SG11201903853TA - Thermally conductive paste and electronic device - Google Patents

Thermally conductive paste and electronic device

Info

Publication number
SG11201903853TA
SG11201903853TA SG11201903853TA SG11201903853TA SG11201903853TA SG 11201903853T A SG11201903853T A SG 11201903853TA SG 11201903853T A SG11201903853T A SG 11201903853TA SG 11201903853T A SG11201903853T A SG 11201903853TA SG 11201903853T A SG11201903853T A SG 11201903853TA
Authority
SG
Singapore
Prior art keywords
thermally conductive
conductive paste
electronic device
referred
conductive filler
Prior art date
Application number
SG11201903853TA
Inventor
Koji Makihara
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of SG11201903853TA publication Critical patent/SG11201903853TA/en

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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
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    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
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    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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    • C08K3/28—Nitrogen-containing compounds
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    • C08K5/00—Use of organic ingredients
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    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
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    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/181—Encapsulation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Die Bonding (AREA)
  • Conductive Materials (AREA)

Abstract

A thermally conductive paste of the present invention includes a thermosetting resin and a thermally conductive filler, a ratio of a wet spreading area is 90% or more, and when an average particle size D50 of the thermally conductive filler is referred to as D, a 5 viscosity of the thermally conductive paste excluding the thermally conductive filler at room temperature 25°C is referred to as η, and a degree of sedimentation of the thermally conductive filler in the thermally conductive paste is referred to as S = D2/η, S is 8 [10-12·m3·s/kg] or more and 900 [10-12·m3·s/kg] or less. 10 FIG. 1 accompanies abstract
SG11201903853TA 2016-10-31 2017-10-24 Thermally conductive paste and electronic device SG11201903853TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016213664 2016-10-31
PCT/JP2017/038315 WO2018079534A1 (en) 2016-10-31 2017-10-24 Thermally conductive paste and electronic device

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SG11201903853TA true SG11201903853TA (en) 2019-05-30

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KR (2) KR102214138B1 (en)
CN (1) CN110024092B (en)
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CN109181316B (en) * 2018-08-31 2021-03-02 清华大学深圳研究生院 Heat-conducting composite material and preparation method thereof
JP7466951B2 (en) * 2019-08-19 2024-04-15 エルジー・ケム・リミテッド Resin composition
CN117321757B (en) * 2021-05-14 2024-09-17 住友电木株式会社 Silver-containing paste

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JP2001181482A (en) * 1999-12-27 2001-07-03 Hitachi Chem Co Ltd Resin paste composition and semi-conductor device using the same
JP2004140170A (en) 2002-10-17 2004-05-13 Hitachi Chem Co Ltd Thermally conductive film for bonding, and semiconductor device using same
JP4962156B2 (en) * 2007-06-19 2012-06-27 住友金属鉱山株式会社 Conductive adhesive
JP2009120826A (en) * 2007-10-23 2009-06-04 Hitachi Chem Co Ltd Adhesive composition and semiconductor device
JP5120032B2 (en) * 2008-04-03 2013-01-16 株式会社デンソー Electronic equipment
US8421247B2 (en) * 2008-04-30 2013-04-16 Hitachi Chemical Company, Ltd. Connecting material having metallic particles of an oxygen state ratio and size and semiconductor device having the connecting material
JP2011086669A (en) * 2009-10-13 2011-04-28 Asahi Kasei E-Materials Corp Die bonding paste and semiconductor device using the same
CN102918115A (en) * 2010-06-17 2013-02-06 日立化成工业株式会社 Resin paste composition
JP5146567B2 (en) * 2011-05-30 2013-02-20 東洋インキＳｃホールディングス株式会社 Conductive ink, laminate with conductive pattern and method for producing the same
WO2014136773A1 (en) * 2013-03-06 2014-09-12 Dic株式会社 Epoxy resin composition, cured product, heat radiating material, and electronic member
WO2015122115A1 (en) * 2014-02-12 2015-08-20 昭和電工株式会社 Production method for semiconductor packages
SG11201705967TA (en) * 2015-01-29 2017-08-30 Sumitomo Bakelite Co Paste-like adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for bonding heatsink

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TW201833201A (en) 2018-09-16
KR102214138B1 (en) 2021-02-09
KR20200015845A (en) 2020-02-12
JPWO2018079534A1 (en) 2018-10-25
WO2018079534A1 (en) 2018-05-03
US20190264070A1 (en) 2019-08-29
CN110024092A (en) 2019-07-16
TWI670306B (en) 2019-09-01
JP6455630B2 (en) 2019-01-23
KR102076547B1 (en) 2020-02-13
CN110024092B (en) 2020-07-07

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