SG61893G - Forming tungsten structures - Google Patents

Forming tungsten structures

Info

Publication number
SG61893G
SG61893G SG61893A SG61893A SG61893G SG 61893 G SG61893 G SG 61893G SG 61893 A SG61893 A SG 61893A SG 61893 A SG61893 A SG 61893A SG 61893 G SG61893 G SG 61893G
Authority
SG
Singapore
Prior art keywords
forming tungsten
tungsten structures
structures
forming
tungsten
Prior art date
Application number
SG61893A
Other languages
English (en)
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of SG61893G publication Critical patent/SG61893G/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
SG61893A 1987-06-12 1993-05-10 Forming tungsten structures SG61893G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6226187A 1987-06-12 1987-06-12

Publications (1)

Publication Number Publication Date
SG61893G true SG61893G (en) 1993-07-09

Family

ID=22041302

Family Applications (1)

Application Number Title Priority Date Filing Date
SG61893A SG61893G (en) 1987-06-12 1993-05-10 Forming tungsten structures

Country Status (5)

Country Link
EP (1) EP0295135B1 (xx)
JP (1) JP2585064B2 (xx)
DE (1) DE3878996T2 (xx)
HK (1) HK77093A (xx)
SG (1) SG61893G (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0372836A3 (en) * 1988-12-09 1991-07-31 AT&T Corp. Etching of integrated-circuit device metallization and resulting device
US5338702A (en) * 1993-01-27 1994-08-16 International Business Machines Corporation Method for fabricating tungsten local interconnections in high density CMOS
US5439847A (en) * 1993-11-05 1995-08-08 At&T Corp. Integrated circuit fabrication with a raised feature as mask
US5882992A (en) * 1994-08-25 1999-03-16 International Business Machines Corporation Method for fabricating Tungsten local interconnections in high density CMOS circuits
JPH08186120A (ja) * 1994-12-28 1996-07-16 Nec Corp 半導体装置の製造方法
JP4913345B2 (ja) * 2004-01-26 2012-04-11 株式会社ミツトヨ 反射型光電式エンコーダ用スケール、スケールの製造方法及び光電式エンコーダ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289834A (en) * 1977-10-20 1981-09-15 Ibm Corporation Dense dry etched multi-level metallurgy with non-overlapped vias

Also Published As

Publication number Publication date
JPS6413741A (en) 1989-01-18
EP0295135A1 (en) 1988-12-14
DE3878996D1 (de) 1993-04-15
EP0295135B1 (en) 1993-03-10
HK77093A (en) 1993-08-06
JP2585064B2 (ja) 1997-02-26
DE3878996T2 (de) 1993-10-07

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