SG11202100609UA - Systems and methods for workpiece processing using neutral atom beams - Google Patents

Systems and methods for workpiece processing using neutral atom beams

Info

Publication number
SG11202100609UA
SG11202100609UA SG11202100609UA SG11202100609UA SG11202100609UA SG 11202100609U A SG11202100609U A SG 11202100609UA SG 11202100609U A SG11202100609U A SG 11202100609UA SG 11202100609U A SG11202100609U A SG 11202100609UA SG 11202100609U A SG11202100609U A SG 11202100609UA
Authority
SG
Singapore
Prior art keywords
systems
methods
workpiece processing
neutral atom
atom beams
Prior art date
Application number
SG11202100609UA
Inventor
Stephen Savas
Original Assignee
Mattson Tech Inc
Beijing E Town Semiconductor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Tech Inc, Beijing E Town Semiconductor Technology Co Ltd filed Critical Mattson Tech Inc
Publication of SG11202100609UA publication Critical patent/SG11202100609UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H01J27/024—Extraction optics, e.g. grids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/02—Molecular or atomic beam generation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
SG11202100609UA 2018-08-06 2019-08-05 Systems and methods for workpiece processing using neutral atom beams SG11202100609UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/055,685 US11251075B2 (en) 2018-08-06 2018-08-06 Systems and methods for workpiece processing using neutral atom beams
PCT/US2019/045077 WO2020033294A1 (en) 2018-08-06 2019-08-05 Systems and methods for workpiece processing using neutral atom beams

Publications (1)

Publication Number Publication Date
SG11202100609UA true SG11202100609UA (en) 2021-03-30

Family

ID=69227566

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202100609UA SG11202100609UA (en) 2018-08-06 2019-08-05 Systems and methods for workpiece processing using neutral atom beams

Country Status (7)

Country Link
US (2) US11251075B2 (en)
JP (2) JP7125542B2 (en)
KR (2) KR102596117B1 (en)
CN (1) CN112470246B (en)
SG (1) SG11202100609UA (en)
TW (1) TWI757620B (en)
WO (1) WO2020033294A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
US11189464B2 (en) * 2019-07-17 2021-11-30 Beijing E-town Semiconductor Technology Co., Ltd. Variable mode plasma chamber utilizing tunable plasma potential
KR102391045B1 (en) * 2020-08-25 2022-04-27 한국과학기술원 Plasma Apparatus With An electron Beam Emission Source
CN117412459B (en) * 2023-12-11 2024-02-13 西南交通大学 Diagnostic method and system for measuring plasma density and fluctuation thereof

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE41585B1 (en) * 1974-10-07 1980-02-13 Pfizer 6-isocyanato-2,2-dimethyl-3-(5-tetrazolyl)penams
US4140576A (en) 1976-09-22 1979-02-20 The United States Of America As Represented By The United States Department Of Energy Apparatus for neutralization of accelerated ions
GB2095898B (en) * 1981-03-27 1985-01-09 Philips Electronic Associated Methods of manufacturing a detector device
JPS6467854A (en) * 1987-09-09 1989-03-14 Toshiba Corp Ion beam generator
US4975572A (en) 1987-11-04 1990-12-04 The Boeing Company Apparatus for producing a monatomic beam of ground-state atoms
JPH05159894A (en) * 1991-12-06 1993-06-25 Toshiba Corp Anion source
JPH05234904A (en) * 1992-02-25 1993-09-10 Toshiba Corp Ion beam irradiation equipment
JPH0917345A (en) * 1995-06-30 1997-01-17 Japan Atom Energy Res Inst Anion source electrode
JP2842344B2 (en) 1995-11-14 1999-01-06 日本電気株式会社 Neutral beam processing equipment
US5992244A (en) * 1998-03-04 1999-11-30 Regents Of The University Of Minnesota Charged particle neutralizing apparatus and method of neutralizing charged particles
JP3948857B2 (en) * 1999-07-14 2007-07-25 株式会社荏原製作所 Beam source
US6838677B2 (en) * 2000-11-20 2005-01-04 Varian Semiconductor Equipment Associates, Inc. Extraction and deceleration of low energy beam with low beam divergence
JP2003028992A (en) * 2001-07-16 2003-01-29 Toshiba Corp Ion source
KR100412953B1 (en) 2001-11-26 2003-12-31 학교법인 성균관대학 Etching apparatus using neutral beam
KR100390540B1 (en) * 2002-07-31 2003-07-04 에이엔 에스 주식회사 Magnetron plasma etching apparatus
WO2004027813A1 (en) * 2002-09-23 2004-04-01 Epion Corporation System for and method of gas cluster ion beam processing
JP4411581B2 (en) * 2003-06-13 2010-02-10 株式会社Ｓｅｎ Ion source device and electron energy optimization method therefor
KR20050089516A (en) * 2004-03-05 2005-09-08 학교법인 성균관대학 Neutral beam source equipped with electro-magnet
KR100851902B1 (en) 2005-01-27 2008-08-13 삼성전자주식회사 An ion beam neutralizing apparatus
US7358484B2 (en) 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating
KR100868019B1 (en) 2007-01-30 2008-11-10 삼성전자주식회사 Ion beam apparatus having plasma sheath controller
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
KR101385750B1 (en) 2007-11-30 2014-04-18 삼성전자주식회사 Substrate processing apparatus using neutralized beam and method thereof
EP2430637A1 (en) * 2009-05-15 2012-03-21 Alpha Source LLC Ecr particle beam source apparatus, system and method
RU2619923C2 (en) * 2012-09-04 2017-05-22 Трай Альфа Энерджи, Инк. Neutral particle beam injector based on negative ions
WO2014097576A1 (en) 2012-12-19 2014-06-26 キヤノンアネルバ株式会社 Grid assembly and ion beam etching apparatus
US9591740B2 (en) 2013-03-08 2017-03-07 Tri Alpha Energy, Inc. Negative ion-based neutral beam injector
US9288889B2 (en) 2013-03-13 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for energetic neutral beam processing
JP2017037861A (en) * 2013-12-18 2017-02-16 株式会社アルバック Plasma doping device and method
US9653253B2 (en) * 2014-03-07 2017-05-16 Advanced Ion Beam Technology, Inc. Plasma-based material modification using a plasma source with magnetic confinement
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams

Also Published As

Publication number Publication date
US20200043775A1 (en) 2020-02-06
JP2021533572A (en) 2021-12-02
KR20210025699A (en) 2021-03-09
CN112470246A (en) 2021-03-09
JP7125542B2 (en) 2022-08-24
TW202025214A (en) 2020-07-01
US11251075B2 (en) 2022-02-15
JP2022166171A (en) 2022-11-01
TWI757620B (en) 2022-03-11
CN112470246B (en) 2021-11-19
JP7369835B2 (en) 2023-10-26
KR102567704B1 (en) 2023-08-17
KR20230119732A (en) 2023-08-16
US20220165614A1 (en) 2022-05-26
WO2020033294A1 (en) 2020-02-13
KR102596117B1 (en) 2023-10-31

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