SG11201810798PA - Resin composition, and sheet, laminate, power semiconductor device, and plasma processing apparatus including the same, and method of producing semiconductor using the same - Google Patents
Resin composition, and sheet, laminate, power semiconductor device, and plasma processing apparatus including the same, and method of producing semiconductor using the sameInfo
- Publication number
- SG11201810798PA SG11201810798PA SG11201810798PA SG11201810798PA SG11201810798PA SG 11201810798P A SG11201810798P A SG 11201810798PA SG 11201810798P A SG11201810798P A SG 11201810798PA SG 11201810798P A SG11201810798P A SG 11201810798PA SG 11201810798P A SG11201810798P A SG 11201810798PA
- Authority
- SG
- Singapore
- Prior art keywords
- same
- laminate
- sheet
- processing apparatus
- resin composition
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000011342 resin composition Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/26—Di-epoxy compounds heterocyclic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
- C08G59/306—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3236—Heterocylic compounds
- C08G59/3245—Heterocylic compounds containing only nitrogen as a heteroatom
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
- C08G59/3281—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/045—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016155236 | 2016-08-08 | ||
PCT/JP2017/025885 WO2018030079A1 (en) | 2016-08-08 | 2017-07-18 | Resin composition, sheet obtained therefrom, laminate, power semiconductor device, plasma processing apparatus, and process for producing semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201810798PA true SG11201810798PA (en) | 2018-12-28 |
Family
ID=61162061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201810798PA SG11201810798PA (en) | 2016-08-08 | 2017-07-18 | Resin composition, and sheet, laminate, power semiconductor device, and plasma processing apparatus including the same, and method of producing semiconductor using the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US10793718B2 (en) |
EP (1) | EP3498776B1 (en) |
JP (1) | JP6947032B2 (en) |
KR (1) | KR102287542B1 (en) |
CN (1) | CN109563343B (en) |
SG (1) | SG11201810798PA (en) |
TW (1) | TWI733865B (en) |
WO (1) | WO2018030079A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6562147B2 (en) * | 2018-02-05 | 2019-08-21 | 三菱マテリアル株式会社 | Insulating film, insulated conductor, metal base substrate |
CN112602189A (en) * | 2018-08-23 | 2021-04-02 | 昭和电工材料株式会社 | Method for manufacturing semiconductor device, thermally conductive sheet, and method for manufacturing thermally conductive sheet |
CN112602190A (en) * | 2018-08-23 | 2021-04-02 | 昭和电工材料株式会社 | Method for manufacturing semiconductor device and heat conductive sheet |
WO2020077333A1 (en) * | 2018-10-12 | 2020-04-16 | Ppg Industries Ohio, Inc. | Compositions containing thermally conductive fillers |
JP7215164B2 (en) * | 2018-12-28 | 2023-01-31 | 東洋インキScホールディングス株式会社 | Thermally conductive insulating adhesive sheet and method for manufacturing same |
CN111057270B (en) * | 2019-12-04 | 2021-08-31 | 广东盈骅新材料科技有限公司 | Modified carbon black and preparation method thereof, resin composition and copper-clad plate |
US20230018491A1 (en) * | 2019-12-09 | 2023-01-19 | Sumitomo Bakelite Co., Ltd. | Thermosetting resin composition, resin sheet, and metal base substrate |
JP2021091784A (en) * | 2019-12-10 | 2021-06-17 | 東レ株式会社 | Composition, multilayer sheet, heat dissipation component, and electronic component |
CN114517074A (en) * | 2021-12-31 | 2022-05-20 | 广东全宝科技股份有限公司 | Polyimide resin composition and preparation method and application thereof |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2716611B2 (en) | 1991-10-29 | 1998-02-18 | 住友ベークライト株式会社 | High thermal conductive film adhesive that can be thermocompressed |
JP2004319823A (en) | 2003-04-17 | 2004-11-11 | Sumitomo Bakelite Co Ltd | Adhesive film for semiconductor, semiconductor device and method for manufacturing the same |
JP4695606B2 (en) * | 2007-01-09 | 2011-06-08 | 東京エレクトロン株式会社 | Method for improving heat conduction of focus ring in substrate mounting apparatus |
JP5038007B2 (en) | 2007-04-17 | 2012-10-03 | 電気化学工業株式会社 | Composition, metal-based circuit board using the composition |
KR101184527B1 (en) | 2007-06-06 | 2012-09-19 | 히다치 가세고교 가부시끼가이샤 | Photosensitive adhesive composition, film-like adhesive, adhesive sheet, method for forming adhesive pattern, semiconductor wafer with adhesive layer, semiconductor device and method for manufacturing semiconductor device |
JP4771100B2 (en) * | 2008-08-27 | 2011-09-14 | 信越化学工業株式会社 | Solvent-free polyimide silicone resin composition and cured product thereof |
JP5562574B2 (en) | 2009-04-14 | 2014-07-30 | 信越化学工業株式会社 | Thermally conductive adhesive |
US20120196075A1 (en) * | 2009-10-15 | 2012-08-02 | Toyosei Takahashi | Resin composition, semiconductor wafer bonding product and semiconductor device |
