SG11201807344RA - Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor–on–insulator type - Google Patents
Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor–on–insulator typeInfo
- Publication number
- SG11201807344RA SG11201807344RA SG11201807344RA SG11201807344RA SG11201807344RA SG 11201807344R A SG11201807344R A SG 11201807344RA SG 11201807344R A SG11201807344R A SG 11201807344RA SG 11201807344R A SG11201807344R A SG 11201807344RA SG 11201807344R A SG11201807344R A SG 11201807344RA
- Authority
- SG
- Singapore
- Prior art keywords
- donor substrate
- substrate
- determining
- implanting energy
- receiver
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 15
- 238000000034 method Methods 0.000 title abstract 5
- 239000012212 insulator Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Recrystallisation Techniques (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
OF THE DISCLOSURE METHOD FOR DETERMINING A SUITABLE IMPLANTING ENERGY IN A DONOR SUBSTRATE AND PROCESS FOR FABRICATING A STRUCTURE OF SEMICONDUCTOR –ON –INSULATOR TYPE 5 The invention concerns a method for determining a suitable implanting energy of at least two atomic species in a donor substrate (30) to create a weakened zone (31) defining a monocrystalline semiconductor layer (32) to be transferred onto a receiver substrate (10), comprising the following steps: 10 (i) forming a dielectric layer on at least one of the donor substrate (30) and the receiver substrate (10); (ii) co –implanting said species in the donor substrate (30); (iii) bonding the donor substrate (30) on the receiver substrate (10); (iv) detaching the donor substrate (30) along the weakened zone (31) to 15 transfer the monocrystalline semiconductor layer (32) and recover the remainder (34) of the donor substrate; (v) inspecting the peripheral crown of the remainder (34) of the donor substrate, or of the receiver substrate (10) on which the monocrystalline semiconductor layer (32) was transferred at step (iv); 20 (vi) if said crown exhibits zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is too high; (vii) if said crown does not exhibit zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is suitable. 25 Fig. 5
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1651747A FR3048548B1 (en) | 2016-03-02 | 2016-03-02 | METHOD FOR DETERMINING APPROPRIATE ENERGY FOR IMPLANTATION IN DONOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR TYPE STRUCTURE ON INSULATION |
PCT/FR2017/050471 WO2017149253A1 (en) | 2016-03-02 | 2017-03-02 | Method for determining a suitable energy for implantation in a donor substrate and process for fabricating a semiconductor-on-insulator structure |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201807344RA true SG11201807344RA (en) | 2018-09-27 |
Family
ID=56322049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201807344RA SG11201807344RA (en) | 2016-03-02 | 2017-03-02 | Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor–on–insulator type |
Country Status (7)
Country | Link |
---|---|
US (1) | US10777447B2 (en) |
JP (1) | JP6965260B2 (en) |
CN (1) | CN108701627B (en) |
FR (1) | FR3048548B1 (en) |
SG (1) | SG11201807344RA (en) |
TW (1) | TWI724114B (en) |
WO (1) | WO2017149253A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016081367A1 (en) | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION |
CN108780776B (en) | 2015-11-20 | 2023-09-29 | 环球晶圆股份有限公司 | Manufacturing method for flattening semiconductor surface |
FR3063176A1 (en) * | 2017-02-17 | 2018-08-24 | Soitec | MASKING A ZONE AT THE EDGE OF A DONOR SUBSTRATE DURING AN ION IMPLANTATION STEP |
SG11202011553SA (en) | 2018-06-08 | 2020-12-30 | Globalwafers Co Ltd | Method for transfer of a thin layer of silicon |
FR3091620B1 (en) * | 2019-01-07 | 2021-01-29 | Commissariat Energie Atomique | Layer transfer method with localized reduction of an ability to initiate a fracture |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4304879B2 (en) * | 2001-04-06 | 2009-07-29 | 信越半導体株式会社 | Method for determining the implantation amount of hydrogen ions or rare gas ions |
FR2835097B1 (en) * | 2002-01-23 | 2005-10-14 | OPTIMIZED METHOD FOR DEFERRING A THIN LAYER OF SILICON CARBIDE ON A RECEPTACLE SUBSTRATE | |
EP2091075A2 (en) * | 2002-12-06 | 2009-08-19 | S.O.I.TEC Silicon on Insulator Technologies S.A. | A method for recycling a surface of a substrate using local thinning |
