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Priority to SG200708781-0ApriorityCriticalpatent/SG169232A1/en
Publication of SG169232A1publicationCriticalpatent/SG169232A1/en
Semiconductor device comprising substrate having perovskite structure and III-V nitride epilayer provided on the substrate and semiconductor device comprising substrate selected from a group consisting of SeCoO3, SeNiO3, SeMnO3, TeCoO3, TeNiO3, TeMnO3, SeZnO3, SeCuO3 and SeMgO3, and a III-V nitride epilayer provided on the substrate.
SG200708781-0A2003-03-142003-03-14Substrate for growing a iii-v nitride epilayer and method for selecting the same
SG169232A1
(en)
VAPOR PHASE GROWTH METHOD FOR Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR, AND METHOD AND DEVICE FOR PRODUCING Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR
Group III nitride semiconductor crystal and manufacturing method of the same, group III nitride semiconductor device and manufacturing method of the same, and light emitting device