SG169232A1 - Substrate for growing a iii-v nitride epilayer and method for selecting the same - Google Patents

Substrate for growing a iii-v nitride epilayer and method for selecting the same

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Publication number
SG169232A1
SG169232A1 SG200708781-0A SG2007087810A SG169232A1 SG 169232 A1 SG169232 A1 SG 169232A1 SG 2007087810 A SG2007087810 A SG 2007087810A SG 169232 A1 SG169232 A1 SG 169232A1
Authority
SG
Singapore
Prior art keywords
substrate
iii
growing
selecting
same
Prior art date
Application number
SG200708781-0A
Inventor
Wu Ping
Jin Hong Mei
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Priority to SG200708781-0A priority Critical patent/SG169232A1/en
Publication of SG169232A1 publication Critical patent/SG169232A1/en

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Abstract

Semiconductor device comprising substrate having perovskite structure and III-V nitride epilayer provided on the substrate and semiconductor device comprising substrate selected from a group consisting of SeCoO3, SeNiO3, SeMnO3, TeCoO3, TeNiO3, TeMnO3, SeZnO3, SeCuO3 and SeMgO3, and a III-V nitride epilayer provided on the substrate.
SG200708781-0A 2003-03-14 2003-03-14 Substrate for growing a iii-v nitride epilayer and method for selecting the same SG169232A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200708781-0A SG169232A1 (en) 2003-03-14 2003-03-14 Substrate for growing a iii-v nitride epilayer and method for selecting the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200708781-0A SG169232A1 (en) 2003-03-14 2003-03-14 Substrate for growing a iii-v nitride epilayer and method for selecting the same

Publications (1)

Publication Number Publication Date
SG169232A1 true SG169232A1 (en) 2011-03-30

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ID=43875186

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200708781-0A SG169232A1 (en) 2003-03-14 2003-03-14 Substrate for growing a iii-v nitride epilayer and method for selecting the same

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Country Link
SG (1) SG169232A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1108805A1 (en) * 1999-12-17 2001-06-20 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US20020028314A1 (en) * 1994-01-27 2002-03-07 Tischler Michael A. Bulk single crystal gallium nitride and method of making same
WO2003009344A2 (en) * 2001-07-16 2003-01-30 Motorola, Inc. Iii-v arsenide nitride semiconductor substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020028314A1 (en) * 1994-01-27 2002-03-07 Tischler Michael A. Bulk single crystal gallium nitride and method of making same
EP1108805A1 (en) * 1999-12-17 2001-06-20 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
WO2003009344A2 (en) * 2001-07-16 2003-01-30 Motorola, Inc. Iii-v arsenide nitride semiconductor substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHARACTERIZATION OF PEROVSKITE-TYPE OXIDE CATALYSTS RECOO3 BY TPR *
STUDY OF THE PREPARATION PROCESS OF PEROVSKITE OXIDES SMMNO3 BY XRD AND TPR TECHNIQUE *

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