SG11201709810VA - Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device - Google Patents
Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage deviceInfo
- Publication number
- SG11201709810VA SG11201709810VA SG11201709810VA SG11201709810VA SG11201709810VA SG 11201709810V A SG11201709810V A SG 11201709810VA SG 11201709810V A SG11201709810V A SG 11201709810VA SG 11201709810V A SG11201709810V A SG 11201709810VA SG 11201709810V A SG11201709810V A SG 11201709810VA
- Authority
- SG
- Singapore
- Prior art keywords
- storage device
- nonvolatile semiconductor
- semiconductor storage
- memory cell
- manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015247812A JP5982055B1 (en) | 2015-12-18 | 2015-12-18 | MEMORY CELL, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE MANUFACTURING METHOD |
JP2016164002A JP6069569B1 (en) | 2016-08-24 | 2016-08-24 | Memory cell and nonvolatile semiconductor memory device |
PCT/JP2016/086355 WO2017104505A1 (en) | 2015-12-18 | 2016-12-07 | Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201709810VA true SG11201709810VA (en) | 2017-12-28 |
Family
ID=59056425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201709810VA SG11201709810VA (en) | 2015-12-18 | 2016-12-07 | Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device |
Country Status (8)
Country | Link |
---|---|
US (3) | US10373967B2 (en) |
EP (2) | EP4071787B1 (en) |
KR (1) | KR102488209B1 (en) |
CN (2) | CN113314537A (en) |
IL (1) | IL255886B (en) |
SG (1) | SG11201709810VA (en) |
TW (1) | TWI604596B (en) |
WO (1) | WO2017104505A1 (en) |
Families Citing this family (18)
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US9305929B1 (en) | 2015-02-17 | 2016-04-05 | Micron Technology, Inc. | Memory cells |
US10134982B2 (en) * | 2015-07-24 | 2018-11-20 | Micron Technology, Inc. | Array of cross point memory cells |
US10020304B2 (en) * | 2015-11-16 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor, semiconductor device and fabricating method thereof |
JP6778607B2 (en) * | 2016-12-22 | 2020-11-04 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor devices |
US10396145B2 (en) | 2017-01-12 | 2019-08-27 | Micron Technology, Inc. | Memory cells comprising ferroelectric material and including current leakage paths having different total resistances |
JP2019102560A (en) * | 2017-11-30 | 2019-06-24 | ルネサスエレクトロニクス株式会社 | Semiconductor device and method of manufacturing the same |
JP2021089905A (en) * | 2018-03-20 | 2021-06-10 | キオクシア株式会社 | Semiconductor storage device |
JP6998267B2 (en) * | 2018-05-08 | 2022-01-18 | ルネサスエレクトロニクス株式会社 | Semiconductor devices and their manufacturing methods |
US10797151B2 (en) * | 2018-09-27 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal gate structures for field effect transistors |
US10903326B2 (en) * | 2019-01-13 | 2021-01-26 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
JP2020145233A (en) * | 2019-03-04 | 2020-09-10 | キオクシア株式会社 | Semiconductor device and manufacturing method thereof |
US11158648B2 (en) * | 2019-03-14 | 2021-10-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double channel memory device |
US11170834B2 (en) * | 2019-07-10 | 2021-11-09 | Micron Technology, Inc. | Memory cells and methods of forming a capacitor including current leakage paths having different total resistances |
US11825645B2 (en) * | 2020-06-04 | 2023-11-21 | Etron Technology, Inc. | Memory cell structure |
TWI733626B (en) * | 2020-07-07 | 2021-07-11 | 旺宏電子股份有限公司 | Operation method for memory device |
TWI773482B (en) * | 2020-09-15 | 2022-08-01 | 力旺電子股份有限公司 | Memory structrue and operation method thereof |
TWI779613B (en) * | 2020-09-15 | 2022-10-01 | 日商鎧俠股份有限公司 | semiconductor memory device |
CN114446972A (en) * | 2020-10-30 | 2022-05-06 | 硅存储技术股份有限公司 | Split gate non-volatile memory cell, HV and logic device with finfet structure and method of fabricating the same |
Family Cites Families (28)
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JP4923318B2 (en) * | 1999-12-17 | 2012-04-25 | ソニー株式会社 | Nonvolatile semiconductor memory device and operation method thereof |
JP4770061B2 (en) * | 2001-05-31 | 2011-09-07 | ソニー株式会社 | Nonvolatile semiconductor memory device and manufacturing method thereof |
US20070075372A1 (en) | 2003-10-20 | 2007-04-05 | Nec Corporation | Semiconductor device and manufacturing process therefor |
US7423310B2 (en) * | 2004-09-29 | 2008-09-09 | Infineon Technologies Ag | Charge-trapping memory cell and charge-trapping memory device |
