SG155149A1 - Sprayed si- or si:al-target with low iron content - Google Patents

Sprayed si- or si:al-target with low iron content

Info

Publication number
SG155149A1
SG155149A1 SG200901386-3A SG2009013863A SG155149A1 SG 155149 A1 SG155149 A1 SG 155149A1 SG 2009013863 A SG2009013863 A SG 2009013863A SG 155149 A1 SG155149 A1 SG 155149A1
Authority
SG
Singapore
Prior art keywords
target
sprayed
iron content
low iron
material layer
Prior art date
Application number
SG200901386-3A
Other languages
English (en)
Inventor
Roland Trassl
Wolf Fritsche
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG155149A1 publication Critical patent/SG155149A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/067—Metallic material containing free particles of non-metal elements, e.g. carbon, silicon, boron, phosphorus or arsenic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Photovoltaic Devices (AREA)
SG200901386-3A 2008-02-28 2009-02-26 Sprayed si- or si:al-target with low iron content SG155149A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3213908P 2008-02-28 2008-02-28
EP08152076A EP2096189A1 (en) 2008-02-28 2008-02-28 Sprayed Si- or Si:Al-target with low iron content

Publications (1)

Publication Number Publication Date
SG155149A1 true SG155149A1 (en) 2009-09-30

Family

ID=39563475

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200901386-3A SG155149A1 (en) 2008-02-28 2009-02-26 Sprayed si- or si:al-target with low iron content

Country Status (6)

Country Link
US (1) US8157975B2 (ja)
EP (1) EP2096189A1 (ja)
JP (1) JP2009215651A (ja)
CN (1) CN101519768A (ja)
SG (1) SG155149A1 (ja)
TW (1) TW200942629A (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1018999A5 (fr) * 2009-11-12 2011-12-06 Clavareau Guy Procede et dispositif pour la fabrication d'une cible de pulverisation cathodique magnetron.
CN101921988A (zh) * 2010-05-05 2010-12-22 广州市尤特新材料有限公司 一种硅基合金旋转靶材及其制备方法
EP2428994A1 (en) * 2010-09-10 2012-03-14 Applied Materials, Inc. Method and system for depositing a thin-film transistor
CN104775097B (zh) * 2014-09-15 2017-04-12 芜湖映日科技有限公司 一种低电阻率微硼掺杂旋转溅射硅靶材及其制备方法
CN106319431A (zh) * 2016-10-31 2017-01-11 芜湖映日科技有限公司 无芯轴靶材喷涂设备
CN109267019A (zh) * 2017-07-17 2019-01-25 宁波江丰电子材料股份有限公司 硅旋转靶材及其制备方法
BE1026850B1 (nl) * 2018-11-12 2020-07-07 Soleras Advanced Coatings Bv Geleidende sputter doelen met silicium, zirkonium en zuurstof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1007067A3 (nl) * 1992-07-15 1995-03-07 Emiel Vanderstraeten Besloten Sputterkathode en werkwijze voor het vervaardigen van deze kathode.
US5571393A (en) 1994-08-24 1996-11-05 Viratec Thin Films, Inc. Magnet housing for a sputtering cathode
US6475263B1 (en) * 2001-04-11 2002-11-05 Crucible Materials Corp. Silicon aluminum alloy of prealloyed powder and method of manufacture
WO2004016823A1 (ja) * 2002-08-12 2004-02-26 Nikko Materials Company, Limited シリコン基板又はシリコンスパッタリングターゲット及びこれらの製造方法
FR2881757B1 (fr) * 2005-02-08 2007-03-30 Saint Gobain Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium
DE502005000983D1 (de) 2005-05-13 2007-08-16 Applied Materials Gmbh & Co Kg Verfahren zum Betreiben einer Sputterkathode mit einem Target

Also Published As

Publication number Publication date
EP2096189A1 (en) 2009-09-02
TW200942629A (en) 2009-10-16
JP2009215651A (ja) 2009-09-24
US20090218213A1 (en) 2009-09-03
CN101519768A (zh) 2009-09-02
US8157975B2 (en) 2012-04-17

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