SG138597A1 - An improved cpl mask and a method and program product for generating the same - Google Patents
An improved cpl mask and a method and program product for generating the sameInfo
- Publication number
- SG138597A1 SG138597A1 SG200705081-8A SG2007050818A SG138597A1 SG 138597 A1 SG138597 A1 SG 138597A1 SG 2007050818 A SG2007050818 A SG 2007050818A SG 138597 A1 SG138597 A1 SG 138597A1
- Authority
- SG
- Singapore
- Prior art keywords
- generating
- improved
- same
- program product
- cpl mask
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81854406P | 2006-07-06 | 2006-07-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG138597A1 true SG138597A1 (en) | 2008-01-28 |
Family
ID=38461841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200705081-8A SG138597A1 (en) | 2006-07-06 | 2007-07-06 | An improved cpl mask and a method and program product for generating the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US7998355B2 (fr) |
EP (1) | EP1876494A1 (fr) |
JP (1) | JP4607151B2 (fr) |
KR (1) | KR100875232B1 (fr) |
CN (1) | CN101122736A (fr) |
SG (1) | SG138597A1 (fr) |
TW (1) | TW200809394A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101644889B (zh) * | 2009-06-24 | 2012-12-12 | 上海宏力半导体制造有限公司 | 用于提高焦深的光刻散射条及其制造方法 |
US9153399B2 (en) | 2013-11-15 | 2015-10-06 | Eaton Corporation | ARC baffling device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5446521A (en) * | 1993-06-30 | 1995-08-29 | Intel Corporation | Phase-shifted opaquing ring |
EP0674223B1 (fr) * | 1994-02-14 | 1997-05-02 | International Business Machines Corporation | Masque à décalage de phase atténuant et procédé de fabrication |
US5465859A (en) * | 1994-04-28 | 1995-11-14 | International Business Machines Corporation | Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique |
KR0170686B1 (ko) * | 1995-09-13 | 1999-03-20 | 김광호 | 하프톤 위상반전마스크의 제조방법 |
WO1997033205A1 (fr) | 1996-03-06 | 1997-09-12 | Philips Electronics N.V. | Systeme d'interferometre differentiel et dispositif lithographique a balayage par etapes pourvu d'un tel systeme |
WO1998028665A1 (fr) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Dispositif de positionnement bidimensionnellement equilibre a deux porte-objets, et dispositif lithographique comportant ledit dispositif |
US5935736A (en) * | 1997-10-24 | 1999-08-10 | Taiwan Semiconductors Manufacturing Company Ltd. | Mask and method to eliminate side-lobe effects in attenuated phase shifting masks |
KR100355228B1 (ko) * | 2000-01-18 | 2002-10-11 | 삼성전자 주식회사 | 하프톤 위상반전 마스크 및 그 제조방법 |
JP2002156741A (ja) * | 2000-11-16 | 2002-05-31 | Nec Corp | マスクのデバイスパターンの補正方法 |
US6387787B1 (en) * | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
US6635393B2 (en) | 2001-03-23 | 2003-10-21 | Numerical Technologies, Inc. | Blank for alternating PSM photomask with charge dissipation layer |
US6841310B2 (en) * | 2002-02-05 | 2005-01-11 | Micron Technology, Inc. | Radiation patterning tools, and methods of forming radiation patterning tools |
TWI274969B (en) * | 2002-09-11 | 2007-03-01 | Asml Masktools Bv | Method and computer program product of generating masks and mask generated thereby, device manufacturing method and device manufactured thereby, and method of printing pattern |
US7033947B2 (en) * | 2003-03-11 | 2006-04-25 | Taiwan Seminconductor Manufacturing Co Ltd | Dual trench alternating phase shift mask fabrication |
US6933084B2 (en) * | 2003-03-18 | 2005-08-23 | Photronics, Inc. | Alternating aperture phase shift photomask having light absorption layer |
KR100508093B1 (ko) * | 2003-06-05 | 2005-08-17 | 삼성전자주식회사 | 위상 반전 마스크 및 그 제조방법 |
JP3746497B2 (ja) | 2003-06-24 | 2006-02-15 | 松下電器産業株式会社 | フォトマスク |
US20060099519A1 (en) * | 2004-11-10 | 2006-05-11 | Moriarty Michael H | Method of depositing a material providing a specified attenuation and phase shift |
-
2007
- 2007-07-05 JP JP2007177256A patent/JP4607151B2/ja not_active Expired - Fee Related
- 2007-07-05 CN CNA2007101494530A patent/CN101122736A/zh active Pending
- 2007-07-05 EP EP07252695A patent/EP1876494A1/fr not_active Withdrawn
- 2007-07-06 TW TW096124749A patent/TW200809394A/zh unknown
- 2007-07-06 US US11/822,538 patent/US7998355B2/en not_active Expired - Fee Related
- 2007-07-06 KR KR1020070068052A patent/KR100875232B1/ko not_active IP Right Cessation
- 2007-07-06 SG SG200705081-8A patent/SG138597A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN101122736A (zh) | 2008-02-13 |
JP2008015534A (ja) | 2008-01-24 |
JP4607151B2 (ja) | 2011-01-05 |
US20080067143A1 (en) | 2008-03-20 |
EP1876494A1 (fr) | 2008-01-09 |
US7998355B2 (en) | 2011-08-16 |
TW200809394A (en) | 2008-02-16 |
KR20080005138A (ko) | 2008-01-10 |
KR100875232B1 (ko) | 2008-12-19 |
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