SG11201702158SA - Supporting glass substrate and laminate using same - Google Patents

Supporting glass substrate and laminate using same

Info

Publication number
SG11201702158SA
SG11201702158SA SG11201702158SA SG11201702158SA SG11201702158SA SG 11201702158S A SG11201702158S A SG 11201702158SA SG 11201702158S A SG11201702158S A SG 11201702158SA SG 11201702158S A SG11201702158S A SG 11201702158SA SG 11201702158S A SG11201702158S A SG 11201702158SA
Authority
SG
Singapore
Prior art keywords
laminate
same
glass substrate
supporting glass
supporting
Prior art date
Application number
SG11201702158SA
Inventor
Hiroki Katayama
Original Assignee
Nippon Electric Glass Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co filed Critical Nippon Electric Glass Co
Publication of SG11201702158SA publication Critical patent/SG11201702158SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
    • C03B17/06—Forming glass sheets
    • C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/538—Roughness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates
SG11201702158SA 2014-09-25 2015-06-05 Supporting glass substrate and laminate using same SG11201702158SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014194598 2014-09-25
PCT/JP2015/066325 WO2016047210A1 (en) 2014-09-25 2015-06-05 Supporting glass substrate and laminate using same

Publications (1)

Publication Number Publication Date
SG11201702158SA true SG11201702158SA (en) 2017-04-27

Family

ID=55580751

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201702158SA SG11201702158SA (en) 2014-09-25 2015-06-05 Supporting glass substrate and laminate using same

Country Status (7)

Country Link
US (3) US20180226311A1 (en)
JP (1) JP6674147B2 (en)
KR (1) KR102270441B1 (en)
CN (2) CN116813198A (en)
SG (1) SG11201702158SA (en)
TW (1) TWI722998B (en)
WO (1) WO2016047210A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016087311A2 (en) * 2014-12-01 2016-06-09 Schott Ag Electrical storage system comprising a sheet-type discrete element, discrete sheet-type element, method for the production thereof and use thereof
JP6742593B2 (en) * 2015-01-05 2020-08-19 日本電気硝子株式会社 Method for manufacturing supporting glass substrate and method for manufacturing laminated body
CN107108344A (en) * 2015-03-10 2017-08-29 日本电气硝子株式会社 Semiconductor support glass substrate and use its multilayer board
US10429892B1 (en) * 2016-01-12 2019-10-01 Apple Inc. Electronic devices with thin display housings
TWI560123B (en) * 2016-06-02 2016-12-01 Chipmos Technologies Inc Disk-like semiconductor package structure and combination thereof with tray
KR102268543B1 (en) * 2016-08-03 2021-06-23 신에쓰 가가꾸 고교 가부시끼가이샤 Thermally Conductive Silicone Composition
CN206541281U (en) * 2016-10-12 2017-10-03 肖特玻璃科技(苏州)有限公司 A kind of electronic device structure and its ultra-thin glass plate used
DE102018209589B4 (en) * 2017-06-22 2023-05-04 Schott Ag Composite of a component, in particular an electronic component, and a glass or glass-ceramic material and method for its production
KR102407104B1 (en) * 2017-10-27 2022-06-10 쇼오트 아게 Apparatus and method for manufacturing flat glass
WO2023026770A1 (en) * 2021-08-24 2023-03-02 日本電気硝子株式会社 Support glass substrate, multi-layer body, method for producing multi-layer body, and method for producing semiconductor package

