SU1057575A1 - Solution for pickling aluminium - Google Patents

Abstract

SOLUTION FOR POISONING. A LUM The line L containing ortofosforauyu kispotu, kisgyutu nitric, acetic kyopotu, sucrose, wetting agent CB-.1017 and y of about tpichayuschnys Ggem that with increasing aepyu shorter travpenv minute while maintaining properties aaschityuy mask aopopnitepvo it comprises at meo sertokispuyu The following is the ratio of ingredients, wt.%: orthophosphoric 78,140-86,322 at a rate of 7O% of nitrogen kiopot 2,787-3,956 1OO% of acetic acid 3,387-3,966 Sucrose 1.O36-1.9bv Wetting procession EH-1017 0.002-0.030 Honeyeast-grade Gray-grade-300 0.540-5.937 Water Else

Description

He ate he ate. The invention relates to the trapping of metapps by chemical means. Known solution dp bieste.thh & Aluminum alloy fines containing rthophosphoric and nitric acid boilers, triazine compounds, copper sulfate copper oxide and apcmini phosphate (ij, However, this solution cannot be applied to precision dP: trapsh because of its aggressiveness (the solution is disguised by the mask handles of the mask properties), poorly reproduced; Unstable composition (at 110 ° C, there is intense evaporation of water and volatilization of H, t (0). In addition, the solution has a very high rate of etching, which inevitably contributes to uneven 4.0 microns to the lateral subtrays under the mask. The closest to that proposed by the technical essence and the effect achieved is an etching solution containing, in wt.%: orthophosphoric acid 84.629, nitric acid 4,393, acetic acid 3,266, sucrose 1,400, wetting agent (CB-1O17) 0.09 O, water is the rest. And tervap working temperatures 55 However, the known solution is characterized by a low etching rate of 0.120, 19 µm / min with and STRONG gas extraction, which causes the dissolution process in the etched areas aluminum and - non-torn areas remain. , Etching the remaining portions of cypress causes a reduction in the cross-section of the current-carrying interconnects. The purpose of the invention is to increase the etching rate while maintaining the properties of the protective mask. This chain is achieved by the fact that jiacTBbp dp is etched in a wristband, orthophosphoric acid, nitric acid, acetic acid, sucrose, wetting agent and water, additionally contains copper sulphate when it follows a corresponding ratio; Dientov, wt.%: 85% orthophos78, 140-86,322 formic acid, 70% nitrogen 2,787-3.956 KSpot 100% vinegar 3, .966 acid 1,036-1,966 Sucrose Wetting suspension, O02-O, OZO in CB -1017 1 7S. Copper, sulfuric acid 0.540-5.937 OcTaiibHoe In the proposed Cu solution, not only accelerates the aluminum dissolution process, but, most importantly, blocks gas evolution, the absence of gas emission (Hj) is the basis of precision etching. The hydrocarbon (sucrose) in the solution is a complexing agent. It forms with complex copper ions: complexes, in the process of etching on the more negative surface (AK), copper is released. The solution for pickling of apimini is prepared by mixing the compounds before their complete dissolution and is used in a wide temperature range of 40-90 ° C. Example. With the ratio of ingredients in solution, wt.%: Orthophosphoic acid 86.322, nitric acid 1 2.787, acetic acid 3.966, sucrose 1.036, neutralizer substance CB-1O17 0, OO2, water 5.347, sulfuric acid copper 0.54O casqpocTb etching chlorine , 5-O, 6 µm / min, 0.9–1.3 µm under photoresist, willow gas release. Increasing the concentration of nitric acid increases the subtrain by the photoresist, and the rate of etching decreases. The oxidation step is difficult. With a decrease in the concentration of acetic acid, the withdrawal of prod: yaktov reaction is insufficient, the etching rate is 1 nok. When reducing the concentration of sucrose undergravings under the mask of age. When the concentration of the wetting substance decreases, the etching of the aluminum is uneven, the solution is hardly washed off. With a decrease in the copper sulfate concentration, the etching rate is less than O, 1 μm / min, the gas evolution is strong. Example 2. When the ratio of ingredients in solution / wt.%: Orthophospho {acid 78.14, nitric acid 3.956, acetic acid 3,387, sucrose 1, wettable substance O, 030, lyo 6.584, copper sulfate 5,937 etching rate is 0, 70, 9 mkm / min, podtrav under the photoresist. 03-1.0 microns. gas release is negligible. With an increase in the concentration of nitric acid, the oxidation of the masking agent increases in the cellar, and the mask is increased by the mask. At higher concentrations of acetic acid, the rate of withdrawal of the reaction products increases (the adhesion of the penquins breaks). With an increased concentration of sucrose in solution, a black-brown precipitate forms in the solution, and with

an increase in the concentration of wetting substances Penits solution.

