SG11201706333SA - Process for filling etched holes - Google Patents

Process for filling etched holes

Info

Publication number
SG11201706333SA
SG11201706333SA SG11201706333SA SG11201706333SA SG11201706333SA SG 11201706333S A SG11201706333S A SG 11201706333SA SG 11201706333S A SG11201706333S A SG 11201706333SA SG 11201706333S A SG11201706333S A SG 11201706333SA SG 11201706333S A SG11201706333S A SG 11201706333SA
Authority
SG
Singapore
Prior art keywords
etched holes
filling etched
filling
holes
etched
Prior art date
Application number
SG11201706333SA
Inventor
Angus North
Ronan Padraig Sean O'reilly
Gregory Mcavoy
Original Assignee
Memjet Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memjet Technology Ltd filed Critical Memjet Technology Ltd
Publication of SG11201706333SA publication Critical patent/SG11201706333SA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611Processes for the planarisation of structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1601Production of bubble jet print heads
    • B41J2/1603Production of bubble jet print heads of the front shooter type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1628Manufacturing processes etching dry etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1631Manufacturing processes photolithography
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1637Manufacturing processes molding
    • B41J2/1639Manufacturing processes molding sacrificial molding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/164Manufacturing processes thin film formation
    • B41J2/1645Manufacturing processes thin film formation thin film formation by spincoating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00087Holes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/05Microfluidics
    • B81B2201/052Ink-jet print cartridges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/03Static structures
    • B81B2203/0353Holes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102Surface micromachining
    • B81C2201/0104Chemical-mechanical polishing [CMP]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118Processes for the planarization of structures
    • B81C2201/0121Processes for the planarization of structures involving addition of material followed by removal of parts of said material, i.e. subtractive planarization

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Micromachines (AREA)
SG11201706333SA 2015-02-17 2016-02-03 Process for filling etched holes SG11201706333SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562117385P 2015-02-17 2015-02-17
PCT/EP2016/052318 WO2016131657A1 (en) 2015-02-17 2016-02-03 Process for filling etched holes

Publications (1)

Publication Number Publication Date
SG11201706333SA true SG11201706333SA (en) 2017-09-28

Family

ID=55299481

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201706333SA SG11201706333SA (en) 2015-02-17 2016-02-03 Process for filling etched holes

Country Status (8)

Country Link
US (4) US9708183B2 (en)
EP (1) EP3259134B1 (en)
JP (1) JP6663439B2 (en)
CN (1) CN107249892B (en)
AU (1) AU2016221946B2 (en)
SG (1) SG11201706333SA (en)
TW (1) TWI687987B (en)
WO (1) WO2016131657A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018084827A1 (en) 2016-11-01 2018-05-11 Hewlett-Packard Development Company, L.P. Fluid ejection device
TW201924950A (en) 2017-11-27 2019-07-01 愛爾蘭商滿捷特科技公司 Process for forming inkjet nozzle chambers
US20210335607A1 (en) * 2020-04-22 2021-10-28 X-FAB Texas, Inc. Method for manufacturing a silicon carbide device