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141313A (en) * 2000-08-22 2002-05-17 Nikon Corp Cmp device and manufacturing method of semiconductor device
WO2002076675A1 (en) * 2001-03-27 2002-10-03 Nippon Sheet Glass Co., Ltd. Substrate for information recording medium and production method thereof, information recording medium, and glass blank sheet
JP4786899B2 (en) * 2004-12-20 2011-10-05 Ｈｏｙａ株式会社 Mask blank glass substrate manufacturing method, mask blank manufacturing method, reflective mask blank manufacturing method, exposure mask manufacturing method, reflective mask manufacturing method, and semiconductor device manufacturing method
US7662665B2 (en) * 2007-01-22 2010-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating a semiconductor package including stress relieving layer for flip chip packaging
JP5688203B2 (en) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor substrate
JP5327702B2 (en) * 2008-01-21 2013-10-30 日本電気硝子株式会社 Manufacturing method of glass substrate
US8535978B2 (en) * 2011-12-30 2013-09-17 Deca Technologies Inc. Die up fully molded fan-out wafer level packaging
JP5573422B2 (en) * 2010-06-29 2014-08-20 富士通株式会社 Manufacturing method of semiconductor device
US9227295B2 (en) * 2011-05-27 2016-01-05 Corning Incorporated Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer
KR101476520B1 (en) * 2011-09-30 2014-12-24 아반스트레이트 가부시키가이샤 Method for manufacturing glass substrate for flat panel display
JP5826000B2 (en) * 2011-11-30 2015-12-02 昭和電工株式会社 Substrate for magnetic recording medium, magnetic recording medium, method for manufacturing magnetic recording medium substrate, and surface inspection method
US9082764B2 (en) * 2012-03-05 2015-07-14 Corning Incorporated Three-dimensional integrated circuit which incorporates a glass interposer and method for fabricating the same
JP5574454B2 (en) * 2012-04-06 2014-08-20 ＡｖａｎＳｔｒａｔｅ株式会社 Manufacturing method of glass substrate
JP5399542B2 (en) * 2012-08-08 2014-01-29 富士通株式会社 Manufacturing method of semiconductor device
US8785299B2 (en) * 2012-11-30 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Package with a fan-out structure and method of forming the same
CN107074637A (en) * 2014-12-04 2017-08-18 日本电气硝子株式会社 Glass plate
JP6742593B2 (en) * 2015-01-05 2020-08-19 日本電気硝子株式会社 Method for manufacturing supporting glass substrate and method for manufacturing laminated body
JP6631935B2 (en) * 2015-01-05 2020-01-15 日本電気硝子株式会社 Manufacturing method of glass plate

Also Published As

Publication number Publication date
KR20170059964A (en) 2017-05-31
TW201613028A (en) 2016-04-01
CN116813198A (en) 2023-09-29
KR102270441B1 (en) 2021-06-29
JPWO2016047210A1 (en) 2017-07-06
US20210358822A1 (en) 2021-11-18
US20230352355A1 (en) 2023-11-02
US20180226311A1 (en) 2018-08-09
US11749574B2 (en) 2023-09-05
JP6674147B2 (en) 2020-04-01
CN106573833A (en) 2017-04-19
WO2016047210A1 (en) 2016-03-31
TWI722998B (en) 2021-04-01

Similar Documents

Publication Publication Date Title
ZA201604484B (en) Aerosol-forming substrate and aerosol-delivery system
ZA201604455B (en) Aerosol-forming substrate and aerosol-delivery system
ZA201604413B (en) Aerosol-forming substrate and aerosol-delivery system
EP3219687A4 (en) Laminate and laminated glass
EP3106443A4 (en) Laminated glass
SG11201700852UA (en) Infrared reflecting substrate
EP3228601A4 (en) Glass plate and heater using same
SG11201702158SA (en) Supporting glass substrate and laminate using same
HK1221076A1 (en) Modular socket panel and layer module for modular socket panel
ZA201608605B (en) Intermediate film for laminated glass, and laminated glass
EP3090310A4 (en) Thin-film devices and fabrication
SG11201606688RA (en) Magnetic-disk glass substrate
GB201610639D0 (en) Glass laminate structure
ZA201608606B (en) Intermediate film for laminated glass, and laminated glass
GB201701387D0 (en) Glass substrate pick up and place device
EP3181534A4 (en) Laminated glass
EP3238253A4 (en) Thin-film devices and fabrication
EP3168202A4 (en) Laminated glass
EP3202738A4 (en) Laminated glass intermediate film and laminated glass
EP3168725A4 (en) Touch substrate and display apparatus
GB201410317D0 (en) Substrate
EP3141533A4 (en) Glass article
EP3144286A4 (en) Laminated glass interlayer and laminated glass
EP3202732A4 (en) Laminated glass intermediate film and laminated glass
TWM489777U (en) Crystal glass pedestal structure