SG11202000619WA - Gallium oxide-doped crystalline material, preparation method and application thereof - Google Patents

Gallium oxide-doped crystalline material, preparation method and application thereof

Info

Publication number
SG11202000619WA
SG11202000619WA SG11202000619WA SG11202000619WA SG11202000619WA SG 11202000619W A SG11202000619W A SG 11202000619WA SG 11202000619W A SG11202000619W A SG 11202000619WA SG 11202000619W A SG11202000619W A SG 11202000619WA SG 11202000619W A SG11202000619W A SG 11202000619WA
Authority
SG
Singapore
Prior art keywords
preparation
application
crystalline material
gallium oxide
doped crystalline
Prior art date
Application number
SG11202000619WA
Inventor
Changtai Xia
Qinglin Sai
Wei Zhou
Hongji Qi
Original Assignee
Shanghai Inst Optics & Fine Mech Cas
Hangzhou Institute Of Optics And Fine Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201710061035.XA external-priority patent/CN108342775B/en
Priority claimed from CN201710124917.6A external-priority patent/CN108531989A/en
Application filed by Shanghai Inst Optics & Fine Mech Cas, Hangzhou Institute Of Optics And Fine Mech filed Critical Shanghai Inst Optics & Fine Mech Cas
Publication of SG11202000619WA publication Critical patent/SG11202000619WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202000619WA 2017-01-25 2018-01-24 Gallium oxide-doped crystalline material, preparation method and application thereof SG11202000619WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201710061035.XA CN108342775B (en) 2017-01-25 2017-01-25 Tantalum-doped beta gallium oxide crystalline material and preparation method and application thereof
CN201710124917.6A CN108531989A (en) 2017-03-03 2017-03-03 Adulterate gallium oxide crystal and preparation method thereof
PCT/CN2018/074058 WO2018137673A1 (en) 2017-01-25 2018-01-24 Gallium oxide-doped crystalline material, preparation method and application thereof

Publications (1)

Publication Number Publication Date
SG11202000619WA true SG11202000619WA (en) 2020-02-27

Family

ID=62979047

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000619WA SG11202000619WA (en) 2017-01-25 2018-01-24 Gallium oxide-doped crystalline material, preparation method and application thereof

Country Status (7)

Country Link
US (1) US11098416B2 (en)
EP (1) EP3572561B1 (en)
JP (1) JP6956189B2 (en)
KR (1) KR102414621B1 (en)
CN (1) CN110325671A (en)
SG (1) SG11202000619WA (en)
WO (1) WO2018137673A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3085535B1 (en) * 2019-04-17 2021-02-12 Hosseini Teherani Ferechteh A method of manufacturing p-type gallium oxide by intrinsic doping, the resulting thin film of gallium oxide and its use
CN111077560B (en) * 2019-12-03 2022-12-16 同济大学 X-ray and gamma-ray detector based on magnesium-doped gallium oxide single crystal
CN112086344B (en) * 2020-09-22 2022-12-20 中山大学 Preparation method of aluminum gallium oxide/gallium oxide heterojunction film and application of aluminum gallium oxide/gallium oxide heterojunction film in vacuum ultraviolet detection
US11462402B2 (en) * 2020-10-21 2022-10-04 Cornell University Suboxide molecular-beam epitaxy and related structures
JP2022149310A (en) * 2021-03-25 2022-10-06 Tdk株式会社 Crystal manufacturing method, crystal manufacturing apparatus, and single crystal
CN114086254B (en) * 2021-10-12 2022-11-11 杭州富加镓业科技有限公司 Ga 2 O 3 Single crystal and method for producing the same
CN114134561A (en) * 2021-12-07 2022-03-04 杭州富加镓业科技有限公司 Crystal growth thermal field dynamic reflecting screen adjusting method
CN114408970B (en) * 2022-01-25 2023-07-18 重庆邮电大学 Preparation method of hollow mesoporous carbon-doped gallium trioxide nanospheres and product thereof
WO2024053010A1 (en) * 2022-09-07 2024-03-14 住友電気工業株式会社 High-purity digallium trioxide, and method for producing same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4083396B2 (en) * 2000-07-10 2008-04-30 独立行政法人科学技術振興機構 Ultraviolet transparent conductive film and manufacturing method thereof
US7205256B2 (en) 2000-10-17 2007-04-17 Sharp Kabushiki Kaisha Oxide material, method for preparing oxide thin film and element using said material
JP4630986B2 (en) * 2003-02-24 2011-02-09 学校法人早稲田大学 β-Ga2O3-based single crystal growth method
CA2517024C (en) * 2003-02-24 2009-12-01 Waseda University .beta.-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method
JP2005235961A (en) * 2004-02-18 2005-09-02 Univ Waseda Method for controlling conductivity of gallium oxide series monocrystal
CN102431977B (en) * 2011-09-05 2013-02-13 吉林大学 Method for preparing manganese-doped gallium nitride nano-material
WO2013035845A1 (en) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Ga2o3 semiconductor element
CN103878010B (en) * 2014-04-15 2016-02-17 哈尔滨工业大学 VB race metal ion mixing (Ga 1-xzn x) (N 1-xo x) preparation method of mischcrystal photocatalyst
JP2015083536A (en) * 2014-11-04 2015-04-30 学校法人早稲田大学 β-Ga2O3 SINGLE CRYSTAL AND LIGHT-EMITTING DEVICE
JP6376600B2 (en) * 2015-03-20 2018-08-22 株式会社タムラ製作所 Method for manufacturing crystal laminated structure
CN105239162A (en) * 2015-08-25 2016-01-13 中国科学院上海光学精密机械研究所 Aluminum oxide-gallium oxide mixed-crystal material for wide-band-gap semiconductors

Also Published As

Publication number Publication date
EP3572561B1 (en) 2023-06-28
KR102414621B1 (en) 2022-06-30
KR20200002789A (en) 2020-01-08
WO2018137673A1 (en) 2018-08-02
US11098416B2 (en) 2021-08-24
CN110325671A (en) 2019-10-11
JP6956189B2 (en) 2021-11-02
EP3572561A4 (en) 2020-01-08
EP3572561A1 (en) 2019-11-27
US20190352798A1 (en) 2019-11-21
JP2020505305A (en) 2020-02-20

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