KR100630746B1 (en) * | 2005-05-06 | 2006-10-02 | 삼성전자주식회사 | Multi-bit and multi-level non-volatile memory device and methods of operating and fabricating the same |
KR100652433B1 (en) * | 2005-09-08 | 2006-12-01 | 삼성전자주식회사 | Non volatile memory device capable of multi-bit storage |
EP1932172A1 (en) * | 2005-09-28 | 2008-06-18 | Nxp B.V. | Double gate non-volatile memory device and method of manufacturing |
WO2007070808A2 (en) * | 2005-12-12 | 2007-06-21 | The Regents Of The University Of California | Multi-bit-per-cell nvm structures and architecture |
US7544980B2 (en) * | 2006-01-27 | 2009-06-09 | Freescale Semiconductor, Inc. | Split gate memory cell in a FinFET |
US7547941B2 (en) * | 2006-05-04 | 2009-06-16 | Elite Semiconductor Memory Technology, Inc. | NAND non-volatile two-bit memory and fabrication method |
US8772858B2 (en) * | 2006-10-11 | 2014-07-08 | Macronix International Co., Ltd. | Vertical channel memory and manufacturing method thereof and operating method using the same |
KR20080061764A (en) * | 2006-12-28 | 2008-07-03 | 삼성전자주식회사 | Nonvolatile memory device and method of fabricating the same |
JP2009032384A (en) * | 2007-06-29 | 2009-02-12 | Toshiba Corp | Semiconductor memory and driving method thereof |
JP5285947B2 (en) * | 2008-04-11 | 2013-09-11 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JP5135250B2 (en) | 2009-02-12 | 2013-02-06 | 株式会社東芝 | Manufacturing method of semiconductor device |
JP2010278314A (en) * | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | Semiconductor device and method of manufacturing the same |
JP2011129816A (en) | 2009-12-21 | 2011-06-30 | Renesas Electronics Corp | Semiconductor device |
US20110147848A1 (en) * | 2009-12-23 | 2011-06-23 | Kuhn Kelin J | Multiple transistor fin heights |
WO2011114503A1 (en) * | 2010-03-19 | 2011-09-22 | 株式会社 東芝 | Nonvolatile semiconductor storage device and method for producing same |
JP5538024B2 (en) * | 2010-03-29 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | Nonvolatile semiconductor memory device |
KR101110355B1 (en) * | 2010-04-05 | 2012-02-14 | 서울대학교산학협력단 | 3d stacked array having cut-off gate line and fabrication method thereof |
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KR101287364B1 (en) * | 2012-01-30 | 2013-07-19 | 서울대학교산학협력단 | Simplified nonvolatile memory cell string and nand flash memory array using the same |
US20130270638A1 (en) * | 2012-04-13 | 2013-10-17 | International Business Machines Corporation | Strained soi finfet on epitaxially grown box |
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JP6029989B2 (en) | 2013-01-25 | 2016-11-24 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
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2016
- 2016-12-07 EP EP22167295.9A patent/EP4071787B1/en active Active
- 2016-12-07 WO PCT/JP2016/086355 patent/WO2017104505A1/en active Application Filing
- 2016-12-07 KR KR1020177034422A patent/KR102488209B1/en active IP Right Grant
- 2016-12-07 US US15/578,413 patent/US10373967B2/en active Active
- 2016-12-07 EP EP16875485.1A patent/EP3293756B1/en active Active
- 2016-12-07 CN CN202110561992.5A patent/CN113314537A/en active Pending
- 2016-12-07 CN CN201680029797.5A patent/CN108541336B/en active Active
- 2016-12-07 SG SG11201709810VA patent/SG11201709810VA/en unknown
- 2016-12-15 TW TW105141571A patent/TWI604596B/en active
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2017
- 2017-11-23 IL IL255886A patent/IL255886B/en active IP Right Grant
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2019
- 2019-06-07 US US16/434,373 patent/US11011530B2/en active Active
-
2021
- 2021-04-16 US US17/232,824 patent/US20210257376A1/en active Pending
Also Published As
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US20180286875A1 (en) | 2018-10-04 |
WO2017104505A1 (en) | 2017-06-22 |
US11011530B2 (en) | 2021-05-18 |
EP4071787A1 (en) | 2022-10-12 |
KR20180096494A (en) | 2018-08-29 |
IL255886A (en) | 2018-01-31 |
TWI604596B (en) | 2017-11-01 |
KR102488209B1 (en) | 2023-01-16 |
EP3293756A1 (en) | 2018-03-14 |
EP4071787B1 (en) | 2023-09-27 |
US10373967B2 (en) | 2019-08-06 |
CN108541336B (en) | 2021-06-08 |
TW201729354A (en) | 2017-08-16 |
US20210257376A1 (en) | 2021-08-19 |
CN108541336A (en) | 2018-09-14 |
IL255886B (en) | 2021-05-31 |
US20190296030A1 (en) | 2019-09-26 |
CN113314537A (en) | 2021-08-27 |
EP3293756B1 (en) | 2022-04-27 |
EP3293756A4 (en) | 2019-08-14 |
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