SG11201907049YA - Process for treatment with a beam of ions in order to produce a scratch-resistant high-transmittance antireflective sapphire - Google Patents

Process for treatment with a beam of ions in order to produce a scratch-resistant high-transmittance antireflective sapphire

Info

Publication number
SG11201907049YA
SG11201907049YA SG11201907049YA SG11201907049YA SG11201907049YA SG 11201907049Y A SG11201907049Y A SG 11201907049YA SG 11201907049Y A SG11201907049Y A SG 11201907049YA SG 11201907049Y A SG11201907049Y A SG 11201907049YA SG 11201907049Y A SG11201907049Y A SG 11201907049YA
Authority
SG
Singapore
Prior art keywords
ions
sapphire
treatment
expressed
scratch
Prior art date
Application number
SG11201907049YA
Inventor
Denis Busardo
Frédéric Guernalec
Original Assignee
Ionics France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ionics France filed Critical Ionics France
Publication of SG11201907049YA publication Critical patent/SG11201907049YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

Abstract

PROCESS FOR TREATMENT WITH A BEAM OF IONS IN ORDER TO PRODUCE A SCRATCH-RESISTANT HIGH-TRANSMITTANCE ANTIREFLECTIVE SAPPHIRE Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: - the voltage for acceleration of the ions is between 10 kV and 100 kV; - the implanted dose, expressed in ions/cm 2, is between (5 x 10 16 ) x (M/14) -1/2 and 10 17 x (M/14) -1/2 , where M is the atomic mass of the ion; - the rate of displacement V D, expressed in cm/s, is between 0.025 x (P/D) and 0.1 x (P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained. [Figure 1]
SG11201907049YA 2017-02-14 2018-02-12 Process for treatment with a beam of ions in order to produce a scratch-resistant high-transmittance antireflective sapphire SG11201907049YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1770134A FR3062855B1 (en) 2017-02-14 2017-02-14 METHOD OF TREATING WITH A BEAM OF IONS TO PRODUCE A HIGH SCRATCH RESISTANT HIGH SCRATCH ANTIREFLECTION SAPHIR.
PCT/FR2018/050332 WO2018150130A1 (en) 2017-02-14 2018-02-12 Ion beam treatment process for producing a scratch-resistant high-transmittance antireflective sapphire

Publications (1)

Publication Number Publication Date
SG11201907049YA true SG11201907049YA (en) 2019-08-27

Family

ID=59325555

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907049YA SG11201907049YA (en) 2017-02-14 2018-02-12 Process for treatment with a beam of ions in order to produce a scratch-resistant high-transmittance antireflective sapphire

Country Status (7)

Country Link
US (1) US10923310B2 (en)
EP (1) EP3583241B1 (en)
CN (1) CN110431250B (en)
FR (1) FR3062855B1 (en)
SG (1) SG11201907049YA (en)
TW (1) TWI764987B (en)
WO (1) WO2018150130A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015176850A1 (en) * 2014-05-23 2015-11-26 Quertech Single- and/or multi-charged gas ion beam treatment method for producing an anti-glare sapphire material
CN111180302A (en) * 2020-01-03 2020-05-19 中国科学院上海光学精密机械研究所 Method for adjusting optical performance of optical element through ion implantation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060796A1 (en) * 2004-09-03 2006-03-23 Subramanian Krupakar M Method and apparatus for plasma source ion implantation in metals and non-metals
SG178061A1 (en) * 2009-08-25 2012-03-29 Semiconductor Energy Lab Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate
US9416442B2 (en) * 2013-03-02 2016-08-16 Apple Inc. Sapphire property modification through ion implantation
FR3003857B1 (en) * 2013-03-28 2015-04-03 Quertech METHOD FOR TREATING AN ION BEAM TO PRODUCE SUPERHYDROPHILIC GLASS MATERIALS
CN103334088B (en) * 2013-07-17 2016-02-24 辽宁太阳能研究应用有限公司 The method of low temperature depositing InN film on a glass substrate
FR3027120B1 (en) * 2014-10-09 2016-12-23 Quertech HIGH-TRANSACTION CAPACITIVE TOUCH SLAB IN VISIBLE AND UNAVAILABLE FIELD
WO2015176850A1 (en) * 2014-05-23 2015-11-26 Quertech Single- and/or multi-charged gas ion beam treatment method for producing an anti-glare sapphire material
US10703674B2 (en) * 2014-10-24 2020-07-07 Agc Glass Europe Ion implantation process and ion implanted glass substrates

Also Published As

Publication number Publication date
EP3583241B1 (en) 2020-12-23
TWI764987B (en) 2022-05-21
CN110431250A (en) 2019-11-08
EP3583241A1 (en) 2019-12-25
WO2018150130A1 (en) 2018-08-23
TW201829815A (en) 2018-08-16
US20200043694A1 (en) 2020-02-06
FR3062855B1 (en) 2019-04-19
FR3062855A1 (en) 2018-08-17
CN110431250B (en) 2021-11-12
US10923310B2 (en) 2021-02-16

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