SG11202001953SA - Metal mesh light pipe for transporting light in an image sensor - Google Patents

Metal mesh light pipe for transporting light in an image sensor

Info

Publication number
SG11202001953SA
SG11202001953SA SG11202001953SA SG11202001953SA SG11202001953SA SG 11202001953S A SG11202001953S A SG 11202001953SA SG 11202001953S A SG11202001953S A SG 11202001953SA SG 11202001953S A SG11202001953S A SG 11202001953SA SG 11202001953S A SG11202001953S A SG 11202001953SA
Authority
SG
Singapore
Prior art keywords
light
image sensor
metal mesh
transporting
light pipe
Prior art date
Application number
SG11202001953SA
Other languages
English (en)
Inventor
Jian Ma
Biay-Cheng Hseih
Sergiu Radu Goma
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of SG11202001953SA publication Critical patent/SG11202001953SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/51—Housings
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
SG11202001953SA 2017-10-17 2018-10-17 Metal mesh light pipe for transporting light in an image sensor SG11202001953SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762573612P 2017-10-17 2017-10-17
US16/161,958 US10608036B2 (en) 2017-10-17 2018-10-16 Metal mesh light pipe for transporting light in an image sensor
PCT/US2018/056238 WO2019079415A1 (en) 2017-10-17 2018-10-17 METALLIC MESH LIGHT CONDUIT FOR TRANSPORTING LIGHT IN IMAGE SENSOR

Publications (1)

Publication Number Publication Date
SG11202001953SA true SG11202001953SA (en) 2020-05-28

Family

ID=66096033

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202001953SA SG11202001953SA (en) 2017-10-17 2018-10-17 Metal mesh light pipe for transporting light in an image sensor

Country Status (7)

Country Link
US (1) US10608036B2 (pt)
EP (1) EP3698406B1 (pt)
CN (1) CN111213239B (pt)
BR (1) BR112020007363A2 (pt)
SG (1) SG11202001953SA (pt)
TW (1) TW201929254A (pt)
WO (1) WO2019079415A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11037966B2 (en) * 2017-09-22 2021-06-15 Qualcomm Incorporated Solid state image sensor with on-chip filter and extended spectral response
EP3724920B1 (en) * 2017-12-12 2022-05-11 LFoundry S.r.l. Semiconductor optical sensor for visible and ultraviolet light detection and corresponding manufacturing process
DE102018126421A1 (de) 2018-09-27 2020-04-02 Taiwan Semiconductor Manufacturing Co. Ltd. Bandpassfilter für gestapelten sensor
US10651225B2 (en) * 2018-09-27 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Band-pass filter for stacked sensor
FR3093376B1 (fr) 2019-03-01 2022-09-02 Isorg Capteur d'images couleur et infrarouge
FR3093377B1 (fr) * 2019-03-01 2021-02-26 Isorg Capteur d'images couleur et infrarouge
CN111403428A (zh) * 2020-03-23 2020-07-10 中山大学 光电传感器、可随机读取有源像素电路、图像传感器和相机装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100487898C (zh) * 2001-11-05 2009-05-13 佐伊科比株式会社 固体图像传感器及其制造方法
US20040135209A1 (en) * 2002-02-05 2004-07-15 Tzu-Chiang Hsieh Camera with MOS or CMOS sensor array
US20070045642A1 (en) * 2005-08-25 2007-03-01 Micron Technology, Inc. Solid-state imager and formation method using anti-reflective film for optical crosstalk reduction
US7524694B2 (en) * 2005-12-16 2009-04-28 International Business Machines Corporation Funneled light pipe for pixel sensors
US7777287B2 (en) * 2006-07-12 2010-08-17 Micron Technology, Inc. System and apparatus providing analytical device based on solid state image sensor
US8237832B2 (en) 2008-05-30 2012-08-07 Omnivision Technologies, Inc. Image sensor with focusing interconnections
US8054355B2 (en) * 2008-10-16 2011-11-08 Omnivision Technologies, Inc. Image sensor having multiple sensing layers
JP2011216701A (ja) * 2010-03-31 2011-10-27 Sony Corp 固体撮像装置及び電子機器
US9294691B2 (en) * 2011-09-06 2016-03-22 Sony Corporation Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method
CN103258835A (zh) * 2013-05-02 2013-08-21 上海华力微电子有限公司 Cis器件中光通道的形成方法
JP6196911B2 (ja) 2014-02-05 2017-09-13 オリンパス株式会社 固体撮像装置および撮像装置
US9786705B2 (en) 2015-12-21 2017-10-10 Qualcomm Incorporated Solid state image sensor with extended spectral response

Also Published As

Publication number Publication date
EP3698406B1 (en) 2023-12-27
EP3698406C0 (en) 2023-12-27
CN111213239A (zh) 2020-05-29
TW201929254A (zh) 2019-07-16
WO2019079415A1 (en) 2019-04-25
US10608036B2 (en) 2020-03-31
CN111213239B (zh) 2021-07-16
US20190115386A1 (en) 2019-04-18
EP3698406A1 (en) 2020-08-26
BR112020007363A2 (pt) 2020-09-29

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