SG11201907981YA - Substrate processing device, heater unit, and semiconductor device manufacturing method - Google Patents

Substrate processing device, heater unit, and semiconductor device manufacturing method

Info

Publication number
SG11201907981YA
SG11201907981YA SG11201907981YA SG11201907981YA SG11201907981YA SG 11201907981Y A SG11201907981Y A SG 11201907981YA SG 11201907981Y A SG11201907981Y A SG 11201907981YA SG 11201907981Y A SG11201907981Y A SG 11201907981YA SG 11201907981Y A SG11201907981Y A SG 11201907981YA
Authority
SG
Singapore
Prior art keywords
reaction tube
substrate processing
processing device
furnace opening
heater unit
Prior art date
Application number
SG11201907981YA
Other languages
English (en)
Inventor
Hidehiro Yanai
Tetsuaki Inada
Hideto Tateno
Yuya Miyanishi
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG11201907981YA publication Critical patent/SG11201907981YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
SG11201907981YA 2017-03-29 2017-03-29 Substrate processing device, heater unit, and semiconductor device manufacturing method SG11201907981YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/012974 WO2018179157A1 (ja) 2017-03-29 2017-03-29 基板処理装置、ヒータユニットおよび半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11201907981YA true SG11201907981YA (en) 2019-09-27

Family

ID=63677636

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907981YA SG11201907981YA (en) 2017-03-29 2017-03-29 Substrate processing device, heater unit, and semiconductor device manufacturing method

Country Status (4)

Country Link
JP (1) JP6730513B2 (ja)
CN (1) CN110419095A (ja)
SG (1) SG11201907981YA (ja)
WO (1) WO2018179157A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7281519B2 (ja) 2021-09-24 2023-05-25 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法および処理容器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05144746A (ja) * 1991-11-20 1993-06-11 Nec Corp 減圧ｃｖｄ装置
JP4893045B2 (ja) * 2006-03-22 2012-03-07 富士通セミコンダクター株式会社 薄膜製造方法及び薄膜製造装置
JP5139734B2 (ja) * 2007-06-25 2013-02-06 株式会社日立国際電気 基板処理装置及びこれに用いられる加熱装置
JP5043776B2 (ja) * 2008-08-08 2012-10-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP2011023514A (ja) * 2009-07-15 2011-02-03 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP6068633B2 (ja) * 2013-05-31 2017-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び炉口蓋体

Also Published As

Publication number Publication date
CN110419095A (zh) 2019-11-05
JP6730513B2 (ja) 2020-07-29
JPWO2018179157A1 (ja) 2019-11-07
WO2018179157A1 (ja) 2018-10-04

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