SG11202009222SA - Quartz glass crucible and method for producing the same - Google Patents
Quartz glass crucible and method for producing the sameInfo
- Publication number
- SG11202009222SA SG11202009222SA SG11202009222SA SG11202009222SA SG11202009222SA SG 11202009222S A SG11202009222S A SG 11202009222SA SG 11202009222S A SG11202009222S A SG 11202009222SA SG 11202009222S A SG11202009222S A SG 11202009222SA SG 11202009222S A SG11202009222S A SG 11202009222SA
- Authority
- SG
- Singapore
- Prior art keywords
- producing
- same
- quartz glass
- glass crucible
- crucible
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018073766A JP7141844B2 (en) | 2018-04-06 | 2018-04-06 | Manufacturing method of quartz glass crucible |
| PCT/JP2019/005945 WO2019193851A1 (en) | 2018-04-06 | 2019-02-19 | Quartz glass crucible and method of manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202009222SA true SG11202009222SA (en) | 2020-10-29 |
Family
ID=68100677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202009222SA SG11202009222SA (en) | 2018-04-06 | 2019-02-19 | Quartz glass crucible and method for producing the same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11629429B2 (en) |
| EP (1) | EP3778996A4 (en) |
| JP (1) | JP7141844B2 (en) |
| KR (1) | KR20200140815A (en) |
| CN (1) | CN111936678B (en) |
| SG (1) | SG11202009222SA (en) |
| TW (1) | TWI795534B (en) |
| WO (1) | WO2019193851A1 (en) |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729871B2 (en) | 1987-12-03 | 1995-04-05 | 信越半導体 株式会社 | Quartz crucible for pulling single crystals |
| US4935046A (en) | 1987-12-03 | 1990-06-19 | Shin-Etsu Handotai Company, Limited | Manufacture of a quartz glass vessel for the growth of single crystal semiconductor |
| JP2714860B2 (en) * | 1989-07-28 | 1998-02-16 | 東芝セラミックス株式会社 | Quartz glass crucible for pulling semiconductor nest crystal |
| DE19962449C2 (en) * | 1999-12-22 | 2003-09-25 | Heraeus Quarzglas | Quartz glass crucibles and process for its production |
| JP4166241B2 (en) * | 2003-05-01 | 2008-10-15 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystal and method for producing the same |
| TWI234981B (en) * | 2004-03-19 | 2005-06-21 | Asustek Comp Inc | Cover with guiding function and electrical apparatus |
| US7716948B2 (en) | 2006-12-18 | 2010-05-18 | Heraeus Shin-Etsu America, Inc. | Crucible having a doped upper wall portion and method for making the same |
| DE102008026890B3 (en) * | 2008-06-05 | 2009-06-04 | Heraeus Quarzglas Gmbh & Co. Kg | Method and device for producing a quartz glass crucible |
| JP5069663B2 (en) * | 2008-10-31 | 2012-11-07 | ジャパンスーパークォーツ株式会社 | Quartz glass crucible with multilayer structure |
| JP5036735B2 (en) * | 2009-01-05 | 2012-09-26 | ジャパンスーパークォーツ株式会社 | Silica glass crucible for pulling silicon single crystal and manufacturing method thereof |
| JP4987029B2 (en) * | 2009-04-02 | 2012-07-25 | ジャパンスーパークォーツ株式会社 | Silica glass crucible for pulling silicon single crystals |
| JP5472971B2 (en) * | 2009-05-29 | 2014-04-16 | コバレントマテリアル株式会社 | Silica glass crucible |
| EP2476786B1 (en) * | 2009-09-10 | 2014-02-19 | Japan Super Quartz Corporation | Silica glass crucible for pulling silicon single crystal and method for producing same |
| JP5334315B2 (en) * | 2009-09-30 | 2013-11-06 | コバレントマテリアル株式会社 | Silica glass crucible for silicon single crystal pulling |
| DE102010008162B4 (en) * | 2010-02-16 | 2017-03-16 | Heraeus Quarzglas Gmbh & Co. Kg | Method for the production of quartz glass for a quartz glass crucible |
| JP5473878B2 (en) * | 2010-12-02 | 2014-04-16 | 株式会社Ｓｕｍｃｏ | Method for producing quartz glass crucible for pulling silicon single crystal |
| KR101497385B1 (en) * | 2012-05-15 | 2015-03-03 | 신에쯔 세끼에이 가부시키가이샤 | Silica vessel for drawing up monocrystalline silicon and method for producing same |
| EP3088572B1 (en) * | 2013-12-28 | 2019-05-15 | SUMCO Corporation | Quartz glass crucible and manufacturing method therefor |
| KR20170000548A (en) * | 2015-06-24 | 2017-01-03 | (주) 보람케메탈 | Mold and Vacuum System for Preparation of Pore-Free Quartz Crucibles |
| JP6759020B2 (en) * | 2016-09-08 | 2020-09-23 | グローバルウェーハズ・ジャパン株式会社 | Silicon single crystal manufacturing method and quartz crucible for silicon single crystal manufacturing after modification treatment |
| SG11201811126SA (en) * | 2016-09-23 | 2019-01-30 | Sumco Corp | Quartz glass crucible, manufacturing method thereof, and manufacturing method of silicon single crystal using quartz glass crucible |
-
2018
- 2018-04-06 JP JP2018073766A patent/JP7141844B2/en active Active
-
2019
- 2019-02-19 SG SG11202009222SA patent/SG11202009222SA/en unknown
- 2019-02-19 EP EP19780872.8A patent/EP3778996A4/en active Pending
- 2019-02-19 US US17/043,484 patent/US11629429B2/en active Active
- 2019-02-19 KR KR1020207028140A patent/KR20200140815A/en not_active Application Discontinuation
- 2019-02-19 CN CN201980024394.5A patent/CN111936678B/en active Active
- 2019-02-19 WO PCT/JP2019/005945 patent/WO2019193851A1/en active Application Filing
- 2019-02-26 TW TW108106397A patent/TWI795534B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201943663A (en) | 2019-11-16 |
| EP3778996A4 (en) | 2021-12-15 |
| WO2019193851A1 (en) | 2019-10-10 |
| US20210108329A1 (en) | 2021-04-15 |
| JP7141844B2 (en) | 2022-09-26 |
| KR20200140815A (en) | 2020-12-16 |
| JP2019182697A (en) | 2019-10-24 |
| CN111936678A (en) | 2020-11-13 |
| US11629429B2 (en) | 2023-04-18 |
| EP3778996A1 (en) | 2021-02-17 |
| TWI795534B (en) | 2023-03-11 |
| CN111936678B (en) | 2023-03-31 |
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