SG11201807466PA - Negative type photosensitive composition curable at low temperature - Google Patents
Negative type photosensitive composition curable at low temperatureInfo
- Publication number
- SG11201807466PA SG11201807466PA SG11201807466PA SG11201807466PA SG11201807466PA SG 11201807466P A SG11201807466P A SG 11201807466PA SG 11201807466P A SG11201807466P A SG 11201807466PA SG 11201807466P A SG11201807466P A SG 11201807466PA SG 11201807466P A SG11201807466P A SG 11201807466PA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- shi
- photosensitive composition
- negative type
- go3f
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
- C08F230/085—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon the monomer being a polymerisable silane, e.g. (meth)acryloyloxy trialkoxy silanes or vinyl trialkoxysilanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Silicon Polymers (AREA)
Abstract
INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 1111111101111011101010111110101111101110111111111110111101101111101111011111 International Bureau 0.. .1 j ..... ..or::,„, (10) International Publication Number (43) International Publication Date WO 2017/167690 Al 5 October 2017 (05.10.2017) IN I PO I P CT (51) International Patent Classification: (74) Agent: B2B PATENTS; c/o Merck Patent GmbH, 64271 GO3F 7/075 (2006.01) G03F 7/039 (2006.01) Darmstadt (DE). GO3F 7/40 (2006.01) GO3F 7/038 (2006.01) (81) Designated States (unless otherwise indicated, for every (21) International Application Number: kind of national protection available): AE, AG, AL, AM, PCT/EP2017/057195 AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (22) International Filing Date: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, 27 March 2017 (27.03.2017) HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (25) Filing Language: English KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, (26) Publication Language: English NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (30) Priority Data: RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, 2016-069100 30 March 2016 (30.03.2016) JP TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (71) Applicant: AZ ELECTRONIC MATERIALS (LUX- EMBOURG) S.A.R.L. [LU/LU]; 46 Place Guillaume II, (84) Designated States (unless otherwise indicated, for every 1648 Luxembourg (LU). kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, (72) Inventors: MISUMI, Motoki; 1039-1-405, Kawai, Fukur- TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, oi-shi, Shizuoka, 437-0064 (JP). YOKOYAMA, Daishi; TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, c/o Merck Performance Materials Ltd., 3330, Chihama, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, Kakegawa-shi, Shizuoka, 437-1412 (JP). TANIGUCHI, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Katsuto; c/o Merck Performance Materials Ltd., 3330, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Chihama, Kakegawa-shi, Shizuoka, 437-1412 (JP). KUZ- GW, KM, ML, MR, NE, SN, TD, TG). AWA, Masahiro; c/o Natoco Co., Ltd., 8-3 Futano-cho, Published: Mizuho-ku, Nagoya-shi, Aichi, 467-0861 (JP). — international 21(3)) with search report (Art. 1-1 © C:r IN (54) Title: NEGATIVE TYPE PHOTOSENSITIVE COMPOSITION CURABLE AT LOW TEMPERATURE 1-1 ---.. (57) : [] To provide a negative type photosensitive composition developable with a low concentration alkali de - IN veloper and capable of forming a cured film excellent in transparency, in chemical resistance and in environmental durability; and C further to provide a pattern-formation method employing the composition. [Means] The present invention provides a negative type N photosensitive composition comprising : (I) an alkali-soluble resin, namely, a polymer comprising a carboxyl-containing polymeriza- O tion unit and an alkoxysilyl-containing polymerization unit, (II) a polysiloxane, (III) a compound having two or more (meth)ac - ryloyloxy groups, (IV) (i) a silicone derivative having a particular structure and/or (ii) a compound having two or more epoxy groups, (V) a polymerization initiator, and (VI) a solvent.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016069100A JP2017181798A (en) | 2016-03-30 | 2016-03-30 | Low temperature curable negative type photosensitive composition |
PCT/EP2017/057195 WO2017167690A1 (en) | 2016-03-30 | 2017-03-27 | Negative type photosensitive composition curable at low temperature |
Publications (1)
Publication Number | Publication Date |
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SG11201807466PA true SG11201807466PA (en) | 2018-10-30 |
Family
ID=58448520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201807466PA SG11201807466PA (en) | 2016-03-30 | 2017-03-27 | Negative type photosensitive composition curable at low temperature |
Country Status (7)
Country | Link |
---|---|
US (1) | US11506978B2 (en) |
JP (2) | JP2017181798A (en) |
KR (1) | KR102377105B1 (en) |
CN (1) | CN109073974B (en) |
SG (1) | SG11201807466PA (en) |
TW (1) | TWI734763B (en) |
WO (1) | WO2017167690A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019095695A (en) * | 2017-11-27 | 2019-06-20 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Negative type photosensitive siloxane composition and methods for producing cured film and electronic device using the same |
