SG11202105162TA - Cr-si sintered body - Google Patents

Cr-si sintered body

Info

Publication number
SG11202105162TA
SG11202105162TA SG11202105162TA SG11202105162TA SG11202105162TA SG 11202105162T A SG11202105162T A SG 11202105162TA SG 11202105162T A SG11202105162T A SG 11202105162TA SG 11202105162T A SG11202105162T A SG 11202105162TA SG 11202105162T A SG11202105162T A SG 11202105162TA
Authority
SG
Singapore
Prior art keywords
sintered body
sintered
Prior art date
Application number
SG11202105162TA
Inventor
Hiroyuki Hara
Hideto Kuramochi
Kenichi Itoh
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Publication of SG11202105162TA publication Critical patent/SG11202105162TA/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
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    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
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    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
  • Ceramic Products (AREA)
SG11202105162TA 2018-11-22 2019-11-18 Cr-si sintered body SG11202105162TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018218832 2018-11-22
JP2019108661 2019-06-11
PCT/JP2019/045113 WO2020105591A1 (en) 2018-11-22 2019-11-18 Cr-si sintered body

Publications (1)

Publication Number Publication Date
SG11202105162TA true SG11202105162TA (en) 2021-06-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105162TA SG11202105162TA (en) 2018-11-22 2019-11-18 Cr-si sintered body

Country Status (8)

Country Link
US (1) US11967493B2 (en)
EP (1) EP3885330A4 (en)
JP (1) JP2020203821A (en)
KR (1) KR102646469B1 (en)
CN (1) CN113165984B (en)
SG (1) SG11202105162TA (en)
TW (1) TW202024000A (en)
WO (1) WO2020105591A1 (en)

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WO2021193741A1 (en) * 2020-03-26 2021-09-30 東ソー株式会社 Cr-si sintered body, sputtering target, and method for producing thin film
JP7494567B2 (en) 2020-05-26 2024-06-04 東ソー株式会社 Cr-Si sintered body
KR20230017181A (en) * 2020-05-26 2023-02-03 도소 가부시키가이샤 Metal-Si-based powder, manufacturing method thereof, and manufacturing method of metal-Si-based sintered body, sputtering target, and metal-Si-based thin film
WO2022025033A1 (en) * 2020-07-31 2022-02-03 東ソー株式会社 Cr-Si-C-BASED SINTERED BODY
CN112376023A (en) * 2020-11-04 2021-02-19 宁波江丰电子材料股份有限公司 Preparation method of chromium-silicon alloy sputtering target material
JPWO2022210428A1 (en) * 2021-03-29 2022-10-06
JP7394085B2 (en) * 2021-04-05 2023-12-07 Ｊｘ金属株式会社 Sputtering target and its manufacturing method
CN113897585B (en) * 2021-10-11 2022-06-17 芜湖映日科技股份有限公司 Silicon-chromium rotary sputtering target material and preparation method thereof

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JPH05214523A (en) * 1992-02-05 1993-08-24 Toshiba Corp Sputtering target and its manufacture
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JP4135357B2 (en) * 2001-11-30 2008-08-20 日鉱金属株式会社 Metal silicide sputtering target and manufacturing method thereof
JP2004204278A (en) 2002-12-25 2004-07-22 Hitachi Metals Ltd Silicide target manufacturing method
JP4727664B2 (en) 2005-06-15 2011-07-20 Ｊｘ日鉱日石金属株式会社 Chromium oxide powder for sputtering target and sputtering target
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EP3885330A4 (en) 2022-08-24
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