SG160413A1 - Semiconductor processing apparatus - Google Patents

Semiconductor processing apparatus

Info

Publication number
SG160413A1
SG160413A1 SG201001856-2A SG2010018562A SG160413A1 SG 160413 A1 SG160413 A1 SG 160413A1 SG 2010018562 A SG2010018562 A SG 2010018562A SG 160413 A1 SG160413 A1 SG 160413A1
Authority
SG
Singapore
Prior art keywords
shield plate
angle
distance
along
perpendicularly
Prior art date
Application number
SG201001856-2A
Inventor
Sheng Lin
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG160413A1 publication Critical patent/SG160413A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Abstract

A semiconductor processing apparatus (116) comprises an inner sidewall (116d) and an outer sidewall (116b), both of which are in a cylindrical shape, a flange (116a) extending outwards from the outer sidewall, a shield plate (116c) between the inner sidewall and the outer sidewall, wherein the outer sidewall extends upwardly perpendicularly or along an angle from the upper surface of the flange for a first distance (116g) and extends downwards perpendicularly or along an angle from the shield plate for a second distance (116f); the inner sidewall extends upwardly perpendicularly or along an angle from the shield plate for a third distance and extends downwards perpendicularly or along an angle from the shield plate for a fourth distance (116e); the shield plate has a stepped structure, and rows of apertures (170) distributed uniformly are provided on an upper stepped surface and a lower stepped surface thereof.
SG201001856-2A 2006-10-20 2007-02-14 Semiconductor processing apparatus SG160413A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200610113918A CN101165868B (en) 2006-10-20 2006-10-20 Wafer processing chamber liner and wafer processing chamber comprising same

Publications (1)

Publication Number Publication Date
SG160413A1 true SG160413A1 (en) 2010-04-29

Family

ID=39324107

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201001856-2A SG160413A1 (en) 2006-10-20 2007-02-14 Semiconductor processing apparatus

Country Status (3)

Country Link
CN (1) CN101165868B (en)
SG (1) SG160413A1 (en)
WO (1) WO2008049290A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104916564B (en) * 2014-03-13 2018-01-09 北京北方华创微电子装备有限公司 Reaction chamber and plasma processing device
CN105097607B (en) * 2014-05-22 2019-02-19 北京北方华创微电子装备有限公司 A kind of reaction chamber and its cleaning method
CN108899295A (en) * 2018-07-06 2018-11-27 宁波江丰电子材料股份有限公司 Etching chamber and etching chamber processing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589737A (en) * 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6408786B1 (en) * 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
US6227140B1 (en) * 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US20050109276A1 (en) * 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber

Also Published As

Publication number Publication date
CN101165868B (en) 2010-05-12
WO2008049290A1 (en) 2008-05-02
CN101165868A (en) 2008-04-23

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