SG11202111745YA - Metal removal method, dry etching method, and production method for semiconductor element - Google Patents
Metal removal method, dry etching method, and production method for semiconductor elementInfo
- Publication number
- SG11202111745YA SG11202111745YA SG11202111745YA SG11202111745YA SG11202111745YA SG 11202111745Y A SG11202111745Y A SG 11202111745YA SG 11202111745Y A SG11202111745Y A SG 11202111745YA SG 11202111745Y A SG11202111745Y A SG 11202111745YA SG 11202111745Y A SG11202111745Y A SG 11202111745YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor element
- dry etching
- metal removal
- production
- production method
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 238000001312 dry etching Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019092401 | 2019-05-15 | ||
PCT/JP2020/016929 WO2020230522A1 (en) | 2019-05-15 | 2020-04-17 | Metal removal method, dry etching method, and production method for semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202111745YA true SG11202111745YA (en) | 2021-11-29 |
Family
ID=73288954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202111745YA SG11202111745YA (en) | 2019-05-15 | 2020-04-17 | Metal removal method, dry etching method, and production method for semiconductor element |
Country Status (9)
Country | Link |
---|---|
US (1) | US20220325418A1 (en) |
EP (1) | EP3971322A4 (en) |
JP (1) | JP7396355B2 (en) |
KR (1) | KR20210139395A (en) |
CN (1) | CN113728126A (en) |
IL (1) | IL287669A (en) |
SG (1) | SG11202111745YA (en) |
TW (1) | TWI793417B (en) |
WO (1) | WO2020230522A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220050175A (en) * | 2019-11-19 | 2022-04-22 | 쇼와 덴코 가부시키가이샤 | Adhesive removal method and film formation method |
US11955430B2 (en) * | 2021-03-31 | 2024-04-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device and semiconductor devices |
CN117461117A (en) * | 2021-06-09 | 2024-01-26 | 株式会社力森诺科 | Dry etching method, method for manufacturing semiconductor element, and cleaning method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2720966B2 (en) * | 1987-07-13 | 1998-03-04 | セントラル硝子株式会社 | Recycling method of parts with thin film attached |
GB2322235B (en) * | 1995-10-19 | 2000-09-27 | Massachusetts Inst Technology | Metals removal process |
KR100228487B1 (en) | 1997-06-26 | 1999-11-01 | 윤종용 | Settop box with a pager function therein and method of controlling the same |
JP2004228487A (en) * | 2003-01-27 | 2004-08-12 | Matsushita Electric Ind Co Ltd | Dry etching method |
US20060016783A1 (en) * | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
SG171606A1 (en) * | 2006-04-26 | 2011-06-29 | Advanced Tech Materials | Cleaning of semiconductor processing systems |
US9972504B2 (en) * | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US10096487B2 (en) * | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
JP6777851B2 (en) * | 2015-09-15 | 2020-10-28 | セントラル硝子株式会社 | Dry etching method, semiconductor device manufacturing method and chamber cleaning method |
US10648087B2 (en) * | 2015-11-10 | 2020-05-12 | L'Air Liquide, SociétéAnonyme pour l'Exploitation et l'Etude des Procédés Georges Claude | Etching reactants and plasma-free etching processes using the same |
CN110050331B (en) * | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | Thermal atomic layer etching process |
JP7053991B2 (en) * | 2017-03-28 | 2022-04-13 | セントラル硝子株式会社 | Dry etching method, semiconductor device manufacturing method and chamber cleaning method |
JP6772117B2 (en) * | 2017-08-23 | 2020-10-21 | 株式会社日立ハイテク | Etching method and etching equipment |
US11715643B2 (en) * | 2019-07-18 | 2023-08-01 | Tokyo Electron Limited | Gas phase etch with controllable etch selectivity of metals |
-
2020
- 2020-04-17 EP EP20805168.0A patent/EP3971322A4/en active Pending
- 2020-04-17 CN CN202080031010.5A patent/CN113728126A/en active Pending
- 2020-04-17 JP JP2021519319A patent/JP7396355B2/en active Active
- 2020-04-17 WO PCT/JP2020/016929 patent/WO2020230522A1/en unknown
- 2020-04-17 KR KR1020217033503A patent/KR20210139395A/en not_active IP Right Cessation
- 2020-04-17 US US17/607,933 patent/US20220325418A1/en active Pending
- 2020-04-17 SG SG11202111745YA patent/SG11202111745YA/en unknown
- 2020-05-04 TW TW109114743A patent/TWI793417B/en active
-
2021
- 2021-10-28 IL IL287669A patent/IL287669A/en unknown
Also Published As
Publication number | Publication date |
---|---|
IL287669A (en) | 2021-12-01 |
EP3971322A1 (en) | 2022-03-23 |
JPWO2020230522A1 (en) | 2020-11-19 |
KR20210139395A (en) | 2021-11-22 |
WO2020230522A1 (en) | 2020-11-19 |
TWI793417B (en) | 2023-02-21 |
US20220325418A1 (en) | 2022-10-13 |
JP7396355B2 (en) | 2023-12-12 |
CN113728126A (en) | 2021-11-30 |
EP3971322A4 (en) | 2022-07-27 |
TW202105500A (en) | 2021-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL287669A (en) | Metal removal method, dry etching method, and production method for semiconductor element | |
GB201801337D0 (en) | Method for etching a semiconductor structure | |
EP3376525A4 (en) | Method for manufacturing group iii nitride semiconductor substrate, and group iii nitride semiconductor substrate | |
SG10202004731SA (en) | Semiconductor die, semiconductor wafer, semiconductor device including the semiconductor die and method of manufacturing the semiconductor device | |
SG11202109419WA (en) | Dry etching method, method for manufacturing semiconductor device, and etching device | |
SG10201907085QA (en) | Semiconductor substrate processing method | |
SG10202006736YA (en) | Wafer processing method | |
SG10202000576QA (en) | Wafer processing method | |
IL274331A (en) | Etching method and semiconductor manufacturing method | |
GB201811873D0 (en) | Semiconductor etching methods | |
SG10202004876YA (en) | Wafer processing method | |
EP3904825A4 (en) | Semiconductor wafer evaluation method and semiconductor wafer production method | |
SG10201912832SA (en) | Wafer processing method | |
SG11201908162RA (en) | Method for manufacturing wafer | |
SG10202009952SA (en) | Wafer processing method | |
SG11202109169TA (en) | Dry etching method and method for producing semiconductor device | |
SG10202003482RA (en) | Wafer processing method | |
SG10202002647RA (en) | Wafer processing method | |
SG10202000574XA (en) | Wafer processing method | |
SG10202010592VA (en) | Wafer processing method | |
SG10202009948YA (en) | Wafer processing method | |
SG10202009949PA (en) | Wafer processing method | |
SG10202009268SA (en) | Wafer processing method | |
SG10202008571TA (en) | Wafer processing method | |
SG10202005660XA (en) | Wafer processing method |