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US4836885A (en) * 1988-05-03 1989-06-06 International Business Machines Corporation Planarization process for wide trench isolation
US5175122A (en) * 1991-06-28 1992-12-29 Digital Equipment Corporation Planarization process for trench isolation in integrated circuit manufacture
DE4241045C1 (en) 1992-12-05 1994-05-26 Bosch Gmbh Robert Process for anisotropic etching of silicon
JP3079241B2 (en) * 1992-12-25 2000-08-21 富士通株式会社 Communication control device
US5516625A (en) * 1993-09-08 1996-05-14 Harris Corporation Fill and etchback process using dual photoresist sacrificial layer and two-step etching process for planarizing oxide-filled shallow trench structure
US5580826A (en) * 1993-11-17 1996-12-03 Nec Corporation Process for forming a planarized interlayer insulating film in a semiconductor device using a periodic resist pattern
US5435888A (en) * 1993-12-06 1995-07-25 Sgs-Thomson Microelectronics, Inc. Enhanced planarization technique for an integrated circuit
US5702976A (en) * 1995-10-24 1997-12-30 Micron Technology, Inc. Shallow trench isolation using low dielectric constant insulator
US5863828A (en) * 1996-09-25 1999-01-26 National Semiconductor Corporation Trench planarization technique
US6069069A (en) * 1996-12-16 2000-05-30 Chartered Semiconductor Manufacturing, Ltd. Method for planarizing a low dielectric constant spin-on polymer using nitride etch stop
US6015757A (en) * 1997-07-02 2000-01-18 Taiwan Semiconductor Manufacturing Co. Ltd. Method of oxide etching with high selectivity to silicon nitride by using polysilicon layer
US6114219A (en) * 1997-09-15 2000-09-05 Advanced Micro Devices, Inc. Method of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating material
US6194283B1 (en) * 1997-10-29 2001-02-27 Advanced Micro Devices, Inc. High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacers
US6114220A (en) * 1998-11-18 2000-09-05 United Microelectronics Corp. Method of fabricating a shallow trench isolation
AU5175500A (en) * 1999-06-01 2000-12-18 3M Innovative Properties Company Optically transmissive microembossed receptor media
US6531265B2 (en) * 2000-12-14 2003-03-11 International Business Machines Corporation Method to planarize semiconductor surface
KR100428805B1 (en) * 2001-08-09 2004-04-28 삼성전자주식회사 Structure of Trench Isolation and Method of Forming The Same
US6884729B2 (en) * 2002-02-11 2005-04-26 Cabot Microelectronics Corporation Global planarization method
US6774042B1 (en) * 2002-02-26 2004-08-10 Taiwan Semiconductor Manufacturing Company Planarization method for deep sub micron shallow trench isolation process
US6767833B2 (en) * 2002-07-02 2004-07-27 Taiwan Semiconductor Manufacturing Co., Ltd Method for damascene reworking
US6645851B1 (en) * 2002-09-17 2003-11-11 Taiwan Semiconductor Manufacturing Company Method of forming planarized coatings on contact hole patterns of various duty ratios
US6755509B2 (en) 2002-11-23 2004-06-29 Silverbrook Research Pty Ltd Thermal ink jet printhead with suspended beam heater
US7005236B2 (en) * 2003-04-23 2006-02-28 Taiwan Semiconductor Manufacturing Company Maintaining photoresist planarity at hole edges
US7441865B2 (en) 2004-01-21 2008-10-28 Silverbrook Research Pty Ltd Printhead chip having longitudinal ink supply channels
US7226873B2 (en) * 2004-11-22 2007-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of improving via filling uniformity in isolated and dense via-pattern regions
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US7445317B2 (en) * 2005-10-11 2008-11-04 Silverbrook Research Pty Ltd Inkjet printhead with droplet stem anchor
US8232176B2 (en) * 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
CN100459100C (en) * 2006-09-30 2009-02-04 中芯国际集成电路制造(上海)有限公司 Planarization method and method for forming isolation structure of top metal layer
US7541297B2 (en) * 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
WO2009089567A1 (en) 2008-01-16 2009-07-23 Silverbrook Research Pty Ltd Printhead cartridge with two fluid couplings
US7923379B2 (en) 2008-11-12 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-step process for forming high-aspect-ratio holes for MEMS devices
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Also Published As

Publication number Publication date
EP3259134A1 (en) 2017-12-27
US10822228B2 (en) 2020-11-03
US20190263657A1 (en) 2019-08-29
US20170349431A1 (en) 2017-12-07
TW201640575A (en) 2016-11-16
US20200180949A1 (en) 2020-06-11
TWI687987B (en) 2020-03-11
AU2016221946B2 (en) 2018-05-10
AU2016221946A1 (en) 2017-08-17
JP2018512289A (en) 2018-05-17
CN107249892A (en) 2017-10-13
US20160236930A1 (en) 2016-08-18
CN107249892B (en) 2019-04-26
EP3259134B1 (en) 2018-08-08
US9708183B2 (en) 2017-07-18
US10329146B2 (en) 2019-06-25
JP6663439B2 (en) 2020-03-11
WO2016131657A1 (en) 2016-08-25
US10597290B2 (en) 2020-03-24

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