SG11202101634TA - Confinement ring with extended life - Google Patents

Confinement ring with extended life

Info

Publication number
SG11202101634TA
SG11202101634TA SG11202101634TA SG11202101634TA SG11202101634TA SG 11202101634T A SG11202101634T A SG 11202101634TA SG 11202101634T A SG11202101634T A SG 11202101634TA SG 11202101634T A SG11202101634T A SG 11202101634TA SG 11202101634T A SG11202101634T A SG 11202101634TA
Authority
SG
Singapore
Prior art keywords
confinement ring
extended life
extended
life
confinement
Prior art date
Application number
SG11202101634TA
Inventor
Justin Charles Canniff
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11202101634TA publication Critical patent/SG11202101634TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11202101634TA 2018-08-28 2019-08-22 Confinement ring with extended life SG11202101634TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/114,497 US11515128B2 (en) 2018-08-28 2018-08-28 Confinement ring with extended life
PCT/US2019/047685 WO2020046708A1 (en) 2018-08-28 2019-08-22 Confinement ring with extended life

Publications (1)

Publication Number Publication Date
SG11202101634TA true SG11202101634TA (en) 2021-03-30

Family

ID=69640224

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202101634TA SG11202101634TA (en) 2018-08-28 2019-08-22 Confinement ring with extended life

Country Status (7)

Country Link
US (1) US11515128B2 (en)
JP (1) JP7470101B2 (en)
KR (1) KR20210038993A (en)
CN (1) CN112640084A (en)
SG (1) SG11202101634TA (en)
TW (1) TWI827654B (en)
WO (1) WO2020046708A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11380524B2 (en) 2020-03-19 2022-07-05 Applied Materials, Inc. Low resistance confinement liner for use in plasma chamber
KR20240045102A (en) 2022-09-29 2024-04-05 도쿄엘렉트론가부시키가이샤 Plasma processing apparatus and substrate processing apparatus

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6508911B1 (en) * 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
JP4141764B2 (en) * 2002-08-20 2008-08-27 東京エレクトロン株式会社 Plasma processing equipment
US10622194B2 (en) * 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US9486374B2 (en) 2009-07-15 2016-11-08 Hill-Rom Services, Inc. Medical line manager
CN102550130A (en) 2009-08-31 2012-07-04 朗姆研究公司 A multi-peripheral ring arrangement for performing plasma confinement
JP5377587B2 (en) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 Antenna, plasma processing apparatus, and plasma processing method
US9156293B2 (en) 2012-06-18 2015-10-13 Cimpress Schweiz Gmbh Manufacturing tray with customized inlays for processing different types of articles of manufacture
US9048222B2 (en) 2013-03-06 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating interconnect structure for package-on-package devices
US20170011029A1 (en) 2013-05-09 2017-01-12 Moodwire, Inc. Hybrid human machine learning system and method
US9184029B2 (en) 2013-09-03 2015-11-10 Lam Research Corporation System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor
CN104684235B (en) * 2013-11-28 2017-07-07 中微半导体设备(上海)有限公司 A kind of inductance coil group and inductance coupling plasma processing device
KR101535155B1 (en) 2014-01-09 2015-07-09 주식회사 유진테크 Apparatus for processing substrate
CN106068548B (en) * 2014-03-07 2020-02-28 等离子瑟姆有限公司 Method and apparatus for plasma dicing semiconductor wafers
CN105575848B (en) * 2014-10-17 2018-08-28 中微半导体设备(上海)有限公司 Vacuum lock system and processing method for substrate
US9384998B2 (en) * 2014-12-04 2016-07-05 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9728437B2 (en) * 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9790582B2 (en) * 2015-04-27 2017-10-17 Lam Research Corporation Long lifetime thermal spray coating for etching or deposition chamber application
US11008655B2 (en) * 2016-03-03 2021-05-18 Lam Research Corporation Components such as edge rings including chemical vapor deposition (CVD) diamond coating with high purity SP3 bonds for plasma processing systems

Also Published As

Publication number Publication date
JP2021536671A (en) 2021-12-27
TWI827654B (en) 2024-01-01
KR20210038993A (en) 2021-04-08
JP7470101B2 (en) 2024-04-17
TW202025216A (en) 2020-07-01
CN112640084A (en) 2021-04-09
US11515128B2 (en) 2022-11-29
WO2020046708A1 (en) 2020-03-05
US20200075295A1 (en) 2020-03-05

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