SU1108384A1 - Photothermoplastic material for recording data - Google Patents

Abstract

PHOTOTHERMOSH1ASTIC MATER1SH1 FOR RECORDING OF INFORMATION, consisting of a polymer substrate, an electrically conductive sublayer, an injection layer of selenium with tellurium and a photothermoplastic layer of poly-N-vinylcarbazole and a thermoplastic binder, which has been enlarged by an increase in the increase of polycarbazole; A layer of amorphous selenium TOL1TSINO 0.03-0.05 µm, located between the injected and photothermoplastic layers. (L with

Description

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The invention relates to photothermoplastic materials and can be used to record information in both conventional and holographic form.

A photothermoplastic material is known, which contains a miniature substrate, an electrically conductive layer, an amorphous selenium injection layer, and a 1P photothermoplastic layer.

The specified photothermoplastic material has a high electrophotographic sensitivity in the blue zone of the spectrum (120 M -J) and practically does not possess electrophotographic sensitivity in the red zone of the spectrum (0.01 M.

The closest to the invention is a photothermoplastic material containing a polyethylene terephtaptic substrate metallized with nickel, on which a powdery layer of amorphous selenium with tellurium additives of 7%, a volume of 2%, antimony 1% (total content of additives 10%) and a photothermoplastic layer represented a composition of poly-N-vinylcarbazole and a thermoplastic polymer 21.

Known photothermoplastic material has a high electrophotographic sensitivity in the blue (400) and in the red region of the spectrum (8). However, the diffraction efficiency of the recorded image on this material is lower than on other photothermoplastic materials.

The photothermoplastic material has an especially low diffraction efficiency at an AOO nm wavelength; it is at this wavelength that the photothermoplastic material has the maximum electrophotographic sensitivity. The low value of the diffraction efficiency makes it impossible to put into practice the high electrophotographic sensitivity of the material.

One of the most important parameters characterizing the quality of a holographic image on a photothermoptic material is the diffraction efficiency of a plane phase hologram, which can have a maximum value of 33.9%. Increasingly

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The diffraction efficiency, together with the increase in electrophotographic sensitivity, is the most important task in the extensive use of 5 photothermoplastic materials for various technical needs. The purpose of the invention is to increase the diffraction efficiency.

The goal is achieved by the fact that the photo10 thermoplastic material additionally contains an amorphous selenium layer with a thickness of 0.03-0.05 µm, located between the injection and photothermoplastic layers.

The material obtained has a high diffraction efficiency at wavelengths of laser radiation of 633 and 441 nm, as well as high electrographic sensitivity.

20 Example I. A 0.15 µm-thick injection layer of amorphous selenium with additives,%, was vacuum deposited onto a nickel-metallized polyethylene terephthalate base:

25 tellurium 7; mouse to 2 and antimony 1. Additives do not exceed 10%. Then a photothermoplastic composition of poly-K-vinyl 3Q carbazole and a styrene-butadiene copolymer was applied from the solution in toluene using the bathing roller in a 1: 1 ratio. The polymer coating thickness after drying is 2 microns.

The diffraction efficiency at wavelengths of 441 and 633 nm for the optimal frequency of 200 mm is shown in the table. The table also shows the electrophotographic sensitivity according to the criterion of the decrease in the initial potential by 0.1.

Example 2. A nickel-plated polyethylene terephthalate base was vacuum-deposited an injection layer of amorphous selenium with the addition of 10% tellurium 0.15 µm thick, an amorphous selenium layer 0.03 µm thick. Then, a photothermoplastic composition containing 1% K-vinylcarbazole and a styrene-butadiene copolymer in a 1: 1 ratio, 2 µm thick, was applied from a solution in toluene using the bathing roller method.

Sensitometric characteristics are shown in the table.

5 Example 3. A photothermoplastic material is prepared as in Example 2, but the thickness of the amorphous selenium layer is 0.05 µm.

Sensitometric characteristics are shown in the table.

Example 4. A photothermoplastic material is prepared as in Example 2, but the thickness of the amorphous selenium layer is 0.02 µm.

Sensitometric characteristics are shown in the table.

Example 5. A photothermoplastic material was prepared as in Example 2, but the thickness of the amorphous selenium layer was 0.10 µm.

Sensitometric characteristics are shown in the table.

It follows from the above data that the proposed photothermoplastic material with a thickness of 0.03-0.05 µm amorphous selenium layer (examples 2 and 3) exceeds the diffraction efficiency at the laser radiation wavelength of 633 nm by 18–22% and at a wavelength of 441 nm more than 200%. At the same time, electrophotographic sensitivity practically remains at the level of the prototype.

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Claims (1)

PHOTOTHERMOSHASTIC MATERIAL FOR RECORDING INFORMATION, consisting of a polymer substrate, an electrically conductive sublayer, an injection layer of selenium with tellurium and a photothermoplastic layer of poly-N-vinylcarbazole and a thermoplastic binder, characterized in that, in order to increase the diffraction layer of amorphous, the material additionally 0.03-0.05 microns thick, located between the injection and photothermoplastic layers. I 108384