JP2011137085A (en) * | 2009-12-28 | 2011-07-14 | Sekisui Chem Co Ltd | Resin composition |
JP5422413B2 (en) | 2010-01-25 | 2014-02-19 | 電気化学工業株式会社 | Heat dissipation member and manufacturing method thereof |
JP2011157447A (en) * | 2010-01-29 | 2011-08-18 | Sekisui Chem Co Ltd | Resin composition |
KR101957532B1 (en) * | 2010-12-01 | 2019-03-12 | 도레이 카부시키가이샤 | Adhesive composition, adhesive sheet, and semiconductor device using the adhesive composition or the adhesive sheet |
JP5541613B2 (en) * | 2011-06-08 | 2014-07-09 | 信越化学工業株式会社 | Thermally conductive adhesive composition, adhesive sheet, and thermally conductive dicing die attach film |
JP5650084B2 (en) | 2011-06-22 | 2015-01-07 | 新日鉄住金化学株式会社 | Thermally conductive substrate and thermally conductive polyimide film |
WO2014115637A1 (en) * | 2013-01-22 | 2014-07-31 | 東レ株式会社 | Adhesive composition and adhesive sheet, and cured material and semiconductor device using same |
JP6221252B2 (en) | 2013-02-21 | 2017-11-01 | 東レ株式会社 | Polyimide resin, resin composition containing the same, laminated film and laminate using the same |
JP2015048400A (en) * | 2013-08-30 | 2015-03-16 | 学校法人 関西大学 | Epoxy resin, epoxy resin composition and method for producing epoxy resin |
JP6342263B2 (en) * | 2014-08-27 | 2018-06-13 | 住友電工プリントサーキット株式会社 | Coverlay, flexible printed wiring board and LED module |
JP6487829B2 (en) | 2015-11-20 | 2019-03-20 | 株式会社巴川製紙所 | Thermally conductive thermosetting adhesive composition and thermally conductive thermosetting adhesive sheet |
-
2017
- 2017-07-18 US US16/315,486 patent/US10793718B2/en active Active
- 2017-07-18 SG SG11201810798PA patent/SG11201810798PA/en unknown
- 2017-07-18 JP JP2017547010A patent/JP6947032B2/en active Active
- 2017-07-18 KR KR1020187037124A patent/KR102287542B1/en active IP Right Grant
- 2017-07-18 EP EP17839152.0A patent/EP3498776B1/en active Active
- 2017-07-18 CN CN201780048049.6A patent/CN109563343B/en active Active
- 2017-07-18 WO PCT/JP2017/025885 patent/WO2018030079A1/en unknown
- 2017-07-26 TW TW106125013A patent/TWI733865B/en active
Also Published As
Publication number | Publication date |
---|---|
EP3498776A1 (en) | 2019-06-19 |
US20190345332A1 (en) | 2019-11-14 |
EP3498776A4 (en) | 2020-04-22 |
KR20190040138A (en) | 2019-04-17 |
WO2018030079A1 (en) | 2018-02-15 |
EP3498776B1 (en) | 2023-03-08 |
CN109563343A (en) | 2019-04-02 |
JP6947032B2 (en) | 2021-10-13 |
TW201819535A (en) | 2018-06-01 |
TWI733865B (en) | 2021-07-21 |
CN109563343B (en) | 2021-03-23 |
US10793718B2 (en) | 2020-10-06 |
JPWO2018030079A1 (en) | 2019-06-06 |
KR102287542B1 (en) | 2021-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201810798PA (en) | Resin composition, and sheet, laminate, power semiconductor device, and plasma processing apparatus including the same, and method of producing semiconductor using the same | |
EP3463085A4 (en) | Electronic apparatus and operating method thereof | |
EP3345215A4 (en) | Semiconductor apparatus and method of manufacturing the same | |
EP3525892A4 (en) | Methods and apparatus for generating energy using fall protection devices | |
EP3190781A4 (en) | Autofocus method, device and electronic apparatus | |
SG11201802510SA (en) | Laminate film for temporary bonding, methods for producing substrate workpiece and laminate substrate workpiece using the laminate film for temporary bonding, and method for producing semiconductor device using the same | |
EP3505653A4 (en) | Roll-to-roll surface treatment device, and film forming method and film forming device using same | |
EP3430811A4 (en) | Electronic apparatus and method of operating the same | |
EP3539113A4 (en) | Electronic apparatus and method of operating the same | |
EP3107307A4 (en) | Vibroacoustic apparatus, vibroacoustic output method and vibroacoustic program | |
PT3339023T (en) | Laminate, method for manufacturing the laminate, semiconductor device, and method for manufacturing the semiconductor device | |
EP3500072A4 (en) | Plasma generation device and plasma irradiation method | |
EP3206223A4 (en) | Plasma processing method and plasma processing apparatus | |
EP3133878A4 (en) | Power adjustment apparatus and method | |
EP3501177A4 (en) | Electronic apparatus and method of operating the same | |
EP3342533A4 (en) | Combined processing apparatus and combined processing method | |
EP3321406A4 (en) | Device for producing sheet, process for producing sheet, resin particles, and sheet | |
EP3417366A4 (en) | Electronic apparatus and operating method thereof | |
GB2547487B (en) | Apparatus and method for generating electrical energy | |
EP3499763A4 (en) | Synchronous processing method, apparatus and device | |
EP3403286A4 (en) | Power generator, manufacturing method, and electronic device | |
EP3522633A4 (en) | Power distribution method and apparatus | |
EP3227624A4 (en) | Combined energy dissipation apparatus and method | |
EP3454626A4 (en) | Heat-generating device and method for producing same | |
EP3281694A4 (en) | Plasma irradiation apparatus and plasma irradiation method |