JP4492054B2 (en) * | 2003-08-28 | 2010-06-30 | 株式会社Sumco | Reclaimed wafer reclaim processing method and reclaimed wafer |
CN101027768B (en) * | 2004-09-21 | 2010-11-03 | S.O.I.Tec绝缘体上硅技术公司 | Thin layer transfer method wherein a co-implantation step is performed according to conditions avoiding blisters formation and limiting roughness |
FR2880988B1 (en) * | 2005-01-19 | 2007-03-30 | Soitec Silicon On Insulator | TREATMENT OF A LAYER IN SI1-yGEy TAKEN |
EP1777735A3 (en) * | 2005-10-18 | 2009-08-19 | S.O.I.Tec Silicon on Insulator Technologies | Recycling process of an epitaxial donor wafer |
US20070148917A1 (en) * | 2005-12-22 | 2007-06-28 | Sumco Corporation | Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer |
US7575988B2 (en) * | 2006-07-11 | 2009-08-18 | S.O.I.Tec Silicon On Insulator Technologies | Method of fabricating a hybrid substrate |
JP5155536B2 (en) * | 2006-07-28 | 2013-03-06 | 一般財団法人電力中央研究所 | Method for improving the quality of SiC crystal and method for manufacturing SiC semiconductor device |
EP2015354A1 (en) * | 2007-07-11 | 2009-01-14 | S.O.I.Tec Silicon on Insulator Technologies | Method for recycling a substrate, laminated wafer fabricating method and suitable recycled donor substrate |
FR2920912B1 (en) * | 2007-09-12 | 2010-08-27 | S O I Tec Silicon On Insulator Tech | METHOD FOR MANUFACTURING A LAYER TRANSFER STRUCTURE |
FR2926672B1 (en) * | 2008-01-21 | 2010-03-26 | Soitec Silicon On Insulator | PROCESS FOR MANUFACTURING LAYERS OF EPITAXY MATERIAL |
FR2971365B1 (en) * | 2011-02-08 | 2013-02-22 | Soitec Silicon On Insulator | METHOD FOR RECYCLING A SOURCE SUBSTRATE |
-
2016
- 2016-03-02 FR FR1651747A patent/FR3048548B1/en active Active
-
2017
- 2017-03-02 CN CN201780014686.1A patent/CN108701627B/en active Active
- 2017-03-02 WO PCT/FR2017/050471 patent/WO2017149253A1/en active Application Filing
- 2017-03-02 TW TW106106821A patent/TWI724114B/en active
- 2017-03-02 JP JP2018545988A patent/JP6965260B2/en active Active
- 2017-03-02 US US16/081,816 patent/US10777447B2/en active Active
- 2017-03-02 SG SG11201807344RA patent/SG11201807344RA/en unknown
Also Published As
Publication number | Publication date |
---|---|
US10777447B2 (en) | 2020-09-15 |
CN108701627A (en) | 2018-10-23 |
JP6965260B2 (en) | 2021-11-10 |
WO2017149253A1 (en) | 2017-09-08 |
TWI724114B (en) | 2021-04-11 |
JP2019511112A (en) | 2019-04-18 |
FR3048548B1 (en) | 2018-03-02 |
FR3048548A1 (en) | 2017-09-08 |
US20190074215A1 (en) | 2019-03-07 |
TW201735124A (en) | 2017-10-01 |
CN108701627B (en) | 2023-08-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201807344RA (en) | Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor–on–insulator type | |
MY176320A (en) | Wafer thinning method | |
EP4250337A3 (en) | Method for separating semiconductor substrate body from functional layer thereon | |
GB2541146A (en) | Method of manufacturing a germanium-on-insulator substrate | |
MY180538A (en) | Wafer producing method | |
SG10201801132VA (en) | Method to create air gaps | |
TW201614840A (en) | Semiconductor device and method for fabricating the same | |
MY181950A (en) | Wafer processing method | |
MY177495A (en) | Wafer thinning method | |
MY190040A (en) | Wafer producing method | |
PH12014502088A1 (en) | Solar cell having an emitter region with wide bandgap semiconductor material | |
TW201714253A (en) | Method of making embedded memory device with silicon-on-insulator substrate | |
MY174610A (en) | Process for preparing a surface-modified material | |
ATE521085T1 (en) | METHOD FOR MAKING A SEMICONDUCTOR-ON-INSULATION HETEROSTRUCTURE | |
MY190939A (en) | Solar cells with tunnel dielectrics | |
TW201614838A (en) | Semiconductor device and methods for forming the same | |
SG11201811126SA (en) | Quartz glass crucible, manufacturing method thereof, and manufacturing method of silicon single crystal using quartz glass crucible | |
MY187031A (en) | Sic wafer producing method | |
FR2967813B1 (en) | METHOD FOR PRODUCING A BENTALLIC METAL LAYER STRUCTURE | |
TW200639969A (en) | Treatmeny of a removed layer of Si1-yGey | |
WO2018231337A3 (en) | Process integration approach of selective tungsten via fill | |
WO2015126575A3 (en) | Silicon carbide semiconductor device, and methods for manufacturing thereof | |
EP3666937C0 (en) | High-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, and manufacturing method therefor | |
WO2015038367A3 (en) | Forming through wafer vias in glass | |
WO2016094328A3 (en) | Laser stop layer for foil-based metallization of solar cells |