Example 3. When the ratio of ingredients in solution, wt.%: Orthophosphoric acid 81,738, nitric acid 4,156, acetic acid 3, O87, sucrose 1,306, wetting agent 0,027, water 5,937, copper sulfate 3,749 podtrav under photoresist does not exceed

0.8-1.0 μm, etching rate O, 60, 7 μm / min. In solution, the dependence of the etching rate of aluminum on the concentration of copper and on temperature is considered.

The dependence of the rate of etching Apyumin on the concentration of copper sulfate at different temperatures are given in table. one.

Table 1

 wt.% CU5O4 5H2O prototype As seen from tabi. 1 aluminum trawling speed is high О 09-4,7О microns / min. The etching process along the perimeter of the underpass is evenly accompanied by moderate gas extraction. The loose water without any difficulty in coming from the surface in the form of small 1110, which ensures a high opvolume of the etching process. The optical temperature transitions in the interior are 40–9 ° C. When the temperature is low, the rate of dissolution of aluminum is low, the use of such temnefKiTyp is inconsistent, above 90 ° C, the speed of the trap is high, the BQCTH corpse appears, and the optimum trap time is selected, Yarrowed out a strong evaporation of the solution. The open-pit copper range and copper sulfate is ban 0.540-5.937 wt%. With a content of less than 0.540 wt.% Copper sulphate in the solution, the etching rate of apcmini is low, the gas depression is large, 5.937 wt.% Copper sulphate is the maximum soluble amount of ri in the solution. With the introduction of copper ions into the composition of the acidic solution, the relative position of the metal in the port in the voltage range changes in comparison with the aqueous solution. In this case, the potentials of copper and hydrogen release are almost the same. Hydrogen begins to be released along with copper, so the amount of hydrogen is reduced and its bubbles are crushed. This directly facilitates the etching process, the speed of which increases. Unseparated areas are not observed, chemical dissolution of aluminum over the entire surface takes place evenly, for a short time trapping

Do not violate & masking properties of photoresist. Traverse speed µm / min Dimensional care when trappevium, µm V o to genus

The effect on the protective deteriorates the protective properties of the masked foam

OrcjrrcTByeT

Copper removal

.S resistive removal in 15 min mask

Textile-9 Voyage indicators of the proposed solution: the solution allows for local; etching of aluminum (speed, herd penis is 0.6-O; 9 µm / m1; etching is accompanied by insignificant gas peevy; in places free from a mask , an excess of 15 mUA of unseparated areas is not observed. But in addition, an additional operation is introduced for removing meps in nitric acid after aluminum etching.

A comparison of the technical characteristics of the prototype and the invention is given in Table. 2

table 2

The effect is not observed - a short time, g aly (1.5-2min), slight gas deprivation, process uniformity

Removed in 3-5 seconds, oxidized

Regulatory mask.

Removes in 10 minutes (oxide photoresist dissolves in dimethylformamide at a higher rate)

Thus, trapping in the proposed solution allows an increase in the rate of etching while maintaining the properties of the mask, i.e. The positive properties of the predicted solution allow t to produce a mask with the topological image specified with a mask in a very short time. This makes (the process of etching is high-performance and high-quality, which is necessary in the production of IC and LSI. G 0.12 - 0.19 1 - 1.3 Bubbles are well moistened according to Po; the surface is apyumini ppoho smaunimi apyumini surfaced with hydrogen, etchanting access ethereal , the pickling goes easily into the reaction uneven season, the etching is uniform 0,09 - 4,7О 0,8 - 1

Claims (2)

2. US patent No. 3700508, kp. £ 23 P i / 02, ’published. 1972. (541 ETCHING SOLUTION. ALIUM INIA? Containing orthophosphoric acid, nitric acid, acetic Kyoto, sucrose, wetting agent CB-1017 and water, which is typical of Gtme, which, with a chain of increasing the etching rate while maintaining the properties of the protective mask , it additionally contains copper sulfate in the following ratio of ingredients, wt.%: 85% phosphoric acid 70% nitric acid 100% acetic acid Sucrose Wetting Agent SV-1017 Copper sulfate Water 78,140-86,322 2,787-3,956 3,387-3,966 1,036-1,966 0.002-0.030 0.540-5.937 Rest e