SG11201907078XA - Lasers or leds based on nanowires grown on graphene type substrates - Google Patents

Lasers or leds based on nanowires grown on graphene type substrates

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Publication number
SG11201907078XA
SG11201907078XA SG11201907078XA SG11201907078XA SG11201907078XA SG 11201907078X A SG11201907078X A SG 11201907078XA SG 11201907078X A SG11201907078X A SG 11201907078XA SG 11201907078X A SG11201907078X A SG 11201907078XA SG 11201907078X A SG11201907078X A SG 11201907078XA
Authority
SG
Singapore
Prior art keywords
lasers
leds based
type substrates
nanowires grown
graphene type
Prior art date
Application number
SG11201907078XA
Inventor
Bjorn Ove Myking Fimland
Helge Weman
Dingding Ren
Original Assignee
Norwegian Univ Sci & Tech Ntnu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norwegian Univ Sci & Tech Ntnu filed Critical Norwegian Univ Sci & Tech Ntnu
Publication of SG11201907078XA publication Critical patent/SG11201907078XA/en

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    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01L21/02444—Carbon, e.g. diamond-like carbon
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SG11201907078XA 2017-02-03 2018-02-05 Lasers or leds based on nanowires grown on graphene type substrates SG11201907078XA (en)

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GBGB1701829.2A GB201701829D0 (en) 2017-02-03 2017-02-03 Device
PCT/EP2018/052836 WO2018141974A1 (en) 2017-02-03 2018-02-05 Lasers or leds based on nanowires grown on graphene type substrates

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EP (1) EP3577730B1 (en)
JP (1) JP7229164B2 (en)
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AU (1) AU2018215248A1 (en)
BR (1) BR112019015807A2 (en)
CA (1) CA3051303A1 (en)
GB (1) GB201701829D0 (en)
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GB201913701D0 (en) * 2019-09-23 2019-11-06 Crayonano As Composition of matter
WO2021076786A1 (en) * 2019-10-15 2021-04-22 The Regents Of The University Of Michigan Nanocrystal surface-emitting lasers
JP7392426B2 (en) * 2019-11-28 2023-12-06 セイコーエプソン株式会社 Light emitting devices and projectors
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