SG11201911992TA - Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay - Google Patents
Hybrid overlay target design for imaging-based overlay and scatterometry-based overlayInfo
- Publication number
- SG11201911992TA SG11201911992TA SG11201911992TA SG11201911992TA SG11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA SG 11201911992T A SG11201911992T A SG 11201911992TA
- Authority
- SG
- Singapore
- Prior art keywords
- overlay
- scatterometry
- imaging
- hybrid
- based overlay
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762521782P | 2017-06-19 | 2017-06-19 | |
US15/995,731 US11112369B2 (en) | 2017-06-19 | 2018-06-01 | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
PCT/US2018/037430 WO2018236653A1 (en) | 2017-06-19 | 2018-06-14 | HYBRID RECOVERY TARGET DESIGN FOR IMAGING-BASED RECOVERY AND DIFFUSIOMETRY-BASED RECOVERY |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201911992TA true SG11201911992TA (en) | 2020-01-30 |
Family
ID=64657997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201911992TA SG11201911992TA (en) | 2017-06-19 | 2018-06-14 | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
Country Status (8)
Country | Link |
---|---|
US (1) | US11112369B2 (ja) |
EP (1) | EP3635488A4 (ja) |
JP (1) | JP7018970B2 (ja) |
KR (1) | KR102353260B1 (ja) |
CN (1) | CN110770654B (ja) |
SG (1) | SG11201911992TA (ja) |
TW (1) | TWI752237B (ja) |
WO (1) | WO2018236653A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10795268B2 (en) * | 2017-09-29 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for measuring overlay errors using overlay measurement patterns |
US11809090B2 (en) | 2020-01-30 | 2023-11-07 | Kla Corporation | Composite overlay metrology target |
US11726410B2 (en) * | 2021-04-20 | 2023-08-15 | Kla Corporation | Multi-resolution overlay metrology targets |
US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
US11720031B2 (en) | 2021-06-28 | 2023-08-08 | Kla Corporation | Overlay design for electron beam and scatterometry overlay measurements |
US11703767B2 (en) | 2021-06-28 | 2023-07-18 | Kla Corporation | Overlay mark design for electron beam overlay |
US20230175835A1 (en) * | 2021-12-02 | 2023-06-08 | Micron Technology, Inc. | Apparatuses and methods for diffraction base overlay measurements |
US11796925B2 (en) * | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
US20240110780A1 (en) * | 2022-09-30 | 2024-04-04 | Kla Corporation | Mosaic overlay targets |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
JP2002231616A (ja) | 2001-02-05 | 2002-08-16 | Nikon Corp | 位置計測装置及び方法、露光装置及び方法、並びにデバイス製造方法 |
US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
US7193715B2 (en) * | 2002-11-14 | 2007-03-20 | Tokyo Electron Limited | Measurement of overlay using diffraction gratings when overlay exceeds the grating period |
US7230703B2 (en) * | 2003-07-17 | 2007-06-12 | Tokyo Electron Limited | Apparatus and method for measuring overlay by diffraction gratings |
US7065737B2 (en) | 2004-03-01 | 2006-06-20 | Advanced Micro Devices, Inc | Multi-layer overlay measurement and correction technique for IC manufacturing |
US20060109463A1 (en) | 2004-11-22 | 2006-05-25 | Asml Netherlands B.V. | Latent overlay metrology |
NL2003588A (en) * | 2008-12-15 | 2010-06-16 | Asml Holding Nv | Reticle inspection systems and method. |
US8214771B2 (en) | 2009-01-08 | 2012-07-03 | Kla-Tencor Corporation | Scatterometry metrology target design optimization |
JP6045588B2 (ja) | 2011-08-23 | 2016-12-14 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジ方法及び装置並びにデバイス製造方法 |
US10107621B2 (en) * | 2012-02-15 | 2018-10-23 | Nanometrics Incorporated | Image based overlay measurement with finite gratings |
US9007585B2 (en) * | 2012-03-07 | 2015-04-14 | Kla-Tencor Corporation | Imaging overlay metrology target and complimentary overlay metrology measurement system |
US8913237B2 (en) | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
US9093458B2 (en) * | 2012-09-06 | 2015-07-28 | Kla-Tencor Corporation | Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets |
WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
US9029810B2 (en) | 2013-05-29 | 2015-05-12 | Kla-Tencor Corporation | Using wafer geometry to improve scanner correction effectiveness for overlay control |
WO2014194095A1 (en) | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Combined imaging and scatterometry metrology |
TWI621190B (zh) * | 2013-06-19 | 2018-04-11 | 克萊譚克公司 | 併合成像及散射測量靶 |
WO2015009739A1 (en) * | 2013-07-18 | 2015-01-22 | Kla-Tencor Corporation | Illumination configurations for scatterometry measurements |
KR101890783B1 (ko) | 2013-11-26 | 2018-08-22 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 계측을 위한 방법, 장치 및 기판 |
KR101898087B1 (ko) | 2013-12-30 | 2018-09-12 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 타겟의 디자인을 위한 장치 및 방법 |
US9784690B2 (en) * | 2014-05-12 | 2017-10-10 | Kla-Tencor Corporation | Apparatus, techniques, and target designs for measuring semiconductor parameters |
CN107924132B (zh) * | 2014-08-28 | 2021-02-12 | Asml荷兰有限公司 | 检查设备、检查方法和制造方法 |
US10210606B2 (en) * | 2014-10-14 | 2019-02-19 | Kla-Tencor Corporation | Signal response metrology for image based and scatterometry overlay measurements |
JP6770958B2 (ja) | 2014-11-25 | 2020-10-21 | ケーエルエー コーポレイション | ランドスケープの解析および利用 |
KR20170096004A (ko) | 2014-12-17 | 2017-08-23 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 디바이스 토포그래피 유도 위상을 이용하는 장치 및 방법 |
US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
-
2018
- 2018-06-01 US US15/995,731 patent/US11112369B2/en active Active
- 2018-06-14 JP JP2019570044A patent/JP7018970B2/ja active Active
- 2018-06-14 EP EP18819930.1A patent/EP3635488A4/en active Pending
- 2018-06-14 WO PCT/US2018/037430 patent/WO2018236653A1/en unknown
- 2018-06-14 SG SG11201911992TA patent/SG11201911992TA/en unknown
- 2018-06-14 KR KR1020207001707A patent/KR102353260B1/ko active IP Right Grant
- 2018-06-14 CN CN201880040658.1A patent/CN110770654B/zh active Active
- 2018-06-15 TW TW107120671A patent/TWI752237B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2018236653A1 (en) | 2018-12-27 |
JP7018970B2 (ja) | 2022-02-14 |
US20180364179A1 (en) | 2018-12-20 |
TW201905586A (zh) | 2019-02-01 |
KR20200010585A (ko) | 2020-01-30 |
JP2020524276A (ja) | 2020-08-13 |
KR102353260B1 (ko) | 2022-01-18 |
EP3635488A1 (en) | 2020-04-15 |
CN110770654A (zh) | 2020-02-07 |
US11112369B2 (en) | 2021-09-07 |
CN110770654B (zh) | 2022-11-18 |
EP3635488A4 (en) | 2021-04-28 |
TWI752237B (zh) | 2022-01-11 |
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