SG11201805242QA - Silicon Wafer with Homogeneous Radial Oxygen Variation - Google Patents

Silicon Wafer with Homogeneous Radial Oxygen Variation

Info

Publication number
SG11201805242QA
SG11201805242QA SG11201805242QA SG11201805242QA SG11201805242QA SG 11201805242Q A SG11201805242Q A SG 11201805242QA SG 11201805242Q A SG11201805242Q A SG 11201805242QA SG 11201805242Q A SG11201805242Q A SG 11201805242QA SG 11201805242Q A SG11201805242Q A SG 11201805242QA
Authority
SG
Singapore
Prior art keywords
silicon wafer
homogeneous radial
variation
radial oxygen
oxygen variation
Prior art date
Application number
SG11201805242QA
Inventor
Karl Mangelberger
Walter Heuwieser
Michael Skrobanek
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201805242QA publication Critical patent/SG11201805242QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers

Abstract

Silicon Wafer with Homogeneous Radial Oxygen Variation 5 The invention relates to a silicon wafer having a radial variation of the oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. Drawing for the abstract: Fig. 1
SG11201805242QA 2015-12-22 2016-12-07 Silicon Wafer with Homogeneous Radial Oxygen Variation SG11201805242QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015226399.1A DE102015226399A1 (en) 2015-12-22 2015-12-22 Silicon wafer with homogeneous radial oxygen variation
PCT/EP2016/080080 WO2017108406A1 (en) 2015-12-22 2016-12-07 Silicon wafer having a homogeneous radial oxygen variation

Publications (1)

Publication Number Publication Date
SG11201805242QA true SG11201805242QA (en) 2018-07-30

Family

ID=57544409

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201805242QA SG11201805242QA (en) 2015-12-22 2016-12-07 Silicon Wafer with Homogeneous Radial Oxygen Variation

Country Status (9)

Country Link
US (1) US10731271B2 (en)
EP (1) EP3394325B1 (en)
JP (1) JP6724142B2 (en)
KR (1) KR102089886B1 (en)
CN (1) CN108474137B (en)
DE (1) DE102015226399A1 (en)
SG (1) SG11201805242QA (en)
TW (1) TWI639736B (en)
WO (1) WO2017108406A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6680108B2 (en) 2016-06-28 2020-04-15 株式会社Sumco Method for producing silicon single crystal
DE102017213587A1 (en) * 2017-08-04 2019-02-07 Siltronic Ag Single crystal silicon wafer and method for producing the semiconductor wafer
JP6885301B2 (en) * 2017-11-07 2021-06-09 株式会社Sumco Single crystal manufacturing method and equipment
CN111615569A (en) * 2017-11-29 2020-09-01 胜高股份有限公司 Silicon single crystal, method for producing same, and silicon wafer
WO2020076448A1 (en) * 2018-10-12 2020-04-16 Globalwafers Co., Ltd. Dopant concentration control in silicon melt to enhance the ingot quality
CN109778307B (en) * 2019-02-15 2021-02-12 江苏大学 Process control system suitable for monocrystalline silicon horizontal growth mechanism
JP7249913B2 (en) * 2019-08-28 2023-03-31 グローバルウェーハズ・ジャパン株式会社 Manufacturing method of silicon single crystal
EP3929335A1 (en) * 2020-06-25 2021-12-29 Siltronic AG Semiconductor wafer made of single-crystal silicon and process for the production thereof
CN115233293A (en) * 2022-07-25 2022-10-25 北京麦竹吉科技有限公司 Lightly doped P-type silicon single crystal and preparation method thereof

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JPH0431386A (en) 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd Pulling up semiconductor single crystal
JP2546736B2 (en) * 1990-06-21 1996-10-23 信越半導体株式会社 Silicon single crystal pulling method
JPH07291783A (en) * 1994-04-21 1995-11-07 Sumitomo Metal Ind Ltd Silicon single crystal and production thereof
JPH07291782A (en) 1994-04-22 1995-11-07 Japan Energy Corp Method for growing compound semiconductor single crystal
DE69806137T2 (en) 1997-04-09 2002-11-21 Memc Electronic Materials SILICON WITH LOW DEFECT DENSITY
JPH1179889A (en) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd Production of and production unit for silicon single crystal with few crystal defect, and silicon single crystal and silicon wafer produced thereby
JPH11268987A (en) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd Silicon single crystal and its production
JP3783495B2 (en) * 1999-11-30 2006-06-07 株式会社Ｓｕｍｃｏ Manufacturing method of high quality silicon single crystal
DE10014650A1 (en) 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Silicon semiconductor wafer used as a substrate wafer is doped with specified concentration of hydrogen
JP4615161B2 (en) 2001-08-23 2011-01-19 信越半導体株式会社 Epitaxial wafer manufacturing method
US7229495B2 (en) * 2002-12-23 2007-06-12 Siltron Inc. Silicon wafer and method for producing silicon single crystal
DE10339792B4 (en) * 2003-03-27 2014-02-27 Siltronic Ag Method and apparatus for producing a single crystal of silicon
KR100588425B1 (en) * 2003-03-27 2006-06-12 실트로닉 아게 Method for the Production of a Silicon Single Crystal, Silicon Single Crystal and Silicon Semiconductor Wafers with determined Defect Distributions
JP4670224B2 (en) 2003-04-01 2011-04-13 株式会社Ｓｕｍｃｏ Silicon wafer manufacturing method
JP5034247B2 (en) * 2006-02-01 2012-09-26 株式会社Ｓｕｍｃｏ Method for producing silicon single crystal
JP4760729B2 (en) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Silicon single crystal wafer for IGBT and manufacturing method of silicon single crystal wafer for IGBT
JP5072460B2 (en) * 2006-09-20 2012-11-14 ジルトロニック アクチエンゲゼルシャフト Silicon wafer for semiconductor and manufacturing method thereof
SG142208A1 (en) * 2006-10-18 2008-05-28 Siltronic Ag Process for producing p»-doped and epitaxially coated semiconductor wafers from silicon
KR100906284B1 (en) * 2007-11-02 2009-07-06 주식회사 실트론 Semiconductor single crystal growth method improved in oxygen concentration characteristics
JP2010100474A (en) * 2008-10-23 2010-05-06 Covalent Materials Corp Method for optimizing horizontal magnetic field in pulling-up silicon single crystal, and method for manufacturing silicon single crystal
DE102010005100B4 (en) 2010-01-20 2016-07-14 Siltronic Ag Process for the production of semiconductor wafers of silicon with a diameter of at least 450 mm
DE102012214085B4 (en) * 2012-08-08 2016-07-07 Siltronic Ag Single crystal silicon wafer and process for its production

Also Published As

Publication number Publication date
TW201723242A (en) 2017-07-01
JP2019505467A (en) 2019-02-28
TWI639736B (en) 2018-11-01
US20200149184A1 (en) 2020-05-14
EP3394325A1 (en) 2018-10-31
KR20180094102A (en) 2018-08-22
US10731271B2 (en) 2020-08-04
CN108474137B (en) 2021-02-26
CN108474137A (en) 2018-08-31
JP6724142B2 (en) 2020-07-15
EP3394325B1 (en) 2020-06-24
WO2017108406A1 (en) 2017-06-29
DE102015226399A1 (en) 2017-06-22
KR102089886B1 (en) 2020-03-17

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