SG11202107900VA - Method for pulling a cylindrical crystal from a melt - Google Patents

Method for pulling a cylindrical crystal from a melt

Info

Publication number
SG11202107900VA
SG11202107900VA SG11202107900VA SG11202107900VA SG11202107900VA SG 11202107900V A SG11202107900V A SG 11202107900VA SG 11202107900V A SG11202107900V A SG 11202107900VA SG 11202107900V A SG11202107900V A SG 11202107900VA SG 11202107900V A SG11202107900V A SG 11202107900VA
Authority
SG
Singapore
Prior art keywords
melt
pulling
cylindrical crystal
crystal
cylindrical
Prior art date
Application number
SG11202107900VA
Other languages
English (en)
Inventor
Andreas Mühe
Original Assignee
Pva Tepla Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pva Tepla Ag filed Critical Pva Tepla Ag
Publication of SG11202107900VA publication Critical patent/SG11202107900VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202107900VA 2019-01-28 2020-01-24 Method for pulling a cylindrical crystal from a melt SG11202107900VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019101991.5A DE102019101991A1 (de) 2019-01-28 2019-01-28 Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze
PCT/DE2020/200007 WO2020156621A1 (de) 2019-01-28 2020-01-24 Verfahren zum ziehen eines zylindrischen kristalls aus einer schmelze

Publications (1)

Publication Number Publication Date
SG11202107900VA true SG11202107900VA (en) 2021-08-30

Family

ID=69740080

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202107900VA SG11202107900VA (en) 2019-01-28 2020-01-24 Method for pulling a cylindrical crystal from a melt

Country Status (11)

Country Link
US (1) US11965267B2 (de)
EP (1) EP3918116B1 (de)
JP (1) JP2022518921A (de)
KR (1) KR102698437B1 (de)
CN (1) CN113302344A (de)
DE (2) DE102019101991A1 (de)
ES (1) ES2955197T3 (de)
HR (1) HRP20231068T1 (de)
PL (1) PL3918116T3 (de)
SG (1) SG11202107900VA (de)
WO (1) WO2020156621A1 (de)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4293395B2 (ja) * 1999-04-28 2009-07-08 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｃｚ法単結晶インゴット製造装置及び方法
CN1396965A (zh) * 2000-02-01 2003-02-12 Memc电子材料有限公司 用于控制硅晶体生长使生长速率和直径的偏差减至最小的方法
DE10119947A1 (de) * 2001-04-24 2002-10-31 Crystal Growing Systems Gmbh Verfahren zum Steuern einer Kristallziehanlage und Kristallziehanlage zu seiner Durchführung
JP4457584B2 (ja) * 2003-06-27 2010-04-28 信越半導体株式会社 単結晶の製造方法及び単結晶
JP2005015313A (ja) 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
JP2006203111A (ja) 2005-01-24 2006-08-03 Hosiden Corp 物体検出センサ
DE102009056638B4 (de) 2009-12-02 2013-08-01 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser
JP5859566B2 (ja) * 2010-12-30 2016-02-10 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドＭｅｍｃ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 多数のカメラを用いる結晶の成長特性計測方法
JP6078974B2 (ja) 2012-04-04 2017-02-15 株式会社Sumco シリコン単結晶の製造方法
DE102013210687B4 (de) 2013-06-07 2018-12-06 Siltronic Ag Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser
KR101540863B1 (ko) * 2013-12-17 2015-07-30 주식회사 엘지실트론 잉곳 직경 제어장치 및 이를 포함하는 잉곳성장장치 및 그 방법
KR101571958B1 (ko) * 2014-01-28 2015-11-25 주식회사 엘지실트론 잉곳성장장치 및 잉곳성장방법

Also Published As

Publication number Publication date
WO2020156621A1 (de) 2020-08-06
CN113302344A (zh) 2021-08-24
TW202035804A (zh) 2020-10-01
EP3918116C0 (de) 2023-06-07
EP3918116A1 (de) 2021-12-08
JP2022518921A (ja) 2022-03-17
KR102698437B1 (ko) 2024-08-26
KR20210118413A (ko) 2021-09-30
HRP20231068T1 (hr) 2023-12-22
PL3918116T3 (pl) 2023-11-27
DE102019101991A1 (de) 2020-07-30
US20220098755A1 (en) 2022-03-31
ES2955197T3 (es) 2023-11-29
EP3918116B1 (de) 2023-06-07
DE112020000539A5 (de) 2021-10-21
US11965267B2 (en) 2024-04-23

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