SG11201907014WA - Method for anti-reflective and scratch-resistant treatment of synthetic sapphire - Google Patents

Method for anti-reflective and scratch-resistant treatment of synthetic sapphire

Info

Publication number
SG11201907014WA
SG11201907014WA SG11201907014WA SG11201907014WA SG11201907014WA SG 11201907014W A SG11201907014W A SG 11201907014WA SG 11201907014W A SG11201907014W A SG 11201907014WA SG 11201907014W A SG11201907014W A SG 11201907014WA SG 11201907014W A SG11201907014W A SG 11201907014WA
Authority
SG
Singapore
Prior art keywords
scratch
synthetic sapphire
resistant treatment
reflective
antireflection
Prior art date
Application number
SG11201907014WA
Inventor
Denis Busardo
Frédéric Guernalec
Original Assignee
Ionics France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ionics France filed Critical Ionics France
Publication of SG11201907014WA publication Critical patent/SG11201907014WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

METHOD OF ANTIREFLECTION AND SCRATCH-RESISTANT TREATMENT IN A SYNTHETIC SAPPHIRE Method of antireflection and scratch-resistant treatment of a synthetic sapphire material where: - the acceleration voltage of the ions is between 5 kV and 1000 kV and is chosen in order to create an implanted layer having a thickness equal to a multiple of 100 nm; - the microwave-induced annealing temperatures in the implanted surface are between 800°C and 2000°C with annealing times of between 1 and 1000 seconds. Synthetic sapphire materials are thus advantageously obtained where the reflection on the treated face is reduced by at least half while maintaining a hardness of greater than or equal to 8. Figure 1.b
SG11201907014WA 2017-02-03 2018-02-02 Method for anti-reflective and scratch-resistant treatment of synthetic sapphire SG11201907014WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1770113A FR3062658B1 (en) 2017-02-03 2017-02-03 METHOD FOR ANTIREFLECTIVE AND SCRATCH RESISTANT TREATMENT IN SYNTHETIC SAPPHIRE
PCT/FR2018/050253 WO2018142083A1 (en) 2017-02-03 2018-02-02 Method for anti-reflective and scratch-resistant treatment of synthetic sapphire

Publications (1)

Publication Number Publication Date
SG11201907014WA true SG11201907014WA (en) 2019-08-27

Family

ID=58993142

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907014WA SG11201907014WA (en) 2017-02-03 2018-02-02 Method for anti-reflective and scratch-resistant treatment of synthetic sapphire

Country Status (7)

Country Link
US (1) US20190352770A1 (en)
EP (1) EP3577250B1 (en)
CN (1) CN110392745A (en)
FR (1) FR3062658B1 (en)
SG (1) SG11201907014WA (en)
TW (1) TW201829861A (en)
WO (1) WO2018142083A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3146086B1 (en) * 2014-05-23 2019-10-02 Quertech Single- and/or multi-charged gas ion beam treatment method for producing an anti-glare sapphire material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2513659A1 (en) 1981-09-29 1983-04-01 Centre Nat Rech Scient MICROWAVE ENERGY SURFACE RECLAIMING METHOD PULSED OF SEMICONDUCTOR MATERIALS
US6225745B1 (en) * 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
KR100505040B1 (en) * 2003-12-19 2005-07-29 삼성전자주식회사 Ion source and ion implanter having the same
CN102066624B (en) * 2008-06-12 2013-03-13 韩国原子力研究院 Method for manufacturing the color controlled sappire
CN104321670B (en) * 2012-05-15 2016-01-06 Hoya株式会社 Optical element
US8852695B2 (en) * 2012-09-10 2014-10-07 The Research Foundation For The State University Of New York Optical barriers, waveguides, and methods for fabricating barriers and waveguides for use in harsh environments
KR101641807B1 (en) * 2013-02-12 2016-07-21 애플 인크. Multi-step ion implantation
FR3002240B1 (en) * 2013-02-15 2015-07-10 Quertech Ingenierie METHOD FOR TREATING AN ION BEAM TO PRODUCE SUSTAINABLE GLAND-FREE GLASS MATERIALS

Also Published As

Publication number Publication date
FR3062658A1 (en) 2018-08-10
TW201829861A (en) 2018-08-16
FR3062658B1 (en) 2022-06-24
WO2018142083A1 (en) 2018-08-09
CN110392745A (en) 2019-10-29
US20190352770A1 (en) 2019-11-21
EP3577250B1 (en) 2023-08-09
EP3577250A1 (en) 2019-12-11

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