SG11202002760YA - Method for producing joined body, and joining material - Google Patents
Method for producing joined body, and joining materialInfo
- Publication number
- SG11202002760YA SG11202002760YA SG11202002760YA SG11202002760YA SG11202002760YA SG 11202002760Y A SG11202002760Y A SG 11202002760YA SG 11202002760Y A SG11202002760Y A SG 11202002760YA SG 11202002760Y A SG11202002760Y A SG 11202002760YA SG 11202002760Y A SG11202002760Y A SG 11202002760YA
- Authority
- SG
- Singapore
- Prior art keywords
- joined body
- joining material
- producing joined
- producing
- joining
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/068—Flake-like particles
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/81048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81054—Composition of the atmosphere
- H01L2224/81065—Composition of the atmosphere being reducing
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81054—Composition of the atmosphere
- H01L2224/81075—Composition of the atmosphere being inert
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81091—Under pressure
- H01L2224/81092—Atmospheric pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81095—Temperature settings
- H01L2224/81096—Transient conditions
- H01L2224/81097—Heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/8123—Polychromatic or infrared lamp heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/8184—Sintering
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Powder Metallurgy (AREA)
- Wire Bonding (AREA)
- Non-Disconnectible Joints And Screw-Threaded Joints (AREA)
Applications Claiming Priority (2)
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JP2017215792 | 2017-11-08 | ||
PCT/JP2018/041517 WO2019093427A1 (en) | 2017-11-08 | 2018-11-08 | Method for producing joined body, and joining material |
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SG11202002760YA true SG11202002760YA (en) | 2020-05-28 |
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SG11202002760YA SG11202002760YA (en) | 2017-11-08 | 2018-11-08 | Method for producing joined body, and joining material |
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EP (1) | EP3709339A4 (en) |
JP (1) | JP7279639B2 (en) |
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CN (1) | CN111295741B (en) |
SG (1) | SG11202002760YA (en) |
TW (1) | TWI806919B (en) |
WO (1) | WO2019093427A1 (en) |
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EP4023362A1 (en) * | 2019-09-25 | 2022-07-06 | Showa Denko Materials Co., Ltd. | Copper paste for forming sintered copper pillar and method for producing bonded body |
US11235404B2 (en) * | 2020-03-21 | 2022-02-01 | International Business Machines Corporation | Personalized copper block for selective solder removal |
WO2021193150A1 (en) * | 2020-03-27 | 2021-09-30 | 三井金属鉱業株式会社 | Composition for provisional fixation and method for producing bonded structure |
WO2021256040A1 (en) * | 2020-06-15 | 2021-12-23 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device and method for producing same |
KR20220005724A (en) * | 2020-07-07 | 2022-01-14 | 주식회사 프로텍 | Method of Bonding Copper Pillar to PCB by Pressurizing Copper Pillar |
KR102423021B1 (en) * | 2020-08-07 | 2022-07-19 | 서울과학기술대학교 산학협력단 | Forming Method of Cu to Cu Flip Chip Interconnection and Cu to Cu Flip Chip Interconnection Thereby |
CN114430624B (en) * | 2020-10-29 | 2024-03-15 | 鹏鼎控股(深圳)股份有限公司 | Circuit board manufacturing method and circuit board |
KR102459361B1 (en) * | 2020-12-14 | 2022-10-28 | 파워마스터반도체 주식회사 | Power module package |
WO2023153163A1 (en) * | 2022-02-09 | 2023-08-17 | パナソニックIpマネジメント株式会社 | Flip-chip mounting structure and flip-chip mounting method |
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WO1996000969A1 (en) * | 1994-06-29 | 1996-01-11 | Robert Bosch Gmbh | Anisotropically conducting adhesive and process for its production |
KR100711967B1 (en) * | 2005-08-08 | 2007-05-02 | 삼성전기주식회사 | Method for making silver nanoparticles and comductive ink |
US7658988B2 (en) * | 2006-04-03 | 2010-02-09 | E. I. Du Pont De Nemours And Company | Printed circuits prepared from filled epoxy compositions |
JP2007321215A (en) * | 2006-06-02 | 2007-12-13 | Nippon Shokubai Co Ltd | Dispersion of metallic nanoparticle and metallic coating film |
US8234773B2 (en) * | 2006-06-05 | 2012-08-07 | The United States Of America As Represented By The Secretary Of The Army | Apparatus and method for forming electronic devices |
JP5205717B2 (en) * | 2006-07-04 | 2013-06-05 | セイコーエプソン株式会社 | Copper formate complex, method for producing copper particles, and method for producing wiring board |
JP5393988B2 (en) * | 2008-02-21 | 2014-01-22 | トッパン・フォームズ株式会社 | Ink and method for forming wiring |
US7898083B2 (en) * | 2008-12-17 | 2011-03-01 | Texas Instruments Incorporated | Method for low stress flip-chip assembly of fine-pitch semiconductor devices |
WO2011155055A1 (en) * | 2010-06-11 | 2011-12-15 | Dowaエレクトロニクス株式会社 | Low-temperature-sintering bonding material and bonding method using the bonding material |
US8951445B2 (en) * | 2011-04-14 | 2015-02-10 | International Business Machines Corporation | Bridging arrangement and method for manufacturing a bridging arrangement |
EP2781620A4 (en) * | 2011-11-15 | 2015-05-27 | Nof Corp | Composition for forming copper pattern and method for forming copper pattern |
JP6090311B2 (en) * | 2012-04-25 | 2017-03-08 | 日立化成株式会社 | Circuit connection material, circuit connection structure and adhesive film |
JP6351938B2 (en) * | 2013-08-16 | 2018-07-04 | 国立大学法人大阪大学 | Manufacturing method of bonded structure, bonded structure and apparatus |
JP2015065123A (en) * | 2013-09-26 | 2015-04-09 | 東洋紡株式会社 | Conductive paste, conductive thin film, and circuit |
US9570385B2 (en) * | 2015-01-22 | 2017-02-14 | Invensas Corporation | Method for fabrication of interconnection circuitry with electrically conductive features passing through a support and comprising core portions formed using nanoparticle-containing inks |
US10170445B2 (en) * | 2015-05-26 | 2019-01-01 | International Business Machines Corporation | Method for electrical coupling and electric coupling arrangement |
EP3348338B1 (en) * | 2015-09-07 | 2020-06-10 | Hitachi Chemical Company, Ltd. | Copper paste for joining, method for producing joined body, and method for producing semiconductor device |
JP6659026B2 (en) * | 2015-10-14 | 2020-03-04 | 国立大学法人大阪大学 | Low temperature joining method using copper particles |
JP7005121B2 (en) * | 2015-12-04 | 2022-01-21 | 昭和電工マテリアルズ株式会社 | Copper paste for non-pressurized bonding, bonded bodies, and semiconductor devices |
JP2017155166A (en) * | 2016-03-03 | 2017-09-07 | バンドー化学株式会社 | Joining composition |
JP6796937B2 (en) * | 2016-03-16 | 2020-12-09 | 日東電工株式会社 | Manufacturing method of joint |
JPWO2021066026A1 (en) * | 2019-09-30 | 2021-04-08 |
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