SG11202010269WA - Technique to enable high temperature clean for rapid processing of wafers - Google Patents

Technique to enable high temperature clean for rapid processing of wafers

Info

Publication number
SG11202010269WA
SG11202010269WA SG11202010269WA SG11202010269WA SG11202010269WA SG 11202010269W A SG11202010269W A SG 11202010269WA SG 11202010269W A SG11202010269W A SG 11202010269WA SG 11202010269W A SG11202010269W A SG 11202010269WA SG 11202010269W A SG11202010269W A SG 11202010269WA
Authority
SG
Singapore
Prior art keywords
wafers
technique
high temperature
enable high
rapid processing
Prior art date
Application number
SG11202010269WA
Inventor
Venkata Sharat Chandra Parimi
Zhijun Jiang
Ganesh Balasubramanian
Vivek Bharat Shah
Shailendra Srivastava
Amit Kumar Bansal
Xinhai Han
Vinay K Prabhakar
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202010269WA publication Critical patent/SG11202010269WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG11202010269WA 2018-06-15 2019-05-29 Technique to enable high temperature clean for rapid processing of wafers SG11202010269WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862685789P 2018-06-15 2018-06-15
PCT/US2019/034235 WO2019240942A1 (en) 2018-06-15 2019-05-29 Technique to enable high temperature clean for rapid processing of wafers

Publications (1)

Publication Number Publication Date
SG11202010269WA true SG11202010269WA (en) 2020-12-30

Family

ID=68839659

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010269WA SG11202010269WA (en) 2018-06-15 2019-05-29 Technique to enable high temperature clean for rapid processing of wafers

Country Status (7)

Country Link
US (1) US20190382889A1 (en)
JP (1) JP2021527332A (en)
KR (1) KR20210009366A (en)
CN (1) CN112166491A (en)
SG (1) SG11202010269WA (en)
TW (1) TW202000327A (en)
WO (1) WO2019240942A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021213673A1 (en) * 2020-04-24 2021-10-28 Applied Materials, Inc. Apparatus for reducing deposition of contaminating molecules on a substrate
KR102516340B1 (en) * 2020-09-08 2023-03-31 주식회사 유진테크 Substrate processing apparatus and operation method for substrate processing apparatus
US11924903B2 (en) * 2020-10-06 2024-03-05 Saudi Arabian Oil Company Prevention of collateral process safety risks utilizing highly reliable communication through cloud IoT
US11955318B2 (en) * 2021-03-12 2024-04-09 Applied Materials, Inc. Ash rate recovery method in plasma strip chamber
US11837448B2 (en) 2021-04-27 2023-12-05 Applied Materials, Inc. High-temperature chamber and chamber component cleaning and maintenance method and apparatus
US11772137B2 (en) * 2021-07-23 2023-10-03 Applied Materials, Inc. Reactive cleaning of substrate support

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040035280A (en) * 2002-10-19 2004-04-29 주성엔지니어링(주) Method for in-situ cleaning of deposition chamber
KR100505065B1 (en) * 2002-12-26 2005-07-29 삼성전자주식회사 Method for deposition chamber cleaning and apparatus for depositing capable of in-situ cleaning
WO2009085561A2 (en) * 2007-12-20 2009-07-09 S.O.I.Tec Silicon On Insulator Technologies Methods for in-situ chamber cleaning process for high volume manufacture of semiconductor materials
EP2608899A4 (en) * 2010-08-25 2016-04-20 Linde Ag Deposition chamber cleaning using in situ activation of molecular fluorine
US10002745B2 (en) * 2016-05-03 2018-06-19 Applied Materials, Inc. Plasma treatment process for in-situ chamber cleaning efficiency enhancement in plasma processing chamber

Also Published As

Publication number Publication date
CN112166491A (en) 2021-01-01
US20190382889A1 (en) 2019-12-19
JP2021527332A (en) 2021-10-11
KR20210009366A (en) 2021-01-26
WO2019240942A1 (en) 2019-12-19
TW202000327A (en) 2020-01-01

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