SG11202109797SA - Apparatus for cleaning plasma chambers - Google Patents

Apparatus for cleaning plasma chambers

Info

Publication number
SG11202109797SA
SG11202109797SA SG11202109797SA SG11202109797SA SG 11202109797S A SG11202109797S A SG 11202109797SA SG 11202109797S A SG11202109797S A SG 11202109797SA SG 11202109797S A SG11202109797S A SG 11202109797SA
Authority
SG
Singapore
Prior art keywords
plasma chambers
cleaning plasma
cleaning
chambers
plasma
Prior art date
Application number
Other languages
English (en)
Inventor
Adrien Lavoie
Pulkit Agarwal
Frank Loren Pasquale
Purushottam Kumar
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11202109797SA publication Critical patent/SG11202109797SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG11202109797S 2019-03-11 2020-03-06 Apparatus for cleaning plasma chambers SG11202109797SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962816820P 2019-03-11 2019-03-11
PCT/US2020/021385 WO2020185557A1 (en) 2019-03-11 2020-03-06 Apparatus for cleaning plasma chambers

Publications (1)

Publication Number Publication Date
SG11202109797SA true SG11202109797SA (en) 2021-10-28

Family

ID=72426767

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202109797S SG11202109797SA (en) 2019-03-11 2020-03-06 Apparatus for cleaning plasma chambers

Country Status (7)

Country Link
US (1) US20220181128A1 (ko)
JP (1) JP2022525085A (ko)
KR (1) KR20210127259A (ko)
CN (1) CN113597479A (ko)
SG (1) SG11202109797SA (ko)
TW (1) TW202102714A (ko)
WO (1) WO2020185557A1 (ko)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661093A (en) * 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
JP5897617B2 (ja) * 2014-01-31 2016-03-30 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US9617638B2 (en) * 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US10157755B2 (en) * 2015-10-01 2018-12-18 Lam Research Corporation Purge and pumping structures arranged beneath substrate plane to reduce defects
US9738977B1 (en) * 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
US10403474B2 (en) * 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system

Also Published As

Publication number Publication date
WO2020185557A1 (en) 2020-09-17
TW202102714A (zh) 2021-01-16
US20220181128A1 (en) 2022-06-09
KR20210127259A (ko) 2021-10-21
JP2022525085A (ja) 2022-05-11
CN113597479A (zh) 2021-11-02

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