SG71037A1 - Inorganic seal for encapsulation of an organic layer and method for making the same - Google Patents

Inorganic seal for encapsulation of an organic layer and method for making the same

Info

Publication number
SG71037A1
SG71037A1 SG1997002882A SG1997002882A SG71037A1 SG 71037 A1 SG71037 A1 SG 71037A1 SG 1997002882 A SG1997002882 A SG 1997002882A SG 1997002882 A SG1997002882 A SG 1997002882A SG 71037 A1 SG71037 A1 SG 71037A1
Authority
SG
Singapore
Prior art keywords
encapsulation
making
same
organic layer
inorganic seal
Prior art date
Application number
SG1997002882A
Other languages
English (en)
Inventor
John Edward Cronin
Barbara Jean Luther
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG71037A1 publication Critical patent/SG71037A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
SG1997002882A 1996-10-03 1997-08-08 Inorganic seal for encapsulation of an organic layer and method for making the same SG71037A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/724,877 US5861658A (en) 1996-10-03 1996-10-03 Inorganic seal for encapsulation of an organic layer and method for making the same

Publications (1)

Publication Number Publication Date
SG71037A1 true SG71037A1 (en) 2000-03-21

Family

ID=24912291

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997002882A SG71037A1 (en) 1996-10-03 1997-08-08 Inorganic seal for encapsulation of an organic layer and method for making the same

Country Status (6)

Country Link
US (2) US5861658A (zh)
JP (1) JPH10112459A (zh)
KR (1) KR100257429B1 (zh)
CN (1) CN1110855C (zh)
MY (1) MY115683A (zh)
SG (1) SG71037A1 (zh)

Families Citing this family (33)

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WO2001006253A2 (en) 1999-07-16 2001-01-25 Board Of Regents, The University Of Texas System Detection system based on an analyte reactive particle
US6866901B2 (en) 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US20100330748A1 (en) 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US7198832B2 (en) * 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
AU2001234709A1 (en) * 2000-01-31 2001-08-07 Board Of Regents, The University Of Texas System Method of preparing a sensor array
US7746496B2 (en) * 2000-03-28 2010-06-29 Mongonet Method and system for pay per use document transfer via computer network transfer protocols
US7439096B2 (en) * 2001-02-21 2008-10-21 Lucent Technologies Inc. Semiconductor device encapsulation
JP4118029B2 (ja) * 2001-03-09 2008-07-16 富士通株式会社 半導体集積回路装置とその製造方法
US8808457B2 (en) 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
EP1502097A2 (en) 2002-04-26 2005-02-02 Board of Regents, The University of Texas System Method and system for the detection of cardiac risk factors
JP4088120B2 (ja) * 2002-08-12 2008-05-21 株式会社ルネサステクノロジ 半導体装置
US7585546B2 (en) * 2003-08-11 2009-09-08 Finisar Corporation Surface passivation and sealing of micro-optics devices for improved performance in harsh environments
US7098544B2 (en) * 2004-01-06 2006-08-29 International Business Machines Corporation Edge seal for integrated circuit chips
US20050181535A1 (en) * 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
US8105849B2 (en) 2004-02-27 2012-01-31 Board Of Regents, The University Of Texas System Integration of fluids and reagents into self-contained cartridges containing sensor elements
US8101431B2 (en) 2004-02-27 2012-01-24 Board Of Regents, The University Of Texas System Integration of fluids and reagents into self-contained cartridges containing sensor elements and reagent delivery systems
US7566634B2 (en) * 2004-09-24 2009-07-28 Interuniversitair Microelektronica Centrum (Imec) Method for chip singulation
CA2610793A1 (en) 2005-05-31 2007-05-10 Labnow, Inc. Methods and compositions related to determination and use of white blood cell counts
US7767498B2 (en) 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US7893459B2 (en) * 2007-04-10 2011-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Seal ring structures with reduced moisture-induced reliability degradation
JP5448304B2 (ja) * 2007-04-19 2014-03-19 パナソニック株式会社 半導体装置
US9184410B2 (en) 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US9337446B2 (en) 2008-12-22 2016-05-10 Samsung Display Co., Ltd. Encapsulated RGB OLEDs having enhanced optical output
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US7897433B2 (en) * 2009-02-18 2011-03-01 Advanced Micro Devices, Inc. Semiconductor chip with reinforcement layer and method of making the same
US8590338B2 (en) * 2009-12-31 2013-11-26 Samsung Mobile Display Co., Ltd. Evaporator with internal restriction
US8058108B2 (en) 2010-03-10 2011-11-15 Ati Technologies Ulc Methods of forming semiconductor chip underfill anchors
CN102637612B (zh) * 2012-05-03 2014-07-30 福建华映显示科技有限公司 固设半导体芯片于线路基板的方法及其结构
US9105531B2 (en) * 2012-07-19 2015-08-11 Renesas Electronics Corporation Semiconductor device
KR102450399B1 (ko) 2015-10-06 2022-09-30 삼성전자주식회사 박막 트랜지스터, 그 제조 방법, 그리고 상기 박막 트랜지스터를 포함하는 전자 장치
JP2017163072A (ja) * 2016-03-11 2017-09-14 パナソニックＩｐマネジメント株式会社 素子チップおよびその製造方法
WO2017174608A1 (en) 2016-04-06 2017-10-12 Abb Schweiz Ag Semiconductor chip with moisture protection layer
CN110010508A (zh) * 2019-04-10 2019-07-12 深圳市锐骏半导体股份有限公司 一种解决钝化层对功率器件可靠性影响的方法

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US4495220A (en) * 1983-10-07 1985-01-22 Trw Inc. Polyimide inter-metal dielectric process
US4692786A (en) * 1985-02-07 1987-09-08 Lindenfelser Timothy M Semi-conductor device with sandwich passivation coating
US5126290A (en) * 1991-09-11 1992-06-30 Micron Technology, Inc. Method of making memory devices utilizing one-sided ozone teos spacers
US5294295A (en) * 1991-10-31 1994-03-15 Vlsi Technology, Inc. Method for moisture sealing integrated circuits using silicon nitride spacer protection of oxide passivation edges
US5472900A (en) * 1991-12-31 1995-12-05 Intel Corporation Capacitor fabricated on a substrate containing electronic circuitry
FR2687012A1 (fr) * 1992-02-03 1993-07-30 France Telecom Dispositif josephson et son procede de fabrication.
US5356834A (en) * 1992-03-24 1994-10-18 Kabushiki Kaisha Toshiba Method of forming contact windows in semiconductor devices
US5284801A (en) * 1992-07-22 1994-02-08 Vlsi Technology, Inc. Methods of moisture protection in semiconductor devices utilizing polyimides for inter-metal dielectric

Also Published As

Publication number Publication date
US5854141A (en) 1998-12-29
MY115683A (en) 2003-08-30
CN1190796A (zh) 1998-08-19
KR19980032241A (ko) 1998-07-25
US5861658A (en) 1999-01-19
KR100257429B1 (ko) 2000-05-15
CN1110855C (zh) 2003-06-04
JPH10112459A (ja) 1998-04-28

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