JP2020084105A (en) * | 2018-11-29 | 2020-06-04 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Acrylic polymerized polysiloxane, composition comprising the same, and cured film produced using the same |
CN111443573B (en) * | 2019-01-16 | 2023-06-06 | 台湾永光化学工业股份有限公司 | Negative photosensitive resin composition and use thereof |
KR102671237B1 (en) * | 2019-03-22 | 2024-05-30 | 동우 화인켐 주식회사 | Negative-type Photosensitive Resin Composition |
CN110673443B (en) * | 2019-09-04 | 2022-09-02 | 深圳市邦得凌触控显示技术有限公司 | Low-temperature curing type OC negative photoresist, insulating bridge and protective layer and OLED device |
WO2021120106A1 (en) * | 2019-12-19 | 2021-06-24 | Showa Denko Materials Co., Ltd. | Alkali-soluble resin, photosensitive resin composition, photosensitive element, method of forming resist pattern, and method of forming wiring pattern |
CN111025847B (en) * | 2019-12-31 | 2023-07-14 | 阜阳欣奕华材料科技有限公司 | Photosensitive resin composition, black matrix and display device |
JP2023519345A (en) * | 2020-03-27 | 2023-05-10 | イルミナ インコーポレイテッド | Imprint device |
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JPH0791509B2 (en) * | 1985-12-17 | 1995-10-04 | 住友化学工業株式会社 | Insulating film forming coating solution for semiconductors |
JP2933879B2 (en) | 1995-08-11 | 1999-08-16 | シャープ株式会社 | Transmissive liquid crystal display device and method of manufacturing the same |
US20040235992A1 (en) | 2001-05-30 | 2004-11-25 | Koji Okada | Photosensitive resin composition and photosensitive dry film resist and photosensitive coverlay film produced therefrom |
KR20060097132A (en) * | 2003-11-21 | 2006-09-13 | 세키스이가가쿠 고교가부시키가이샤 | Positive photoresist and method for producing structure |
WO2010090406A2 (en) | 2009-02-04 | 2010-08-12 | 동우화인켐 주식회사 | Colored photosensitive resin composition, color filter, and liquid crystal display device comprising same |
JP2013135084A (en) * | 2011-12-26 | 2013-07-08 | Nitto Denko Corp | Light-emitting diode device manufacturing method |
JP5327345B2 (en) | 2012-02-23 | 2013-10-30 | 東レ株式会社 | Negative photosensitive resin composition, cured film, and touch panel member. |
KR102137626B1 (en) * | 2012-12-28 | 2020-07-24 | 오사카 유키가가쿠고교 가부시키가이샤 | Adhesion-improving agent and silane compound |
US9651865B2 (en) * | 2013-02-14 | 2017-05-16 | Toray Industries, Inc. | Negative-type photosensitive coloring composition, cured film, light-shielding pattern for touch panel, and touch panel manufacturing method |
JP2014174374A (en) * | 2013-03-11 | 2014-09-22 | Natoko Kk | Photosensitive resin composition and cured product of the same |
JP6048670B2 (en) * | 2013-03-27 | 2016-12-21 | Jsr株式会社 | Radiation sensitive resin composition |
TWI489212B (en) * | 2013-03-29 | 2015-06-21 | Chi Mei Corp | Photosensitive resin composition and its application |
CN104238271B (en) * | 2013-06-14 | 2020-01-03 | Az电子材料(卢森堡)有限公司 | Negative photosensitive composition capable of low-temperature curing |
JP6466087B2 (en) | 2013-06-14 | 2019-02-06 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | Negative photosensitive composition that can be cured at low temperature |
KR102082722B1 (en) * | 2013-07-25 | 2020-02-28 | 도레이 카부시키가이샤 | Negative-type photosensitive white composition for touch panel, touch panel, and production method for touch panel |
TWI541610B (en) * | 2013-07-25 | 2016-07-11 | Chi Mei Corp | Photosensitive polysiloxane compositions and their use |
TWI484296B (en) * | 2013-12-03 | 2015-05-11 | Chi Mei Corp | Photosensitive resin composition, color filter and method for manufacturing the same, liquid crystal display apparatus |
US9857685B2 (en) * | 2014-06-13 | 2018-01-02 | Nippon Kayaku Kabushiki Kaisha | Photosensitive resin composition, resist laminate, cured product of photosensitive resin composition, and cured product of resist laminate (11) |
TWI524150B (en) * | 2014-06-27 | 2016-03-01 | 奇美實業股份有限公司 | Photosensitive resin composition, protective film and element having the same |
-
2016
- 2016-03-30 JP JP2016069100A patent/JP2017181798A/en active Pending
-
2017
- 2017-03-27 SG SG11201807466PA patent/SG11201807466PA/en unknown
- 2017-03-27 CN CN201780020386.4A patent/CN109073974B/en active Active
- 2017-03-27 US US16/089,021 patent/US11506978B2/en active Active
- 2017-03-27 KR KR1020187031548A patent/KR102377105B1/en active IP Right Grant
- 2017-03-27 WO PCT/EP2017/057195 patent/WO2017167690A1/en active Application Filing
- 2017-03-27 JP JP2018545485A patent/JP6914955B2/en active Active
- 2017-03-29 TW TW106110428A patent/TWI734763B/en active
Also Published As
Publication number | Publication date |
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TW201805722A (en) | 2018-02-16 |
US11506978B2 (en) | 2022-11-22 |
JP2019511737A (en) | 2019-04-25 |
KR20180124138A (en) | 2018-11-20 |
TWI734763B (en) | 2021-08-01 |
KR102377105B1 (en) | 2022-03-23 |
CN109073974B (en) | 2023-09-01 |
CN109073974A (en) | 2018-12-21 |
WO2017167690A1 (en) | 2017-10-05 |
US20200301277A1 (en) | 2020-09-24 |
JP6914955B2 (en) | 2021-08-04 |
JP2017181798A (en) | 2017-10-05 |
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