accuracy, the second terminal of the current-limiting resistor is connected to a zero potential bus. V