SG11201703005WA - Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device - Google Patents

Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device

Info

Publication number
SG11201703005WA
SG11201703005WA SG11201703005WA SG11201703005WA SG11201703005WA SG 11201703005W A SG11201703005W A SG 11201703005WA SG 11201703005W A SG11201703005W A SG 11201703005WA SG 11201703005W A SG11201703005W A SG 11201703005WA SG 11201703005W A SG11201703005W A SG 11201703005WA
Authority
SG
Singapore
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
producing
circuit devices
Prior art date
Application number
SG11201703005WA
Inventor
Yasuhiro Taniguchi
Yasuhiko Kawashima
Hideo Kasai
Ryotaro Sakurai
Yutaka Shinagawa
Kosuke Okuyama
Original Assignee
Floadia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp filed Critical Floadia Corp
Publication of SG11201703005WA publication Critical patent/SG11201703005WA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG11201703005WA 2014-10-15 2015-10-06 Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device SG11201703005WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014211096 2014-10-15
PCT/JP2015/078334 WO2016060012A1 (en) 2014-10-15 2015-10-06 Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
SG11201703005WA true SG11201703005WA (en) 2017-05-30

Family

ID=55746559

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201703005WA SG11201703005WA (en) 2014-10-15 2015-10-06 Method for producing semiconductor integrated circuit devices, and semiconductor integrated circuit device

Country Status (8)

Country Link
EP (2) EP3208832B1 (en)
JP (1) JP5934452B1 (en)
KR (1) KR101851911B1 (en)
CN (1) CN107148668B (en)
IL (1) IL251712B (en)
SG (1) SG11201703005WA (en)
TW (1) TWI608565B (en)
WO (1) WO2016060012A1 (en)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4058232B2 (en) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ Semiconductor device and IC card
JP2005142354A (en) * 2003-11-06 2005-06-02 Matsushita Electric Ind Co Ltd Non-volatile semiconductor storage device, its driving method, and manufacturing method
KR20100080241A (en) * 2008-12-31 2010-07-08 주식회사 동부하이텍 Method for manufacturing flash memory device
KR20100080244A (en) * 2008-12-31 2010-07-08 주식회사 동부하이텍 Flash memory device and manufacturing method the same
KR20100080190A (en) * 2008-12-31 2010-07-08 주식회사 동부하이텍 Flash memory device and manufacturing method the same
KR20100080240A (en) * 2008-12-31 2010-07-08 주식회사 동부하이텍 Flash memory device and manufacturing method the same
JP5404149B2 (en) * 2009-04-16 2014-01-29 ルネサスエレクトロニクス株式会社 Semiconductor memory device
JP2010278314A (en) * 2009-05-29 2010-12-09 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
JP2011129816A (en) 2009-12-21 2011-06-30 Renesas Electronics Corp Semiconductor device
JP5538024B2 (en) * 2010-03-29 2014-07-02 ルネサスエレクトロニクス株式会社 Nonvolatile semiconductor memory device
KR101979299B1 (en) * 2012-12-26 2019-09-03 에스케이하이닉스 주식회사 Nonvolatile memory device and method of fabricating the same

Also Published As

Publication number Publication date
EP3208832A1 (en) 2017-08-23
CN107148668B (en) 2018-11-09
JP5934452B1 (en) 2016-06-15
TW201622068A (en) 2016-06-16
IL251712A0 (en) 2017-06-29
TWI608565B (en) 2017-12-11
IL251712B (en) 2019-03-31
JPWO2016060012A1 (en) 2017-04-27
EP3208832B1 (en) 2023-09-20
KR20170072245A (en) 2017-06-26
CN107148668A (en) 2017-09-08
WO2016060012A1 (en) 2016-04-21
EP3208832A4 (en) 2017-11-01
EP4235802A2 (en) 2023-08-30
EP4235802A3 (en) 2023-11-01
KR101851911B1 (en) 2018-04-24

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